HS2DAF-T - HS2MAF-T
Taiwan Semiconductor
2A, 200V-1000V High Efficient Surface Mount Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low reverse leakage
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F
V
RRM
I
FSM
T
J MAX
Package
VALUE
2
200-1000
50
150
SMAF
UNIT
A
V
A
°C
APPLICATIONS
● Switch Mode Power Supply
● Inverters and Converters
● Free Wheeling diodes
MECHANICAL DATA
●
●
●
●
●
●
Case: SMAF
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1 whisker test
Polarity: Indicated by cathode band
Weight: 0.035 g (approximately)
SMAF
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
DC blocking voltage
Forward current
Surge peak forward
8.3 ms at T
A
= 25°C
current single half sine-
wave superimposed on 1.0 ms at T = 25°C
A
rated load
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F
I
FSM
130
T
J
T
STG
-55 to +150
-55 to +150
A
°C
°C
SYMBOL
HS2D
AF-T
200
140
200
HS2G
AF-T
400
280
400
HS2J
AF-T
600
420
600
2
50
HS2K
AF-T
800
560
800
HS2M
AF-T
1000
700
1000
UNIT
HS2DAF HS2GAF HS2JAF HS2KAF HS2MAF
V
V
V
A
A
1
Version:A1906
HS2DAF-T - HS2MAF-T
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
TYP
15
89
22
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
I
F
= 1A, T
J
= 25°C
HS2DAF-T
I
F
= 2A, T
J
= 25°C
I
F
= 1A, T
J
= 125°C
I
F
= 2A, T
J
= 125°C
I
F
= 1A, T
J
= 25°C
Forward voltage
(1)
SYMBOL
TYP
0.84
0.91
0.68
0.78
0.94
MAX
-
1.0
-
0.94
-
1.4
-
1.07
-
1.7
-
1.31
5
250
50
75
-
-
-
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
ns
ns
pF
pF
pF
HS2GAF-T
I
F
= 2A, T
J
= 25°C
I
F
= 1A, T
J
= 125°C
I
F
= 2A, T
J
= 125°C
I
F
= 1A, T
J
= 25°C
V
F
1.04
0.77
0.88
1.19
1.33
0.96
1.10
HS2JAF-T
HS2KAF-T
HS2MAF-T
I
F
= 2A, T
J
= 25°C
I
F
= 1A, T
J
= 125°C
I
F
= 2A, T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Reverse current @ rated V
R
(2)
I
R
-
-
-
HS2DAF-T
HS2GAF-T
Reverse recovery time
HS2JAF-T
HS2KAF-T
HS2MAF-T
HS2DAF-T
HS2GAF-T
HS2JAF-T
HS2KAF-T
HS2MAF-T
I
F
=0.5A,I
R
=1.0A,
Irr=0.25A
t
rr
-
27
Junction capacitance
1 MHz, V
R
=4.0V
C
J
21
12
Notes:
(1) Pulse test with PW=0.3 ms
(2) Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE
HS2XAF-T R3G
(1)
(1)
PACKAGE
SMAF
SMAF
SMAF
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
7,500 / 13" Paper reel
HS2XAF-T M2G
HS2XAF-T R2G
(1)
Notes:
(1) “X” defines voltage from 200V(HS2DAF-T) to 1000V(HS2MAF-T)
2
Version:A1906
HS2DAF-T - HS2MAF-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3
100.0
f=1.0MHz
Vsig=50mVp-p
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
CAPACITANCE (pF)
2
10.0
1
HS2DAF-T
HS2GAF-T
HS2JAF-T to HS2MAF-T
1.0
25
50
75
100
125
150
1
10
REVERSE VOLTAGE (V)
100
LEAD TEMPERATURE (
°
C)
0
Fig.3 Typical Reverse Characteristics
100
INSTANTANEOUS REVERSE CURRENT (μA)
Fig.4 Typical Forward Characteristics
10 10
HS2DAF-T
T
J
=150°C
INSTANTANEOUS FORWARD CURRENT (A)
HS2DAF-T
T
J
=150°C
10
1
0.1
T
J
=25°C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1
UF1DLW
T
J
=125°C
T
J
=125°C
T
J
=25°C
(A)
T
J
=125°C
1 0.1
T
J
=-55°C
T
J
=25°C
0.01
Pulse width 300μs
Pulse width
1% duty cycle
0.001
0.1
0.4 0.3
0.4
0.6
0.5 0.80.6
0.7
1
0.8 1.20.9
1
1.4
1.1
1.2
FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics
100
INSTANTANEOUS REVERSE CURRENT (μA)
Fig.6 Typical Forward Characteristics
10 10
INSTANTANEOUS FORWARD CURRENT (A)
HS2GAF-T
T
J
=150°C
HS2GAF-T
T
J
=150°C
10
1
1
UF1DLW
T
J
=125°C
J
=125°C
T
T
J
=125°C
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
T
J
=25°C
1 0.1
T
J
=-55°C
0.01
Pulse width 300μs
1% duty cycle
Pulse width
0.3
0.6
0.4
0.8
0.5
1
0.6
0.7
1.2
0.8
1.4
0.9
1.6
1
1.1
1.2
0.1
0.001
0.4
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:A1906
(A)
T
J
=25°C T =25°C
J
HS2DAF-T - HS2MAF-T
Taiwan Semiconductor
Fig.7 Typical Reverse Characteristics
100
INSTANTANEOUS REVERSE CURRENT (μA)
Fig.8 Typical Forward Characteristics
10 10
INSTANTANEOUS FORWARD CURRENT (A)
HS2JAF-T to HS2MAF-T
T
J
=150°C
HS2JAF-T to HS2MAF-T
T
J
=150°C
10
T
J
=125°C
1
UF1DLW
T
J
=125°C
T
J
=125°C
T
J
=25°C
1
T
J
=25°C
1
0.1
T
J
=-55°C
0.01
0.1
0.01
10
20
30
40
50
60
70
80
90
100
0.1
0.001
0.4 0.6 0.8
1
0.3
0.4
0.5
Pulse width 300μs
1% duty cycle
Pulse width
1.2
0.6
1.4 1.6 1.8
2
0.7
0.8
0.9
2.2
1
1.1
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Fig.9 Typical Transient Thermal Impedance
100
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
PULSE DURATION (s)
0.1
1
10
100
4
Version:A1906
(A)
T
J
=25°C
HS2DAF-T - HS2MAF-T
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
SMAF
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
5
Version:A1906
模拟电子
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