Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
CC
= 1.5V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C and V
CC
= 3.6V.) (Note 1)
PARAMETER
Operating Voltage Range
Supply Current
SYMBOL
V
CC
I
CC
CONDITIONS
T
A
= 0°C to +85°C
T
A
= -40°C to +85°C
V
CC
= 1.8V for V
TH
≤ 1.66V
V
CC
= 3.6V, no load
See Table 1
V
CC
falling, T
A
= +25°C
V
CC
falling,
T
A
= -40°C to +85°C
V
TH
-
1.5%
V
TH
-
2.5%
MIN
1.0
1.2
0.7
1.0
V
TH
V
TH
6.3
40
0.7 x
V
CC
0.7 x
V
CC
25
V
CC
≥ 1.2V, I
SINK
= 100µA
V
CC
≥ 1.65V, I
SINK
= 1mA
V
CC
≥ 1.65V, I
SOURCE
= 500µA
V
CC
≥ 1.2V, I
SOURCE
= 50µA
RESET
not asserted (Note 2)
0.8 x
V
CC
0.8 x
V
CC
0.1
50
75
0.4
0.3
TYP
MAX
5.5
5.5
1.2
1.5
V
TH
+
1.5%
V
TH
+
2.5%
UNITS
V
µA
Detector Threshold
V
TH
V
HYST
∆V
TH
/°C
V
IH
V
IL
V
Detector Threshold Hysteresis
MR
INPUT
Detector Threshold Tempco
V
CC
rising, V
TH
≤ 1.66V (Note 2)
(Note 2)
mV
ppm/°C
MR
Input High Voltage
MR
Pullup Resistance
V
kΩ
RESET/RESET
OUTPUT (Note 3)
Output-Voltage Low
V
OL
V
Output-Voltage High
V
OH
V
Open-Drain
RESET
Output
Leakage Current
TIMING
MR
Minimum Pulse Width
MR
Glitch Rejection
MR
to RESET/RESET
Propagation Delay
V
CC
to Reset Delay
www.maximintegrated.com
µA
t
MPW
t
EGR
t
OFF
t
ON
t
DL
(Note 2)
(Note 2)
MR
falling
MR
rising
V
CC
= (V
TH
+ 100mV) to (V
TH
-100mV)
0.8
100
1
200
20
2
400
90
µs
ns
µs
ns
µs
Maxim Integrated │
2
MAX16072/MAX16073/
MAX16074
Electrical Characteristics (continued)
nanoPower μP Supervisory Circuits in a
4-Bump (1mm x 1mm) Chip-Scale Package
(V
CC
= 1.5V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C and V
CC
= 3.6V.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
V
CC
rising, V
CC
=
(V
TH
- 100mV) to
(V
TH
+ 100mV)
MAX1607_RSD0+
MAX1607_RSD1+
MAX1607_RSD2+
MAX1607_RSD3+
MIN
20
8
34
140
TYP
80
13
52
210
MAX
120
17
69
280
UNITS
µs
ms
ms
ms
Reset Active Timeout Period
t
RP
Note 1:
Production testing done at T
A
= +25°C only. Overtemperature limits are guaranteed by design and are not production
tested.
Note 2:
Guaranteed by design.
Note 3:
Reset is guaranteed down to V
CC
= 1.0V.
Typical Operating Characteristics
(T
A
= +25°C, unless otherwise noted.)
MAX16072 toc01
MAX16072 toc02
SUPPLY CURRENT (µA)
SUPPLY CURRENT (µA)
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0
V
CC
= 1.8V
-40
-15
10
35
60
V
CC
= 3V
V
CC
= 5V
NORMALIZED RESET THRESHOLD (%)
0.2
0.1
0
-0.1
-0.2
-0.3
V
CC
RISING
V
CC
FALLING
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
85
-40
-15
10
35
60
85
TEMPERATURE (°C)
TEMPERATURE (°C)
www.maximintegrated.com
Maxim Integrated │
3
MAX16072 toc03
5
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
3.0
SUPPLY CURRENT
vs. TEMPERATURE
0.3
NORMALIZED RESET THRESHOLD
vs. TEMPERATURE
MAX16072/MAX16073/
MAX16074
nanoPower μP Supervisory Circuits in a
4-Bump (1mm x 1mm) Chip-Scale Package
Typical Operating Characteristics (continued)
(T
A
= +25°C, unless otherwise noted.)
MAX16072 toc04
MAX16072 toc05
1.75
1.50
V
OL
(V)
1.25
1.00
0.75
0.50
0.25
0
0
2
4
6
8
V
CC
= 1.8V
V
CC
= 3V
V
CC
= 5V
4.5
4.0
3.5
V
OH
(V)
3.0
2.5
2.0
1.5
1.0
0.5
0
V
CC
= 1.8V
V
CC
= 3V
V
CC
= 5V
45
TRANSIENT DURATION (µs)
40
35
30
25
20
15
10
5
0
RESET OCCURS ABOVE LINES
V
RST
= 1.63V
V
RST
= 3.08V
1
10
100
1000
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
I
SINK
(mA)
I
SOURCE
(mA)
RESET THRESHOLD OVERDRIVE (mV)
V
CC
TO RESET PROPAGATION DELAY
vs. TEMPERATURE
MAX16072 toc07
MAX16072 toc08
V
OD
= OVERDRIVE VOLTAGE
V
OD
= OVERDRIVE VOLTAGE
V
OD
= 10mV
V
OD
= 100mV
V
OD
= 20mV
PROPAGATION DELAY (µs)
V
OD
= 100mV V
OD
= 200mV
40
80
60
40
20
RESET DELAY (ns)
60
PROPAGATION DELAY (µS)
100
120
90
60
30
20
V
OD
= 10mV
V
OD
= 20mV
V
CC
FALLING
-40
-15
10
35
60
85
V
OD
= 200mV
V
CC
RISING
-40
-15
10
35
60
85
0
0
MR RISING
0
1.650
1.925
2.200
V
CC
(V)
2.475
2.750
TEMPERATURE (°C)
TEMPERATURE (°C)
1.00
RESET DELAY (µs)
0.75
0.50
0.25
0
1.650
MR FALLING
1.925
2.200
V
CC
(V)
2.475
MAX16072 toc10
1.25
MR TO RESET DELAY (t
OFF
)
vs. V
CC
MR TURN-ON
MAX16072 toc11
MR TURN-OFF
MAX16072 toc12
MR
1V/div
RESET
1V/div
2.750
100ns/div
200ns/div
www.maximintegrated.com
Maxim Integrated │
4
MAX16072 toc09
80
120
V
CC
TO RESET PROPAGATION DELAY
vs. TEMPERATURE
150
MR TO RESET DELAY (t
ON
)
vs. V
CC
MAX16072 toc06
2.00
OUTPUT LOW VOLTAGE
vs. SINK CURRENT
5.0
OUTPUT HIGH VOLTAGE
vs. SOURCE CURRENT
50
MAXIMUM TRANSIENT DURATION
vs. RESET THRESHOLD OVERDRIVE
MR
1V/div
RESET
1V/div
MAX16072/MAX16073/
MAX16074
Bump Configuration
nanoPower μP Supervisory Circuits in a
4-Bump (1mm x 1mm) Chip-Scale Package
MAX16072
MAX16073
TOP VIEW
(BUMP SIDE DOWN)
MAX16074
1
2
V
CC
+
A
GND
B
RESET/
(RESET)
MR
UCSP
( ) FOR THE MAX16073 ONLY
Bump Description
BUMP
MAX16072
A1
MAX16073
A1
MAX16074
A1
NAME
GND
Ground
Active-Low Push-Pull Reset Output.
RESET
changes from high to
low when V
CC
drops below the detector threshold (V
TH
) or
MR
is
pulled low.
RESET
remains low for the reset timeout period after V
CC
exceeds V
TH
and
MR
is high. When
MR
is low,
RESET
is low.
Active-High Push-Pull Reset Output.
RESET
changes from low to high
when V
CC
drops below the detector threshold (V
TH
) or
MR
is pulled low.
RESET
remains high for the reset timeout period after V
CC
exceeds
V
TH
and
MR
is high. When
MR
is low,
RESET
is high.
Active-Low Open-Drain Reset Output.
RESET
changes from high-
impedance to active-low when V
CC
drops below the detector
threshold (V
TH
) or
MR
is pulled low.
RESET
remains low for the
reset timeout period after V
CC
exceeds the reset threshold and
MR
is
high. When
MR
is low,
RESET
is low.
Supply Voltage and Input for the Reset Threshold Monitor
Active-Low Manual-Reset Input. Drive low to force a reset. Reset
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射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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