SUP/SUB85N08-08
New Product
Vishay Siliconix
N-Channel 75-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
75
r
DS(on)
(W)
0.008 @ V
GS
= 10 V
I
D
(A)
85
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N08-08
D S
S
N-Channel MOSFET
Top View
SUB85N08-08
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
175 C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
75
"20
85
a
67
a
240
75
280
250
c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
www.vishay.com
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
2-1
SUP/SUB85N08-08
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.0063
0.008
0.014
0.018
S
W
75
V
2.5
"100
1
50
250
A
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 35 V, R
L
= 0 4
W
V,
0.4
I
D
^
85 A, V
GEN
= 10 V R
G
= 2 5
W
A
V,
2.5
V
DS
= 35 V, V
GS
= 10 V I
D
= 85 A
V
V,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5800
900
285
100
35
25
20
115
50
80
30
175
ns
75
120
150
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
A, di/dt
A/ms
I
F
= 85 A di/d = 100 A/
I
F
= 85 A, V
GS
= 0 V
1.0
70
4
0.14
85
A
240
1.5
120
7
0.30
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
SUP/SUB85N08-08
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 7 V
200
I
D
– Drain Current (A)
6V
I
D
– Drain Current (A)
200
250
Vishay Siliconix
Transfer Characteristics
150
150
100
5V
50
4, 3 V
0
0
2
4
6
8
10
100
T
C
= 125_C
50
25_C
–55_C
0
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
240
T
C
= –55_C
r
DS(on)
– On-Resistance (
W
)
200
g
fs
– Transconductance (S)
25_C
160
125_C
120
0.008
0.010
On-Resistance vs. Drain Current
V
GS
= 10 V
0.006
0.004
80
40
0.002
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
8000
7000
V
GS
– Gate-to-Source Voltage (V)
6000
C – Capacitance (pF)
5000
4000
3000
2000
1000
0
0
15
30
45
60
75
C
iss
16
20
Gate Charge
V
DS
= 35 V
I
D
= 85 A
12
8
C
rss
C
oss
4
0
0
50
100
150
200
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
Q
g
– Total Gate Charge (nC)
www.vishay.com
2-3
SUP/SUB85N08-08
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
2.0
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
10
T
J
= 25_C
1.0
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
95
Drain Source Breakdown vs.
Junction Temperature
90
100
I
AV
(A) @ T
A
= 25_C
I
Dav
(a)
V
(BR)DSS
(V)
85
I
D
= 250
mA
10
I
AV
(A) @ T
A
= 150_C
1
80
75
0.1
0.00001
0.0001
0.001
0.01
0.1
1
70
–50
–25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
– Junction Temperature (_C)
www.vishay.com
2-4
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
SUP/SUB85N08-08
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1000
Vishay Siliconix
Safe Operating Area
80
100
I
D
– Drain Current (A)
60
I
D
– Drain Current (A)
10
ms
100
ms
Limited
by r
DS(on)
10
1 ms
10 ms
100 ms
dc
40
20
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Ambient Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
www.vishay.com
2-5
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