BCR12PM-14LG
Triac
Medium Power Use
REJ03G1556-0100
Rev.1.00
Jul 06, 2007
Features
•
•
•
•
I
T (RMS)
: 12 A
V
DRM
: 800 V (Tj = 125°C)
I
FGTI
, I
RGTI
, I
RGTIII
: 30 mA
Viso : 2000 V
•
The Product guaranteed maximum junction
temperature 150°C
•
Insulated Type
•
Planar Type
•
UL Recognized: Yellow Card No. E223904
File No. E80271
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
14
800
700
840
Unit
V
V
V
Conditions
Tj = 125°C
Tj = 150°C
REJ03G1556-0100
Page 1 of 7
Rev.1.00
Jul 06, 2007
BCR12PM-14LG
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
12
120
60
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 93°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
4.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 20 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C/150°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C/150°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
REJ03G1556-0100
Page 2 of 7
Rev.1.00
Jul 06, 2007
BCR12PM-14LG
Performance Curves
Maximum On-State Characteristics
10
2
7
5
200
Rated Surge On-State Current
Surge On-State Current (A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
Tj = 150°C
Tj = 25°C
1.5
2
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
GM
= 10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
I
RGT I
, I
RGT III
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.1V
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
3
10
4
Typical Example
10
–1
2 3 5 710
0
2 3 5 710
1
2 3 5 710
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G1556-0100
Page 3 of 7
Rev.1.00
Jul 06, 2007
BCR12PM-14LG
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (°C/W)
10
3
On-State Power Dissipation (W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
140
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
100
80
60
40
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
140
120
100
80
All fins are black painted
aluminum and greased
Case Temperature (°C)
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
360° Conduction
20
Resistive,
inductive loads
0
0
2
6
4
8
10
12
14
16
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0
2
6
4
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Junction Temperature (°C)
REJ03G1556-0100
Page 4 of 7
Rev.1.00
Jul 06, 2007
BCR12PM-14LG
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
10
0
–40
Junction Temperature (°C)
Junction Temperature (°C)
160
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (t°C)
×
100 (%)
Breakover Voltage (25°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
10
2
7
5
3
2
10
1
7
Minimum
5
Characteristics
Value
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
III Quadrant
III Quadrant
I Quadrant
3
2
I Quadrant
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Rate of Rise of Off-State Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1556-0100
Page 5 of 7
Rev.1.00
Jul 06, 2007
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
