CEM8207
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
5
FEATURES
20V , 6A , R
DS(ON)
=20m
Ω
@V
GS
=4.5V.
R
DS(ON)
=30m
Ω
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
1
2
3
S
2
4
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
S
1
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
20
12
6
24
6
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.5
C/W
5-78
CEM8207
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
C
ISS
C
OSS
C
RSS
c
Symbol
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 2.5V, I
D
= 5.2A
V
DS
= 5V, V
GS
= 4.5V
V
DS
=10V, I
D
= 6.0A
Min Typ
C
Max Unit
5
20
1
10
0.5
17
23
10
7
16
950
450
135
1.5
20
30
V
µA
µA
V
mΩ
mΩ
A
S
P
F
P
F
P
F
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 10V,
I
D
= 1A,
V
GS
= 4.5V,
R
GEN
= 6Ω
20
20
72
20
15
40
40
130
40
20
ns
ns
ns
ns
nC
nC
nC
V
DS
=10V, I
D
= 6A,
V
GS
=4.5V
5-79
3.4
1.2
CEM8207
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.75 1.2
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
25
V
GS
=4.5,3.5,2.5V
16
V
GS
=2.0V
20
I
D
, Drain Current(A)
I
D
, Drain Current (A)
12
15
8
10
4
5
Tj=125 C
0
0.0
0.5
1
1.5
25 C
-55 C
2
2.5
3
V
GS
=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON)
, Normalized
R
DS(ON)
,
On-Resistance(Ohms)
2400
2000
Figure 2. Transfer Characteristics
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25
0
25
50
75
100 125 150
I
D
=6.0A
V
GS
=4.5V
C, Capacitance (pF)
1600
1200
800
Coss
400
Crss
0
Ciss
0
2
4
6
8
10
12
V
DS
, Drain-to Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
5-80
CEM8207
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.60
1.40
1.20
1.00
0.80
0.60
0.40
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
1.15
I
D
=250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
5
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
30
Figure 6. Breakdown Voltage Variation
with Temperature
50
g
FS
, Transconductance (S)
Is, Source-drain current (A)
25
20
15
10
V
DS
=10V
5
0
0
3
6
9
12
15
10
1
0.1
0.4
0.6
0.8
1.0
1.2
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
5
I
D
, Drain Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
GS
, Gate to Source Voltage (V)
4
3
2
1
0
0
V
DS
=4.5V
I
D
=6A
10
1
RD
O
S(
N)
Lim
it
10
1m
m
s
10
10
s
0m
1s
s
s
10
0
DC
10
-1
-2
10
T
A
=25 C
Tj=150 C
Single Pulse
10
1
10
0
10
1
2
4
6
8
10 12 14 16
10
-1
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
5-81
Figure 10. Maximum Safe
Operating Area
CEM8207
V
DD
t
on
t
off
t
r
90%
5
V
GS
R
GEN
V
IN
D
G
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
90%
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10
2
0
r(t),Normalized Effective
Transient Thermal Impedance
1
D=0.5
Duty Cycle=0.5
0.2
10
-1
0.1
0.2
0.05
0.1
10
-2
0.1
0.02
0.05
0.01
0.02
Single Pulse
Single Pulse
P
DM
t
1
P
DM
t
2
t
1
t
2
1. R
JA
(t)=r (t) *
JA
(t)=r (t) * R
JA
1. R R
JA
2. R
JA
=See R
JA
=See Datasheet
2. Datasheet
P* R
JA
(t)
3. T
JM-
T
A
=3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t1/t2 D=t
1
/t
2
4. Duty Cycle,
10 10
-2 -2
0.01
10
-3
10
-4
10
10
-3-3
10
-1
10
-1
10
0
1
10
1
10
10
2
100
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5-82
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