GT40Q322
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Preliminary
GT40Q322
Unit: mm
Voltage Resonance Inverter Switching Application
•
•
•
•
•
Enhancement-mode
High speed : t
f
= 0.14 µs (typ.) (I
C
= 40A)
FRD included between emitter and collector
The 4th generation
TO-3P(N) (Toshiba package name)
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
Pulsed collector current
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
Pulsed
@ Tc
=
100°C
@ Tc
=
25°C
@ Tc
=
100°C
@ Tc
=
25°C
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FP
P
C
T
j
T
stg
Rating
1200
±25
20
39
80
10
80
80
200
150
−55
to 150
Unit
V
V
A
A
A
W
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R
th (j-c)
R
th (j-c)
Max
0.625
1.79
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
2003-07-07
GT40Q322
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030519EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3
2003-07-07
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