DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYV28 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
DESCRIPTION
BYV28 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYV28-50
BYV28-100
BYV28-150
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
V
R
continuous reverse voltage
BYV28-50
BYV28-100
BYV28-150
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
I
F(AV)
average forward current
BYV28-50 to 400
BYV28-500 and 600
I
F(AV)
average forward current
BYV28-50 to 400
BYV28-500 and 600
,
a
MAM104
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
50
100
150
200
300
400
500
600
50
100
150
200
300
400
500
600
3.5
3.1
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
T
tp
= 85
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 60
°C;
printed-circuit board
mounting (see Fig.20);
see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
−
−
1.9
1.5
A
A
1997 Nov 24
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
I
FRM
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.12
T
amb
= 60
°C;
see Figs 8 and 9
−
−
−
CONDITIONS
T
tp
= 85
°C;
see Figs 6 and 7
−
−
BYV28 series
MIN.
MAX.
32
31
17
16
90
A
A
A
A
A
UNIT
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
20
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
V
F
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
V
(BR)R
reverse avalanche breakdown
voltage
BYV28-50
BYV28-100
BYV28-150
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
I
R
reverse current
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYV28-50 to 200
BYV28-300 to 600
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.22
3
I
R
= 0.1 mA
55
110
165
220
330
440
560
675
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
V
µA
µA
I
F
= 3.5 A;
see Figs 13, 14 and 15
CONDITIONS
I
F
= 3.5 A; T
j
= T
j max
;
see Figs 13, 14 and 15
MIN.
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX.
0.80
0.83
0.98
1.02
1.05
1.25
V
V
V
V
V
V
UNIT
−
−
−
−
25
50
ns
ns
1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
C
d
PARAMETER
diode capacitance
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
dI
R
--------
dt
maximum slope of reverse
recovery current
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
−1
A/µs; see Fig.21
CONDITIONS
f = 1 MHz; V
R
= 0;
see Figs 17, 18 and 19
MIN.
−
−
−
−
BYV28 series
TYP.
190
150
125
−
MAX.
−
−
−
4
UNIT
pF
pF
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.20
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
25
75
UNIT
K/W
K/W
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MGA868
BYV28 series
handbook, halfpage
4
handbook, halfpage
5
MGK640
I F(AV)
(A)
3
20
15
10 lead length (mm)
IF(AV)
(A)
4
lead length 10 mm
3
2
2
1
1
0
0
100
Ttp ( C)
o
200
0
0
BYV28-500 and 600
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp (°C)
200
BYV28-50 to 400
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
3
MLC206
handbook, halfpage
2.0
MGK641
IF(AV)
I F(AV)
(A)
2
(A)
1.6
1.2
0.8
1
0.4
0
0
100
Tamb ( C)
o
200
0
0
100
Tamb (°C)
200
BYV28-50 to 400
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5; switched mode application.
Device mounted as shown in Fig.20.
BYV28-500 and 600
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5; switched mode application.
Device mounted as shown in Fig.20.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1997 Nov 24
5
stm32/stm8
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