Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BY329-1500, BY329-1500S
SYMBOL
QUICK REFERENCE DATA
V
R
= 1500 V
V
F
≤
1.35 V / 1.5 V
I
F(peak)
= 6 A (f = 16 kHz)
I
F(peak)
= 6 A (f = 70 kHz)
I
FSM
≤
75 A
t
rr
≤
230 ns / 160 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
T
stg
T
j
Peak non-repetitive peak
reverse voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
BY329
Peak working forward current
Peak repetitive forward
current
RMS forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction
temperature
f = 16 kHz
f = 70 kHz
t = 25
µs; δ
= 0.5;
T
mb
≤
123 ˚C
t = 10 ms
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
-
-
-
-
-
-40
-
CONDITIONS
MIN.
-
-
-
MAX.
1500
1500
1300
-1500
6
-
14
11
75
150
150
-1500S
-
6
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
CONDITIONS
MIN.
-
-
TYP.
-
60
MAX.
2.0
-
UNIT
K/W
K/W
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air
ambient
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V
F
I
R
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 ˚C
V
R
= 1300 V
V
R
= 1300 V; T
j
= 125 ˚C
BY329-1500, BY329-1500S
TYP.
1.1
1.05
-
-
1.3
1.2
250
1
MAX.
1.45
1.35
-
-
1.6
1.5
250
1
UNIT
V
V
µA
mA
BY329 1500 1500S 1500 1500S
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t
rr
Q
s
V
fr
t
fr
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
Forward recovery time
CONDITIONS
I
F
= 1 A; V
R
≥
30 V;
dI
F
/dt = 50A/µs
I
F
= 2 A; -dI
F
/dt = 20 A/µs
I
F
= 6.5A; dI
F
/dt = 50A/µs
I
F
= 6.5A; dI
F
/dt = 50A/µs
TYP.
BY329 1500 1500S
0.18
1.6
17
210
0.13
0.7
23
220
MAX.
1500
0.23
2.0
30
300
1500S
0.16
0.95
40
320
µs
µC
V
ns
UNIT
I
F
I
dI
F
dt
F
trr
10%
tfr
VF
Qs
time
time
V
VF
5V
time
25%
100%
fr
I
R
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1500, BY329-1500S
VCC
IF / A
30
Tj = 125 C
Tj = 25 C
BY32915S
Line output transformer
LY
20
10
typ
Cf
deflection transistor
D1
Cs
max
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Transient thermal impedance, Zth j-mb (K/W)
100
Maximum pulse width / us
V
BY459X-1500
VRRM
10
1
pulse
width tp
time
period T
10
0.1
0.01
P
D
t
p
D=
t
p
T
t
1
10
line frequency / kHz
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229
10s
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.7. Transient thermal impedance Z
th
= f(t
p
)
30
IF / A
Tj = 125 C
Tj = 25 C
BY32915
20
10
typ
max
0
0
0.5
1
1.5
VF / V
2
Fig.5. BY329-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BY329-1500, BY329-1500S
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.8. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BY329-1500, BY329-1500S
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.100
嵌入式系统
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