DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ34
NPN 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
PINNING
PIN
1
2
3
4
DESCRIPTION
Code: BFQ34/01
collector
emitter
base
emitter
2
Top view
lfpage
BFQ34
4
1
3
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
V
o
PARAMETER
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
up to T
c
= 160
°C
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
d
im
=
−60
dB
f
(p+q-r)
= 793.25 MHz
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
Ω;
f = 800 MHz; T
amb
= 25
°C
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
open base
CONDITIONS
open emitter
TYP.
−
−
−
−
1.2
I
C
= 150 mA; V
CE
= 15 V; f = 500 MHz 4
MAX.
25
18
150
2.7
−
−
UNIT
V
V
mA
W
GHz
V
P
L1
ITO
output power at 1 dB gain
compression
third order intercept point
26
45
−
−
dBm
dBm
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
c
= 160
°C
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFQ34
MAX.
25
18
2
150
2.7
150
200
UNIT
V
V
V
mA
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-c
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
PARAMETER
collector cut-off current
DC current gain
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 15 V
I
C
= 75 mA; V
CE
= 15 V
I
C
= 150 mA; V
CE
= 15 V
I
C
= 150 mA; V
CE
= 15 V;
f = 500 MHz
C
c
C
e
C
re
C
c-s
F
G
UM
V
o
P
L1
ITO
Notes
1. Measured with grounded emitter and base.
2. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-------------------------------------------------------------
dB.
-
=
10 log
2
2
1
–
S
11
1
–
S
22
2
BFQ34
MIN. TYP. MAX. UNIT
−
25
25
3.5
−
−
−
−
−
−
−
−
−
−
70
70
3.5
4
2
11
1
0.8
8
16.3
1.2
26
45
100
−
−
−
−
2.75
−
1.35
−
−
−
−
−
−
GHz
GHz
pF
pF
pF
pF
dB
dB
V
dBm
dBm
µA
I
C
= 75 mA; V
CE
= 15 V; f = 500 MHz 3
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
noise figure (see Fig.2)
maximum unilateral power gain
(note 2)
output voltage
output power at 1 dB gain
compression (see Fig.2)
third order intercept point (see Fig.2)
I
E
= 0; V
CB
= 15 V; f = 1 MHz
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 15 V; f = 1 MHz;
T
amb
= 25
°C
note 1
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
= 25
°C
Figs 2 and 7 and note 3
note 4
note 5
3. d
im
=
−60
dB (DIN 45004B, par. 6.3.: 3-tone); I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
O
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB; f
q
= 803.25 MHz;
V
r
= V
O
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
4. I
C
= 120 mA; V
CE
= 15 V; T
amb
= 25
°C;
R
L
= 75
Ω;
measured at f = 800 MHz.
5. I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
P
p
= ITO
−
6 dB; f
p
= 800 MHz;
P
q
= ITO
−
6 dB; f
q
= 801 MHz;
measured at f
(2q−p)
= 802 MHz and at f
(2p−q)
= 799 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MBB361
handbook, halfpage
120
handbook, halfpage
2.2 nF
2.2 nF
VCC
h FE
VBB
L2
L1
200
Ω
10 nF
10 nF
input
75
Ω
10 nF
DUT
0.68 pF
24
Ω
24
Ω
80
output
75
Ω
40
0
MEA322
0
40
80
120
160
I C (mA)
f = 40 to 860 MHz; L1 = L2 = 5
µH
Ferroxcube coil.
V
CE
= 15 V; T
j
= 25
°C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
DC current gain as a function of collector
current.
MEA320
handbook, halfpage
6
handbook, halfpage
8
MBB357
Cc
(pF)
fT
(GHz)
6
4
4
2
2
0
0
10
VCB (V)
20
0
0
40
80
120
I C (mA)
160
I
E
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
= 15 V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Collector capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
5
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