DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY78; BCY79
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 18
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Switching and amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
3
BCY78; BCY79
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
1
handbook, halfpage
2
3
2
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BCY78
BCY79
V
CEO
collector-emitter voltage
BCY78
BCY79
I
C
P
tot
h
FE
collector current (DC)
total power dissipation
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
f
T
t
off
transition frequency
turn-off time
I
C
=
−10
mA; V
CE
=
−5
V
T
amb
≤
45
°C
T
case
≤
45
°C
I
C
=
−2
mA; V
CE
=
−5
V
120
180
250
380
100
I
Con
=
−100
mA; I
Bon
=
−10
mA; I
Boff
= 10 mA
−
220
310
460
630
−
400
MHz
ns
open base
−
−
−
−
−
−32
−45
−100
340
1
V
V
mA
mW
W
open emitter
−
−
−32
−45
V
V
CONDITIONS
MIN.
MAX.
UNIT
1997 Jun 18
2
Philips Semiconductors
Product specification
PNP switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCY78
BCY79
V
CEO
collector-emitter voltage
BCY78
BCY79
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
45
°C
T
case
≤
45
°C
open collector
−
−
−
−
−
−65
−
−65
open base
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCY78; BCY79
MIN.
MAX.
−32
−45
−32
−45
−5
−100
−200
−200
340
1
+150
200
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
450
150
UNIT
K/W
K/W
1997 Jun 18
3
Philips Semiconductors
Product specification
PNP switching transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BCY78
I
CBO
collector cut-off current
BCY79
I
EBO
h
FE
emitter cut-off current
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
h
FE
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
h
FE
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
h
FE
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
V
CEsat
V
BEsat
V
BE
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−250 µA
I
C
=
−100
mA; I
B
=
−2.5
mA
base-emitter saturation voltage
base-emitter voltage
I
C
=
−10
mA; I
B
=
−250 µA
I
C
=
−100
mA; I
B
=
−2.5
mA
I
C
=
−10 µA;
V
CE
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−100
mA; V
CE
=
−1
V
40
45
60
60
−
−
I
C
=
−10
mA; V
CE
=
−1
V
80
120
160
240
I
C
=
−2
mA; V
CE
=
−5
V
120
180
250
380
I
E
= 0; V
CB
=
−45
V
I
E
= 0; V
CB
=
−45
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−10 µA;
V
CE
=
−5
V
−
30
40
100
−
−
−
PARAMETER
collector cut-off current
I
E
= 0; V
CB
=
−32
V
I
E
= 0; V
CB
=
−32
V; T
amb
= 150
°C
−
−
CONDITIONS
BCY78; BCY79
MIN.
TYP.
−2
−
−2
−
−
140
200
270
340
170
250
350
500
180
260
360
500
−
−
−
−
−120
−400
−700
−850
−550
−650
−650
−750
−
−
−
MAX.
−15
−10
−15
−10
−20
−
−
−
−
220
310
460
630
−
400
630
1000
−
−
−
−
−250
−800
−850
−
−750
−
−
7
15
−
UNIT
nA
µA
nA
µA
nA
mV
mV
mV
mV
mV
mV
mV
pF
pF
MHz
−600
−700
−
−600
−
−
−
−
−1200
mV
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
1997 Jun 18
4
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
SYMBOL
F
PARAMETER
noise figure
CONDITIONS
I
C
=
−200 µA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
I
Con
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA; test conditions A
MIN.
−
TYP.
−
MAX.
10
UNIT
dB
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
−100
mA; I
Bon
=
−10
mA;
I
Boff
= 10 mA; test conditions B
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
50
50
700
600
100
100
35
65
400
300
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ndbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
Test conditions A
V
i
=
−5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
= 1.9 V; V
CC
=
−3
V
Oscilloscope input impedance Z
i
= 50
Ω.
Test conditions B
V
i
=
−9.8
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 62
Ω;
R2 = 470
Ω;
R
B
= 470
Ω;
R
C
= 100
Ω.
V
BB
= 3.4 V; V
CC
=
−10.8
V
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1997 Jun 18
5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
