DISCRETE SEMICONDUCTORS
DATA SHEET
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
FEATURES
•
Interchangeability of drain and source connections
•
High I
DSS
range
•
Frequency up to 450 MHz.
APPLICATIONS
•
VHF and UHF amplifiers
•
Mixers
•
General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
SYMBOL
DESCRIPTION
BF246A; BF246B; BF246C
1
2
3
d
g
s
drain
gate
source
BF247A; BF247B; BF247C
1
2
3
d
s
g
drain
source
gate
handbook, halfpage
2
1
3
g
MAM257
d
s
Fig.1
Simplified outline (TO-92 variant)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSoff
I
DSS
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
P
tot
y
fs
C
rs
T
j
total power dissipation
forward transfer admittance
reverse transfer capacitance
operating junction temperature
up to T
amb
= 50
°C
I
D
= 10 mA; V
DS
= 15 V;
f = 1 kHz
I
D
= 10 mA; V
DS
= 15 V;
f = 1 MHz
I
D
= 10 nA; V
DS
= 15 V
V
DS
= 15 V; V
GS
= 0
30
60
110
−
8
−
−
−
−
−
−
−
3.5
−
80
140
250
400
−
−
150
mA
mA
mA
mW
mS
pF
°C
CONDITIONS
−
−0.6
MIN.
−
−
TYP.
MAX.
±25
−14.5
UNIT
V
V
1996 Jul 29
2
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
G
P
tot
T
stg
T
j
gate current
total power dissipation
storage temperature
operating junction temperature
PARAMETER
drain-source voltage
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
CONDITIONS
−
−
up to T
amb
= 50
°C
−
MIN.
MAX.
±25
10
400
+150
150
V
UNIT
mA
mW
°C
°C
−65
−
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
(BR)GSS
V
GSoff
V
GS
PARAMETER
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
I
DSS
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
I
GSS
Note
1. Measured under pulse conditions: t
p
= 300
µs; δ ≤
0.02.
DYNAMIC CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
C
is
C
rs
C
os
y
fs
f
gfs
PARAMETER
input capacitance
reverse transfer capacitance
output capacitance
forward transfer admittance
cut-off frequency
CONDITIONS
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 kHz; V
DS
= 15 V
g
fs
= 0.7 of its value at 1 kHz; V
GS
= 0
MIN.
−
−
−
8
−
TYP.
11
3.5
5
17
450
MAX. UNIT
−
−
−
−
−
pF
pF
pF
mS
MHz
gate leakage current
V
GS
=
−15
V; V
DS
= 0
V
GS
= 0; V
DS
= 15 V; note 1
30
60
110
−
−
−
−
−
80
140
250
−5
mA
mA
mA
nA
CONDITIONS
I
G
=
−1 µA;
V
DS
= 0
I
D
= 10 nA; V
DS
= 15 V
I
D
= 200
µA;
V
DS
= 15 V
−1.5
−3.0
−5.5
−
−
−
−4.0
−7.0
−12.0
V
V
V
MIN.
−25
−0.6
−
−
TYP.
−
−14.5
MAX.
V
V
UNIT
1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
PACKAGE OUTLINE
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
handbook, full pagewidth
0.40
min
4.2 max
1.7
1.4
1
4.8
max
2.54
3
2
5.2 max
12.7 min
0.48
0.40
0.66
0.56
2.5 max
(1)
MBC015 - 1
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
Fig.2 TO-92 variant.
1996 Jul 29
4
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
5
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