DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC516
PNP Darlington transistor
Product specification
Supersedes data of 1997 Apr 16
1999 Apr 23
Philips Semiconductors
Product specification
PNP Darlington transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 30 V)
•
Very high DC current gain (min. 30000).
APPLICATIONS
•
Where very high amplification is required.
handbook, halfpage
BC516
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
2
3
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BC517.
1
2
3
TR1
TR2
1
MAM303
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage (open emitter)
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
V
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−30
−10
−500
−800
−100
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP Darlington transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−10
V
I
C
=
−20
mA; V
CE
=
−2
V; see Fig.2
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−10
mA; V
CE
=
−5
V
MIN.
−
−
−
−
−
TYP.
−
−
−
−
−
220
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
250
BC516
UNIT
K/W
MAX.
−100
−100
−
−1
−1.5
−1.4
−
UNIT
nA
nA
V
V
V
MHz
30000
−
collector-emitter saturation voltage I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−30
mA; V
CE
=
−5
V; f = 100 MHz
−
handbook, full pagewidth
100000
hFE
MGD836
80000
60000
40000
20000
0
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−2
V.
Fig.2 DC current gain; typical values.
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP Darlington transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC516
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP Darlington transistor
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
BC516
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
