DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC817W
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 05
1999 Apr 15
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complement: BC807W.
MARKING
TYPE
NUMBER
BC817W
BC817-16W
BC817-25W
BC817-40W
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING
CODE
(1)
6D∗
6A∗
6B∗
6C∗
TYPE
NUMBER
BC818W
BC818-16W
BC818-25W
BC818-40W
MARKING
CODE
(1)
6H∗
6E∗
6F∗
6G∗
Top view
MAM062
BC817W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
2
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
= 10 mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
50
45
5
500
1
200
200
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC817W
BC817-16W
BC817-25W
BC817-40W
DC current gain
V
CEsat
V
BE
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
= 500 mA; V
CE
= 1 V; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 500 mA; V
CE
= 1 V; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V; note 1;
see Figs 2, 3 and 4
−
−
−
100
100
160
250
40
−
−
−
100
MIN.
5
100
600
250
400
600
−
700
1.2
5
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BC817W
UNIT
K/W
MAX.
100
UNIT
nA
µA
nA
mV
mV
pF
MHz
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817W
handbook, full pagewidth
20
MBH721
hFE
160
VCE = 1 V
120
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
BC817-16W.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
500
MBH720
hFE
400
VCE = 1 V
300
200
100
0
10
−1
BC817-25W.
1
10
10
2
IC (mA)
10
3
Fig.3 DC current gain; typical values.
1999 Apr 15
4
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817W
handbook, full pagewidth
500
MBH722
hFE
400
VCE = 1 V
300
200
100
0
10
−1
1
10
10
2
IC (mA)
10
3
BC817-40W.
Fig.4 DC current gain; typical values.
1999 Apr 15
5
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