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NSCT817-25LT1G

产品描述transistor npn 45v sot-23
产品类别半导体    分立半导体   
文件大小53KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准  
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NSCT817-25LT1G概述

transistor npn 45v sot-23

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NSCT817−25LT1G,
NSCT817−40LT1G
General Purpose Transistors
NPN Silicon
Features
http://onsemi.com
These are Pb−Free Devices
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
2
1
BASE
2
EMITTER
3
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
xxx M
G
G
1
xxx = Specific Device Code
(725 for −25 device)
(74L for −40 device)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
Device
NSCT817−25LT1G
NSCT817−40LT1G
NSCT817−25LT3G
Package
SOT−23
(Pb−Free)
Shipping
3000 Tape & Reel
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
(Pb−Free)
NSCT817−40LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 0
Publication Order Number:
NSCT817−25LT1/D

NSCT817-25LT1G相似产品对比

NSCT817-25LT1G NSCT817-40LT3G NSCT817-40LT1G NSCT817-25LT3G
描述 transistor npn 45v sot-23 transistor npn 45v sot-23 transistor npn 45v sot-23 transistor npn 45v sot-23
Standard Package - 10,000 3,000 10,000
Category - Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products
Family - Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single
系列
Packaging
- Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Transistor Type - NPN NPN NPN
Current - Collector (Ic) (Max) - 100mA 100mA 500mA
Voltage - Collector Emitter Breakdown (Max) - 45V 45V 45V
Vce Saturation (Max) @ Ib, Ic - 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce - 250 @ 100mA, 1V 250 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max - 225mW 225mW 225mW
Frequency - Transiti - 100MHz 100MHz 100MHz
Mounting Type - Surface Mou Surface Mou Surface Mou
封装 / 箱体
Package / Case
- TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

 
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