BC489, A, B
High Current Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Collector −Emitter Voltage
Collector Current − Continuous
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
80
80
5.0
0.5
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
12
3
TO−92
CASE 29
STYLE 17
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
BC
489x
AYWW
G
G
BC489x = Device Code
x = A or B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number:
BC489/D
BC489, A, B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 V, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
Collector −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc) (Note 1)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2.0%.
f
T
C
ob
C
ib
−
−
−
200
7.0
50
−
−
−
MHz
pF
pF
V
CE(sat)
−
−
V
BE(sat)
−
−
0.85
0.9
1.2
−
0.2
0.3
0.5
−
Vdc
h
FE
BC489
BC489A
BC489B
40
60
100
160
15
−
−
160
260
−
−
400
250
400
−
Vdc
−
V
(BR)CEO
80
V
(BR)CBO
80
V
(BR)EBO
I
CBO
−
−
100
5.0
−
−
−
−
Vdc
nAdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
TURN−ON TIME
5.0
ms
+10 V
0
t
r
= 3.0 ns
−1.0 V
100
V
in
5.0
mF
R
B
100
V
CC
+40 V
R
L
OUTPUT
V
in
TURN−OFF TIME
+V
BB
100
R
B
5.0
mF
5.0
ms
t
r
= 3.0 ns
100
V
CC
+40 V
R
L
OUTPUT
*C
S
< 6.0 pF
*C
S
< 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
2
BC489, A, B
BANDWIDTH PRODUCT (MHz)
300
200
V
CE
= 2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
80
60
40
C
ibo
T
J
= 25°C
100
70
50
20
f T, CURRENT−GAIN
10
8.0
6.0
C
obo
0.2
0.5 1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
4.0
0.1
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
200
t, TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
10
t
s
t
f
t
r
t
d
@ V
BE(off)
= 0.5 V
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
10
5.0 7.0
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
Z
qJA(t)
= r(t)
•
R
qJA
20
50
100
200
500
1.0 k
2.0 k
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−469)
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
0.1
0.07
0.05
0.03
0.02
0.01
1.0
2.0
5.0
10
5.0 k
10 k
20 k
50 k 100 k
t, TIME (ms)
Figure 5. Thermal Response
http://onsemi.com
3
BC489, A, B
1.0 k
700
500
300
200
100
70
50
30
20
10
1.0
T
A
= 25°C
T
C
= 25°C
1.0 s
100
ms
1.0 ms
IC, COLLECTOR CURRENT (mA)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
BC489
20 30
50
2.0 3.0
5.0 7.0 10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70
100
Figure 6. Active Region — Safe Operating Area
400
T
J
=125°C
200
25°C
−55°C
100
80
60
40
hFE , DC CURRENT GAIN
V
CE
= 1.0 V
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
Figure 7. DC Current Gain
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
1.0
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
0.6
0.4
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
200
500
0.2
0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
20
50
Figure 8. “On” Voltages
Figure 9. Collector Saturation Region
http://onsemi.com
4
BC489, A, B
R
θ
VB, TEMPERATURE COEFFICIENT (mV/ C)
°
−0.8
−1.2
V, VOLTAGE (VOLTS)
−1.0
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE(on)
@ V
CE
= −1.0 V
−1.6
R
qVB
for V
BE
−2.0
−0.4
−2.4
−2.8
0.5
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
200
500
0
−0.5
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
Figure 10. Base−Emitter Temperature Coefficient
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
R
θ
VB, TEMPERATURE COEFFICIENT (mV/ C)
°
−1.0
T
J
= 25°C
−0.8
−0.8
Figure 11. “On” Voltages
−1.2
−0.6
−1.6
R
qVB
for V
BE
−0.4
I
C
= −10 mA
−2.0
−50 mA −100 mA
−250 mA −500 mA
−0.2
0
−0.05 −0.1 −0.2
−2.4
−2.8
−0.5
−0.5 −1.0 −2.0
−5.0
I
B
, BASE CURRENT (mA)
−10
−20
−50
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
Figure 12. Collector Saturation Region
Figure 13. Base−Emitter Temperature Coefficient
ORDERING INFORMATION
Device Order Number
BC489
BC489G
BC489RL1
BC489RL1G
BC489A
BC489AG
BC489AZL1
BC489AZL1G
BC489BZL1
BC489BZL1G
Package Type
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
