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12063A272DA72A

产品描述Ceramic Capacitor, Ceramic, 25V, 0.0185% +Tol, 0.0185% -Tol, C0G, -/+30ppm/Cel TC, 0.0027uF, 1206,
产品类别无源元件    电容器   
文件大小298KB,共20页
制造商AVX
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12063A272DA72A概述

Ceramic Capacitor, Ceramic, 25V, 0.0185% +Tol, 0.0185% -Tol, C0G, -/+30ppm/Cel TC, 0.0027uF, 1206,

12063A272DA72A规格参数

参数名称属性值
是否Rohs认证不符合
Objectid803556027
包装说明, 1206
Reach Compliance Codecompliant
ECCN代码EAR99
YTEOL7.68
电容0.0027 µF
电容器类型CERAMIC CAPACITOR
介电材料CERAMIC
高度0.94 mm
JESD-609代码e4
长度3.2 mm
安装特点SURFACE MOUNT
多层Yes
负容差0.0185%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式SMT
包装方法TR, 7 Inch
正容差0.0185%
额定(直流)电压(URdc)25 V
尺寸代码1206
表面贴装YES
温度特性代码C0G
温度系数30ppm/Cel ppm/°C
端子面层Gold (Au)
端子形状WRAPAROUND
宽度1.6 mm

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C0G (NP0) Dielectric
General Specifications
C0G (NP0) is the most popular formulation of the “tempera-
ture-compensating,” EIA Class I ceramic materials. Modern
C0G (NP0) formulations contain neodymium, samarium and
other rare earth oxides.
C0G (NP0) ceramics offer one of the most stable capacitor
dielectrics available. Capacitance change with temperature
is 0 ±30ppm/°C which is less than ±0.3%
C from -55°C
to +125°C. Capacitance drift or hysteresis for C0G (NP0)
ceramics is negligible at less than ±0.05% versus up to
±2% for films. Typical capacitance change with life is less
than ±0.1% for C0G (NP0), one-fifth that shown by most
other dielectrics. C0G (NP0) formulations show no aging
characteristics.
The C0G (NP0) formulation usually has a “Q” in excess
of 1000 and shows little capacitance or “Q” changes with
frequency. Their dielectric absorption is typically less than
0.6% which is similar to mica and most films.
PART NUMBER (see page 2 for complete part number explanation)
0805
Size
(L" x W")
5
Voltage
6.3V = 6
10V = Z
16V = Y
25V = 3
50V = 5
100V = 1
200V = 2
A
Dielectric
C0G (NP0) = A
101
J
A
Failure
Rate
A = Not
Applicable
T
2
A
Special
Code
A = Std.
Product
Capacitance Capacitance
Code (In pF)
Tolerance
2 Sig. Digits +
B = ±.10 pF
Number of
C = ±.25 pF
Zeros
D = ±.50 pF
Terminations
Packaging
2 = 7" Reel
T = Plated Ni
4 = 13" Reel
and Sn
7 = Gold Plated 7 = Bulk Cass.
9 = Bulk
F
G
J
K
=
=
=
=
±1% (≥ 25 pF)
±2% (≥ 13 pF)
±5%
±10%
Contact
Contact
Factory For
Factory
1 = Pd/Ag Term
For
Multiples
Insulation Resistance (Ohm-Farads)
Temperature Coefficient
Typical Capacitance Change
Envelope: 0
±
30 ppm/°C
Capacitance vs. Frequency
+2
Insulation Resistance vs Temperature
10,000
Capacitance
Capacitance
+1
0
-1
-2
1,000
+0.5
0
-0.5
100
%
%
-55 -35 -15 +5 +25 +45 +65 +85 +105 +125
1KHz
10 KHz
100 KHz
1 MHz
10 MHz
0
0
20
40
60
80
100
Temperature
°C
Variation of Impedance with Cap Value
Impedance vs. Frequency
0805 - C0G (NP0)
10 pF vs. 100 pF vs. 1000 pF
100,000
Frequency
Variation of Impedance with Chip Size
Impedance vs. Frequency
1000 pF - C0G (NP0)
10
1206
0805
1812
1210
1.0
10.00
Temperature
°C
Variation of Impedance with Ceramic Formulation
Impedance vs. Frequency
1000 pF - C0G (NP0) vs X7R
0805
X7R
NPO
10,000
100
10.0
10 pF
Impedance,
1000
Impedance,
1,000
Impedance,
1.00
0.10
1.0
0.1
1
10
100
100 pF
1000 pF
1000
0.1
10
100
Frequency, MHz
0.01
10
100
1000
Frequency, MHz
Frequency, MHz
4

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