BFR180
NPN Silicon RF Transistor
For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
f
T
= 7 GHz
F
= 2.1 dB at 900 MHz
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
2
1
VPS05161
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFR180
Maximum Ratings
Parameter
Marking
RDs
1=B
Pin Configuration
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
Package
SOT23
Value
8
10
10
2
4
0.5
30
150
-65 ... 150
-65 ... 150
mW
°C
mA
Unit
V
3=C
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
127 °C
1)
P
tot
T
j
T
A
T
stg
780
K/W
1
Jun-27-2001
BFR180
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 1 mA,
V
CE
= 5 V
h
FE
30
100
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
8
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Jun-27-2001
BFR180
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 3 mA,
V
CE
= 5 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 1 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 1 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
,
-
-
8
5.5
-
-
I
C
= 1 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
-
-
13.5
10.5
-
-
G
ms
-
-
2.1
2.25
-
-
F
C
eb
-
0.1
-
C
ce
-
0.18
-
C
cb
-
0.25
0.4
f
T
5
7
-
typ.
max.
Unit
GHz
pF
dB
1
G
ms
= |
S
21
/
S
12
|
3
Jun-27-2001
BFR180
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.18519
26.867
1.9818
3.2134
1.6195
60
3.2473
14.866
1.0202
1.1812
2.2648
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
94.687
0.025252
20.325
0.012138
1.4255
3.7045
1.1812
0.3062
0
0.30423
0
0
0.87906
-
A
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0236
130.93
0.93013
6.1852
0.01
0.56
0.41827
0.22023
183.69
0.08334
0.75
1.11
300
-
fA
-
fA
mA
-
V
-
deg
-
fF
-
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.85
0.51
0.69
0.61
0
0.49
73
84
165
fF
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-27-2001
nH
nH
nH
nH
nH
nH
fF
BFR180
Total power dissipation
P
tot
=
f
(T
S
)
40
mW
30
T
S
P
tot
25
20
15
10
5
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
1
P
totmax
/ P
totDC
K/W
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
2 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Jun-27-2001
stm32/stm8
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