Internally synchronized output buffer enable eliminates the
need to control
OE
Single R/W (READ/WRITE) control pin
4-word burst capability (Interleaved or linear)
Individual byte write (BW
1
-
BW
4
) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%)
User selectable 3.3V (±5%) or 2.5V (±5%) I/O Supply (V
DDQ
)
Packaged in a JEDEC standard 100-lead plastic thin
quad flatpack (TQFP) and 119-lead ball grid array (BGA).
Description
The IDT71V657/59 are 3.3V high-speed 9,437,184-bit
(9 Megabit) synchronous SRAMs organized as 256K x 36 / 512K x
18. They are designed to eliminate dead bus cycles when turning the
bus around between reads and writes, or writes and reads. Thus
they have been given the name ZBT
TM
, or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock
cycle, and on the next clock cycle the associated data cycle occurs, be
it read or write.
The IDT71V657/59 contain address, data-in and control signal
registers. The outputs are flow-through (no output data register). Output
enable is the only asynchronous signal and can be used to disable the
outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V657/59
to be suspended as long as necessary. All synchronous inputs are
ignored when (CEN) is high and the internal device registers will hold their
previous values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three are
not asserted when ADV/LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will be
completed. The data bus will tri-state one cycle after chip is deselected or
a write is initiated.
The IDT71V657/59 have an on-chip burst counter. In the burst
mode, the IDT71V657/59 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO
input pin. The
LBO
pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
external address (ADV/LD = LOW) or increment the internal burst counter
(ADV/LD = HIGH).
The IDT71V657/59 SRAMs utilize IDTs latest high-performance
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm
100-lead plastic thin quad flatpack (TQFP) as well as a 119-lead ball
grid array (BGA).
Pin Description Summary
A
0
-A
18
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/LD
LBO
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
Synchronous
Static
Static
5001 tbl 01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
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