DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D168
BZG03 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Jun 07
2002 Jul 04
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Zener working voltage range:
10 to 270 V for 35 types
•
Supplied in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
BZG03 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,,
,,
,,
k
cathode
band
a
Top view
Side view
MSA473
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
tot
P
tot
P
ZSM
T
stg
T
j
PARAMETER
total power dissipation
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
T
tp
= 100
°C;
see Fig.2
T
amb
= 50
°C;
see Fig.2; device
mounted on an Al
2
O
3
PCB (see Fig.5)
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Fig.3
MIN.
−
−
−
−65
−65
MAX.
3.00
1.25
600
+175
+175
UNIT
W
W
W
°C
°C
2002 Jul 04
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.5 A; see Fig.4
BZG03 series
MAX.
1.2
V
UNIT
Per type
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
MAX.
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
DIFFERENTIAL
RESISTANCE
r
dif
(Ω) at I
Z
TYP.
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
MAX.
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
TEMPERATURE
TEST
COEFFICIENT CURRENT
S
Z
(%/K) at I
Z
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
C130
C150
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
2002 Jul 04
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZG03 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
160
180
200
220
240
270
MAX.
171
191
212
233
256
289
DIFFERENTIAL
RESISTANCE
r
dif
(Ω) at I
Z
TYP.
150
180
200
350
400
450
MAX.
350
400
500
750
850
1000
TEMPERATURE
TEST
COEFFICIENT CURRENT
S
Z
(%/K) at I
Z
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
5
5
5
2
2
2
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
V
R
(V)
120
130
150
160
180
200
C160
C180
C200
C220
C240
C270
Note
153
168
188
208
228
251
1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.5.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
2002 Jul 04
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
BZG03 series
handbook, halfpage
4
MBH451
10
4
handbook, halfpage
PZSM
(W)
10
3
MBH452
Ptot
(W)
3
2
10
2
1
0
0
100
T (°C)
200
10
10
−2
10
−1
1
tp (ms)
10
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
PCB
as shown in Fig.5.
T
j
= 25
°C
prior to surge.
Fig.3
Fig.2
Maximum total power dissipation as a
function of temperature.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
3
MBH453
50
IF
(A)
2
4.5
50
1
2.5
0
0
1
VF (V)
2
1.25
MSB213
T
j
= 25
°C.
Dimensions in mm.
Fig.4
Forward current as a function of forward
voltage; typical values.
Fig.5 Printed-circuit board for surface mounting.
2002 Jul 04
5
FPGA/CPLD
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