BZX384-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according
to the international E 24 standard
• Standard Zener voltage tolerance is ± 5 %;
Replace "C" with "B" for ± 2 % tolerance
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD-323
Weight:
approx. 5.0 mg
Packaging codes/options:
18/10 k per 13" reel (8 mm tape), 10 k/box
08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Test condition
Symbol
P
tot
Value
200
1)
Unit
mW
Device on fiberglass substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
650
1)
150
- 65 to + 150
Unit
K/W
°C
°C
Valid that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 83335
Rev. 1.0, 25-May-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
1
BZX384-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
Part number
Marking
code
V
Z
at I
ZT1
V
min
BZX384C2V4-V-G
BZX384C2V7-V-G
BZX384C3V0-V-G
BZX384C3V3-V-G
BZX384C3V6-V-G
BZX384C3V9-V-G
BZX384C4V3-V-G
BZX384C4V7-V-G
BZX384C5V1-V-G
BZX384C5V6-V-G
BZX384C6V2-V-G
BZX384C6V8-V-G
BZX384C7V5-V-G
BZX384C8V2-V-G
BZX384C9V1-V-G
BZX384C10-V-G
BZX384C11-V-G
BZX384C12-V-G
BZX384C13-V-G
BZX384C15-V-G
BZX384C16-V-G
BZX384C18-V-G
BZX384C20-V-G
BZX384C22-V-G
BZX384C24-V-G
BZX384C27-V-G
BZX384C30-V-G
BZX384C33-V-G
BZX384C36-V-G
BZX384C39-V-G
BZX384C43-V-G
BZX384C47-V-G
BZX384C51-V-G
BZX384C56-V-G
BZX384C62-V-G
BZX384C68-V-G
BZX384C75-V-G
(1)
Dynamic resistance
r
zj
at I
ZT1
Ω
typ
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
r
zj
at I
ZT2
Ω
typ
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
Test
current
I
ZT1
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Temperature
coefficient of
zener voltage
α
VZ
at I
ZT1
10
-4
/°C
min
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
max
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Test
current
at I
ZT2
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse leakage
current
I
R
at V
R
µA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
YA
YB
YC
YD
YE
YF
YG
YH
YI
YK
YL
YM
YN
YO
YP
YR
YS
YT
YU
YW
YX
YY
YZ
Z1
Z2
Z3
Z4
Z5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Measured with pulses t
p
= 5 ms
www.vishay.com
2
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 83335
Rev. 1.0, 25-May-10
BZX384-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range
Part number
Marking
code
V
Z
at I
ZT1
V
min
BZX384B2V4-V-G
BZX384B2V7-V-G
BZX384B3V0-V-G
BZX384B3V3-V-G
BZX384B3V6-V-G
BZX384B3V9-V-G
BZX384B4V3-V-G
BZX384B4V7-V-G
BZX384B5V1-V-G
BZX384B5V6-V-G
BZX384B6V2-V-G
BZX384B6V8-V-G
BZX384B7V5-V-G
BZX384B8V2-V-G
BZX384B9V1-V-G
BZX384B10-V-G
BZX384B11-V-G
BZX384B12-V-G
BZX384B13-V-G
BZX384B15-V-G
BZX384B16-V-G
BZX384B18-V-G
BZX384B20-V-G
BZX384B22-V-G
BZX384B24-V-G
BZX384B27-V-G
BZX384B30-V-G
BZX384B33-V-G
BZX384B36-V-G
BZX384B39-V-G
BZX384B43-V-G
BZX384B47-V-G
BZX384B51-V-G
BZX384B56-V-G
BZX384B62-V-G
BZX384B68-V-G
BZX384B75-V-G
C1
C2
C3
C4
C5
C6
C7
C8
C9
CA
CB
CC
CD
CE
CF
CG
CH
CI
CK
CL
CM
CN
CO
CP
CR
CS
CT
CU
CW
CX
CY
CZ
D1
D2
D3
D4
D5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
Dynamic resistance
r
zj
at I
ZT1
Ω
typ
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
r
zj
at I
ZT2
Ω
typ
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Test
current
I
ZT1
mA
Temperature
coefficient of
zener voltage
α
VZ
at I
ZT1
10
-4
/°C
min
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
max
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
Test
current
atI
ZT2
mA
µA
Reverse leakage
current
I
R
at V
R
V
Document Number 83335
Rev. 1.0, 25-May-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
3
BZX384-V-G-Series
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
1000
5
4
3
2
T
J
= 25 °C
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
r
zj
100
5
4
3
2
T
J
= 25 °C
100
10
-3
10
-4
10
-5
5
4
3
2
2.7
3.6
4.7
5.1
5.6
1
0.2
0.4
0.6
0.8
1V
0
18114
0.1
18117
2
5
1
2
5
10
I
Z
2
5
100 mA
V
F
Figure 1. Forward Characteristics
Figure 4. Dynamic Resistance vs. Zener Current
mW
250
pF
1000
7
5
4
3
2
T
j
= 25 °C
200
C
tot
V
R
= 1
V
V
R
= 2
V
P
tot
150
100
100
7
5
4
V
R
= 1
V
V
R
= 2
V
50
3
2
0
0
18192
10
100
200 °C
1
18193
2
3
4 5
10
2
3 4 5
100
V
T
amb
V
Z
Figure 2. Admissible Power Dissipation vs.
Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C/W
10
3
7
5
4
3
2
Ω
100
T
J
= 25 °C
0.5
0.2
0.1
0.05
0.02
0.01
V
=0
5
4
R
thA
10
2
7
5
4
3
2
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
5
4
10
7
5
4
3
2
t
p
t
p
T
T
3
P
I
2
1
10
-5
18116
1
10
-4
10
-3
10
-2
10
-1
1
10s
0.1
18119
2
5
1
2
5
t
p
10
I
Z
2
5
100 mA
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
4
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 83335
Rev. 1.0, 25-May-10
BZX384-V-G-Series
Vishay Semiconductors
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
I
Z
=
5 mA
1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18135
2
3
4 5
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Ω
10
3
5
4
3
2
V
0.8
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
Δ
V
Z
25
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
Z
at I
Z
= 5 mA
15
10
R
zth
10
2
5
4
3
2
8
7
6.2
5.9
5.6
5.1
3.6
4.7
10
5
4
3
2
negative
positive
-1
- 0.2
2
3 4 5
1
1
18121
2
3
4 5
10
100
V
0
18124
20
40
60
80
100 120 140 C
V
Z
at I
Z
= 5 mA
T
j
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
7
5
4
V
9
8
7
V
Z
at I
Z
= 2 mA
51
R
zj
3
2
Δ
V
Z
6
5
10
7
5
4
3
2
4
3
2
1
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
43
36
0
-1
0
18194
1
10
2
I
Z
= 2 mA
20
40
60
80
100 120
140 °C
3 4 5
100
V
18122
V
Z
T
j
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Change of Zener Voltage vs. Junction Temperature
Document Number 83335
Rev. 1.0, 25-May-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
