SIR-34ST3F
Sensors
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency
and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
it ideal for compact optical control equipment.
!
Applications
Optical control equipment
Light source for remote control devices
!
External dimensions
(Units : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
Notes:
1.
Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
!
Features
1) Compact (φ3.1mm).
2) High efficiency, high output P
O
=8.0mW
(I
F
=50mA).
3) Wide radiation angle
θ=27°.
4) Emission spectrum well suited to silicon detectors
(λ
P
=950nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
2−
0.5
Min.24
2
1
(2.5)
2.5±1
Max.1
4−0.6
5.2±0.3
1.1
1 Anode
2 Cathode
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗
Pulse width=0.1msec, duty ratio 1%
Symbol
I
F
V
R
P
D
I
FP
∗
Topr
Tstg
Limits
100
5
160
1.0
−25~+85
−40~+85
Unit
mA
V
mW
A
°C
°C
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SIR-34ST3F
Sensors
!
Electrical and optical characteristics
(Ta = 25°C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
Symbol
P
O
I
E
V
F
I
R
Min.
−
3.5
−
−
−
−
−
−
−
Typ.
8.0
−
1.3
−
950
40
±27
1.0
1.0
Max.
−
28.0
1.6
10
−
−
−
−
−
Unit
mW
mW/sr
V
µA
nm
nm
deg
µs
MHz
I
F
=50mA
I
F
=50mA
I
F
=100mA
V
R
=3V
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Conditions
λ
P
∆λ
θ
1 / 2
tr·tf
f
C
!
Electrical and optical characteristic curves
100
FORWARD CURRENT : I
F
(mA)
50
100
FORWARD CURRENT : I
F
(mA)
−25°C
0°C
25°C
50°C
75°C
80
RELATIVE OPTICAL OUTPUT : P
O
(%)
80
40
60
60
30
40
20
40
20
10
0
0
20
0
0
20
40
60
80
100
1
FORWARD VOLTAGE : V
F
(V)
2
0
900
920
940
960
980
1000
AMBIENT TEMPERATURE : Ta (°C)
OPTICAL WAVELENGTH :
λ
(nm)
Fig.1 Forward current falloff
Fig.2 Forward current vs. forward voltage
Fig.3 Wavelength
RELATIVE EMITTING STRENGTH : I
E
(%)
50
EMITTING STRENGTH : I
E
(mW/sr)
200
40
100
30
50
20
10
20
0
0
20
40
60
80
100
10
−20
0
20
40
60
80
FORWARD CURRENT : I
F
(mA)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Emitting strength vs.
forward current
Fig.5 Relative emitting strength
vs.ambient temperature
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SIR-34ST3F
Sensors
RELATIVE EMITTING STRENGTH
(%)
20°
30°
40°
50°
60
60°
40
70°
80°
90°
100
20
80
10°
0°
100
80
60
40
20
0 10° 20° 30° 40° 50° 60° 70° 80° 90°
ANGULAR DISPLACEMENT :
θ
(deg)
RELATIVE EMITTING STRENGTH (%)
Fig.6 Directional pattern
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