Si3420DV
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
I
D
(A)
0.5
PRODUCT SUMMARY
V
DS
(V)
200
r
DS(on)
(W)
3.7 @ V
GS
= 10 V
D
100% R
g
Tested
TSOP-6
Top View
1
3 mm
6
5
(3) G
3
4
(1, 2, 5, 6) D
2
2.85 mm
(4) S
Ordering Information: Si3420DV-T1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
P
D
T
J
, T
stg
5 secs
200
"20
0.5
0.4
1
1
0.05
1
2.1
1.34
Steady State
Unit
V
0.37
0.29
A
mJ
A
1.14
0.73
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71097
S-31725—Rev. B, 18-Aug-03
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
35
Maximum
60
110
42
Unit
_C/W
C/W
1
Si3420DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.35 A
V
DS
= 15 V, I
D
= 1 A
I
S
= 1 A, V
GS
= 0 V
9
1.2
1
3.7
2.0
"100
1
25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1 A, di/dt = 100 A/ms
V
DD
= 100 V, R
L
= 100
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.5
7
8
10
30
140
V
DS
= 100 V, V
GS
= 10 V, I
D
= 0.5 A
2.2
0.65
0.95
2.5
12
13
15
50
225
ns
W
3.5
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0
V
GS
= 10 thru 8 V
1.5
I
D
- Drain Current (A)
I
D
- Drain Current (A)
7V
1.0
1.5
125_C
1.0
2.0
T
C
= - 55_C
25_C
Transfer Characteristics
6V
0.5
4V
0.0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
5V
0.5
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
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Document Number: 71097
S-31725—Rev. B, 18-Aug-03
Si3420DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
7
r
DS(on)
- On-Resistance (
W
)
6
C - Capacitance (pF)
5
4
V
GS
= 10 V
3
2
1
0
0.0
120
100
C
iss
80
60
40
C
oss
20
0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
C
rss
Capacitance
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 100 V
I
D
= 0.5 A
16
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 0.35 A
2.0
12
r
DS(on)
- On-Resistance (
W)
(Normalized)
2
3
4
1.5
8
1.0
4
0.5
0
0
1
Q
g
- Total Gate Charge (nC)
0.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
10
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
1
r
DS(on)
- On-Resistance (
W
)
T
J
= 150_C
8
I
D
= 0.35 A
6
0.1
T
J
= 25_C
0.01
4
2
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71097
S-31725—Rev. B, 18-Aug-03
www.vishay.com
3
Si3420DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.9
0.6
V
GS(th)
Variance (V)
I
D
= 250
mA
0.3
Power (W)
12
T
A
= 25_C
8
0.0
- 0.3
- 0.6
- 0.9
- 50
4
20
Single Pulse Power
16
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71097
S-31725—Rev. B, 18-Aug-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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