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HMC930

产品描述IC mmic power amp die 1=2pcs
产品类别无线/射频/通信    射频和微波   
文件大小518KB,共10页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
标准
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HMC930概述

IC mmic power amp die 1=2pcs

HMC930规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Hittite Microwave(ADI)
包装说明DIE OR CHIP
Reach Compliance Codeunknown
ECCN代码3A001.B.2.D
特性阻抗50 Ω
构造COMPONENT
增益10 dB
最大输入功率 (CW)17 dBm
JESD-609代码e4
功能数量1
最大工作频率40000 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-55 °C
封装等效代码DIE OR CHIP
电源10 V
射频/微波设备类型WIDE BAND MEDIUM POWER
技术GAAS
端子面层Gold (Au)
最大电压驻波比7

文档预览

下载PDF文档
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Features
high p1dB output power: 22 dBm
high psat output power: 24 dBm
high Gain: 13 dB
high output ip3: 33.5 dBm
supply Voltage: +10 V @ 175 mA
50 ohm matched input/output
Die size: 2.82 x 1.50 x 0.1 mm
Typical Applications
The hmC930 is ideal for:
• Test instrumentation
• microwave radio & VsAT
• military & space
• Telecom infrastructure
3
Amplifiers - lineAr & power - Chip
• fiber optics
Functional Diagram
General Description
The hmC930 is a GaAs mmiC phemT Distrib-
uted power Amplifier which operates between DC
and 40 Ghz. The amplifier provides 13 dB of gain,
33.5 dBm output ip3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The hmC930 exhibits a slightly
positive gain slope from 8 to 32 Ghz, making it
ideal for ew, eCm, radar and test equipment
applications. The hmC930 amplifier i/os are inter-
nally matched to 50 ohms facilitating integra-
tion into mutli-Chip-modules (mCms). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA*
parameter
frequency range
Gain
Gain flatness
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current
(idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
21
11.5
min.
Typ.
DC - 12
13.5
±0.5
0.01
18
28
23
25
36
4.5
175
20
11
max.
min.
Typ.
12 - 32
13
±0.3
0.017
16
20
22
24
33.5
5
175
18
10
max.
min.
Typ.
32 - 40
12
±1.0
0.032
15
20
20
23
29
7.5
175
max.
Units
Ghz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com

 
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