MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Features
♦
♦
♦
♦
♦
♦
♦
♦
Low Series Resistance
Ultra Low Capacitance
Millimeter Wave Switching & Cutoff Frequency
2 Nanosecond Switching Speed
Can be Driven by a Buffered TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
V4
Chip Dimensions
MA4AGP907 and MA4AGFCP910
Description
M/A-COM Technology Solutions MA4AGP907 and
MA4AGFCP910 are Aluminum Gallium Arsenide
(AlGaAs) flip-chip PIN diodes. These devices are
fabricated on OMCVD epitaxial wafers using a process
optimized for high device uniformity and exceptionally
low parasitics. The end result is a diode with an
extremely low RC product, (0.1ps) and 2-3nS
switching characteristics. They are fully passivated
with silicon nitride and have an added polymer layer
for scratch protection. The protective coating prevents
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 make them ideal for RF switch and
phase shifter applications through millimeter wave
frequencies. The diodes are designed for use in
pulsed or CW applications, where single digit nS
switching speed is required. The low capacitance of
these diodes make them ideal for use in microwave
multi-throw switch assemblies, where the series
capacitance of each “off” port adversely loads the input
and affects VSWR.
Notes:
1. Gold Pads 14µM thick.
2. Yellow areas indicate ohmic gold mounting pads.
3. Dimensions A thru F are identical for both devices
INCHES
DIM
A
B
C
D
E
F
MIN.
0.0260
0.0135
0.0065
0.0043
0.0068
0.0182
MAX.
0.0270
0.0145
0.0075
0.0053
0.0073
0.0192
MIN.
0.6604
0.3429
0.1651
0.1092
0.1727
0.4623
MM
MAX.
0.6858
0.3683
0.1905
0.1346
0.1854
0.4877
Absolute Maximum Ratings T
AMB
= +25°C
(unless otherwise specified)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated Power (RF & DC )
C.W. Incident Power
Mounting Temperature
Absolute Maximum
MA4AGP907 -50V
MA4AGFCP910 -75V
-55°C to +125°C
-55°C to +150°C
+175°C
50mW
+23 dBm
+280°C for 10 seconds
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Electrical Specifications @ T
AMB
= +25°C
MA4AGP907
MA4AGFCP910
Typ.
0.018
Max.
0.021
V4
Parameter
Symbol
Conditions
MA4AGP907 -5V,1MHz
Units
Typ.
Max.
0.030
Total Capacitance
C
T
MA4AGFCP910 -10V,1MHz
pF
0.025
Total Capacitance
1
Series Resistance
C
T
R
S
R
S
-5V, 10GHz
+10mA, 1MHz
pF
Ω
0.020
5.2
——
7.0
0.018
——
0.021
——
Series Resistance
2
+10mA, 10GHz
Ω
4.2
——
5.2
6.0
Forward Voltage
V
F
+10mA
MA4AGP907
V
R
= -
50V
MA4AGFCP910
V
R
= -
75V
10GHz
V
1.33
1.45
1.33
1.45
Reverse Leakage Current
3
I
R
T
RISE
T
FALL
T
L
μA
——
10
——
10
Switching Speed
4
nS
2
——
2
——
Carrier Lifetime
I
F
= 10mA / I
REV
= 6mA
nS
——
——
4
——
Notes:
1) Capacitance is determined by measuring the isolation of a single series diode in a 50Ω transmission
line at 10GHz.
2) Series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω
transmission line at 10GHz.
3) The max rated V
R
( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is
measured to be <10μA
4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series
mounted diode. Driver delay is not included.
2
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Typical RF Performance @ T
AMB
= +25°C
MA4AGP907
Typical Insertion Loss vs. Frequency
I. Loss @5mA
I. Loss @15mA
I. Loss @50mA
V4
0.0
Insertion Loss
(dB)
Insertion Loss
(dB)
-0.2
-0.4
-0.6
-0.8
2
4
6
8
10
12
14
16
18 20 22 24
Frequency (GHz)
Frequency (GHz)
26
28
30
32
34
36
38
40
M A4AGFCP910
Typical Insertion Loss vs. Frequency
0.0
5mA
10mA
15mA
-0.2
Insertion Loss (dB)
15 m A
10 m A
5 mA
L s (d )
os B
-0.4
-0.6
-0.8
2
10
18
Frequency (GHz)
Frequency (GHz)
26
34
42
50
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Typical RF Performance @ T
AMB
= +25°C
V4
MA4AGP907
Typical return Loss vs. Frequency ( Either Port )
R. Loss @5mA
R. Loss @15mA
R. Loss @50mA
-20.0
-22.0
-24.0
R tu L s (d )
e rn o s B
-26.0
-28.0
-30.0
-32.0
-34.0
-36.0
-38.0
2
3
4
5
6
7
8
9
1
0
1
1
1
2
1
3
1
4
1
5
50
-40.0
Frequency (GHz)
M A4AGFCP910
Typical Return Loss vs. Frequency ( Either Port Direction )
0
5mA
-5
10mA
15mA
Return Loss (dB)
-10
15 m A
10 m A
5 mA
Rt r L s ( B
eu n o s d )
-15
-20
-25
-30
-35
2
10
18
26
34
42
Frequency (GHz)
Frequency (GHz)
4
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
Frequency (Hz)
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
MA4AGP907
MA4AGFCP910
AlGaAs Flip Chip PIN Diodes
Typical RF Performance @ T
AMB
= +25°C
MA4AGP907
Typical Isolation vs. Frequency
V4
Isolation @ -10V
-5.0
Isolation @ 0V
Isolation @ -1V
-10.0
Iso
latio (dB
n
)
-15.0
-20.0
-25.0
-30.0
-35.0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
50
Frequency (GHz)
MA4AGFCP910
Typical Isolation vs Frequency
0
-5
Isolation Loss (dB)
-10
Isolation (d )
B
-15
-20
-25
0V
5V
-30
-35
2
10
18
26
34
42
Frequency (GHz)
Frequency (GHz)
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
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