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5962F9863101VXC: 产品描述8-INPUT NAND GATE, CDFP14, CERAMIC, DFP-14; 产品类别逻辑逻辑; 文件大小38KB，共2页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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5962F9863101VXC概述

8-INPUT NAND GATE, CDFP14, CERAMIC, DFP-14

5962F9863101VXC规格参数

参数名称	属性值
是否Rohs认证	不符合
零件包装代码	DFP
包装说明	DFP, FL14,.3
针数	14
Reach Compliance Code	not_compliant
JESD-30 代码	R-CDFP-F14
JESD-609代码	e0
负载电容（CL）	50 pF
逻辑集成电路类型	NAND GATE
最大I（ol）	0.008 A
功能数量	1
输入次数	8
端子数量	14
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP
封装等效代码	FL14,.3
封装形状	RECTANGULAR
封装形式	FLATPACK
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
Prop。Delay @ Nom-Sup	16 ns
传播延迟（tpd）	16 ns
认证状态	Not Qualified
施密特触发器	NO
筛选级别	38535V;38534K;883S
座面最大高度	2.92 mm
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn/Pb)
端子形式	FLAT
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
总剂量	300k Rad(Si) V
宽度	6.285 mm
Base Number Matches	1

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ACS30MS

Data Sheet

July 1999

File Number

4759

Radiation Hardened 8-Input NAND Gate

The Radiation Hardened ACS30MS is an 8-Input NAND

Gate. A HIGH level on all inputs results in a LOW level on

the Y output. A LOW level on any input results in a HIGH

level on the Y output. All inputs are buffered and the

outputs are designed for balanced propagation delay and

transition times.

The ACS30MS is fabricated on a CMOS Silicon on

Sapphire (SOS) process, which provides an immunity to

Single Event Latch-up and the capability of highly reliable

performance in any radiation environment. These devices

offer significant power reduction and faster performance

when compared to ALSTTL types.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed below must be used when ordering.

Detailed Electrical Speciﬁcations for the ACS30MS are

contained in SMD 5962-98631. A “hot-link” is provided

on our homepage for downloading.

http://www.intersil.com/spacedefense/spaceselect.htm

Features

• QML Qualiﬁed Per MIL-PRF-38535 Requirements

• 1.25 Micron Radiation Hardened SOS CMOS

• Radiation Environment

- Latch-Up Free Under Any Conditions

- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10

RAD(Si)

- SEU Immunity . . . . . . . . . . . . . <1 x 10

-10

Errors/Bit/Day

- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm

)

• Input Logic Levels. . . . V

= (0.3)(V

), V

= (0.7)(V

)

• Output Current

. . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA

(Min)

• Quiescent Supply Current . . . . . . . . . . . . . . . 5.0µA (Max)

• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 16ns (Max)

Applications

• High Speed Control Circuits

• Sensor Monitoring

• Low Power Designs

Ordering Information

ORDERING NUMBER

5962F9863101VCC

ACS21D/SAMPLE-03

5962F9863101VXC

ACS21K/SAMPLE-03

5962F9863101V9A

INTERNAL MARKETING

NUMBER

ACS30DMSR-03

ACS30D/SAMPLE-03

ACS30KMSR-03

ACS30K/SAMPLE-03

ACS30HMSR-03

TEMP. RANGE (

-55 to 125

PACKAGE

14 Ld SBDIP

14 Ld Flatpack

Die

DESIGNATOR

CDIP2-T14

CDFP3-F14

Pinouts

ACS30MS

(SBDIP)

TOP VIEW

A 1

B 2

C 3

D 4

E 5

F 6

GND 7

14 V

13 NC

12 H

11 G

10 NC

9 NC

8 Y

ACS30MS

(FLATPACK)

TOP VIEW

GND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

5962F9863101VXC相似产品对比

	5962F9863101VXC	5962F9863101V9A	ACS30KMSR-03	ACS30DMSR-03	ACS30HMSR-03	5962F9863101VCC
描述	8-INPUT NAND GATE, CDFP14, CERAMIC, DFP-14	8-INPUT NAND GATE, UUC11, 0.094 X 0.094 INCH, DIE-11	8-INPUT NAND GATE, CDFP14, CERAMIC, DFP-14	8-INPUT NAND GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14	8-INPUT NAND GATE, UUC11, 0.094 X 0.094 INCH, DIE-11	8-INPUT NAND GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14
零件包装代码	DFP	DIE	DFP	DIP	DIE	DIP
包装说明	DFP, FL14,.3	DIE,	DFP,	DIP,	DIE,	DIP, DIP14,.3
针数	14	11	14	14	11	14
Reach Compliance Code	not_compliant	unknown	unknown	unknown	unknown	not_compliant
JESD-30 代码	R-CDFP-F14	S-XUUC-N11	R-CDFP-F14	R-CDIP-T14	S-XUUC-N11	R-CDIP-T14
逻辑集成电路类型	NAND GATE	NAND GATE	NAND GATE	NAND GATE	NAND GATE	NAND GATE
功能数量	1	1	1	1	1	1
输入次数	8	8	8	8	8	8
端子数量	14	11	14	14	11	14
封装主体材料	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP	DIE	DFP	DIP	DIE	DIP
封装形状	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR
封装形式	FLATPACK	UNCASED CHIP	FLATPACK	IN-LINE	UNCASED CHIP	IN-LINE
传播延迟（tpd）	16 ns	16 ns	16 ns	16 ns	16 ns	16 ns
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	NO	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	FLAT	NO LEAD	FLAT	THROUGH-HOLE	NO LEAD	THROUGH-HOLE
端子位置	DUAL	UPPER	DUAL	DUAL	UPPER	DUAL
最高工作温度	125 °C	-	125 °C	125 °C	-	125 °C
最低工作温度	-55 °C	-	-55 °C	-55 °C	-	-55 °C
座面最大高度	2.92 mm	-	2.92 mm	5.08 mm	-	5.08 mm
温度等级	MILITARY	-	MILITARY	MILITARY	-	MILITARY
端子节距	1.27 mm	-	1.27 mm	2.54 mm	-	2.54 mm
宽度	6.285 mm	-	6.285 mm	7.62 mm	-	7.62 mm
Base Number Matches	1	1	1	1	1	-

5962F9863101VXC

5962F9863101VXC概述

5962F9863101VXC规格参数

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