CAT660
100 mA CMOS Charge Pump
Inverter/Doubler
Description
The CAT660 is a charge−pump voltage converter. It will invert a
1.5 V to 5.5 V input to a
−1.5
V to
−5.5
V output. Only two external
capacitors are needed. With a guaranteed 100 mA output current
capability, the CAT660 can replace a switching regulator and its
inductor. Lower EMI is achieved due to the absence of an inductor.
In addition, the CAT660 can double a voltage supplied from a
battery or power supply. Inputs from 2.5 V to 5.5 V will yield a
doubled, 5 V to 11 V output voltage.
A Frequency Control pin (BOOST/FC) is provided to select either a
high (80 kHz) or low (10 kHz) internal oscillator frequency, thus
allowing quiescent current vs. capacitor size trade−offs to be made.
The 80 kHz frequency is selected when the FC pin is connected to V+.
The operating frequency can also be adjusted with an external
capacitor at the OSC pin or by driving OSC with an external clock.
8−pin SOIC package is available in the industrial temperature range.
The CAT660 replaces the MAX660 and the LTC®660. In addition,
the CAT660 is pin compatible with the 7660/1044, offering an easy
upgrade for applications with 100 mA loads.
Features
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SOIC−8
V SUFFIX
CASE 751BD
PIN CONFIGURATION
BOOST/FC
CAP+
GND
CAP−
(Top View)
1
V+
OSC
LV
OUT
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Replaces MAX660 and LTC®660
Converts V+ to V− or V+ to 2V+
Low Output Resistance, 4
W
Typical
High Power Efficiency
Selectable Charge Pump Frequency
−
10 kHz or 80 kHz
−
Optimize Capacitor Size
Low Quiescent Current
Pin−compatible, High−current Alternative to 7660/1044
Industrial Temperature Range
Available in 8−pin SOIC Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Negative Voltage Generator
Voltage Doubler
Voltage Splitter
Low EMI Power Source
GaAs FET Biasing
Lithium Battery Power Supply
Instrumentation
LCD Contrast Bias
Cellular Phones, Pagers
MARKING DIAGRAMS
CAT660EVA
CAT660EVA = CAT660EVA−GT3
ORDERING INFORMATION
Device
CAT660EVA−GT3
Package
SOIC−8
(Pb−Free)
Shipping
3,000 /
Tape & Reel
Applications
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1. All packages are RoHS−compliant (Lead−free,
Halogen−free).
2. For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
3. For detailed information and a breakdown of
device nomenclature and numbering systems,
please see the ON Semiconductor Device No-
menclature document, TND310/D, available at
www.onsemi.com
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 26
1
Publication Order Number:
CAT660/D
CAT660
Typical Application
+V
IN
1.5 V to 5.5 V
1
2
C1 +
1
mF
to
150
mF
3
4
BOOST/FC
CAP+
GND
CAP−
CAT660
V+
OSC
LV
OUT
8
7
6
5
C2
Inverted
Negative
Voltage
Output
1
mF
to
150
mF
1
mF
to
150
mF
C1
1
+
2
3
4
BOOST/FC
CAP+
GND
CAP−
CAT660
V+
OSC
LV
OUT
8
7
6
5
Doubled
Positive
Voltage
C2 Output
1
mF
to
150
mF
V
IN
= 2.5 V
to 5.5 V
Figure 1. Voltage Inverter
Table 1. PIN DESCRIPTIONS
Figure 2. Positive Voltage Doubler
Circuit Configuration
Pin Number
1
Name
Boost/FC
Inverter Mode
Frequency Control for the internal oscillator. With an external
oscillator BOOST/FC has no effect.
Boost/FC
Open
V+
2
3
4
5
6
CAP+
GND
CAP−
OUT
LV
Oscillator Frequency
10 kHz typical, 5 kHz minimum
80 kHz typical, 40 kHz minimum
Same as inverter.
Power supply. Positive voltage input.
Same as inverter.
Power supply ground.
LV must be tied to OUT for all input
voltages.
Doubler Mode
Same as inverter.
Charge pump capacitor. Positive terminal.
Power supply ground.
Charge pump capacitor. Negative terminal.
Output for negative voltage.
Low−Voltage selection pin. When the input voltage is less
than 3 V, connect LV to GND. For input voltages above 3 V,
LV may be connected to GND or left open. If OSC is driven
externally, connect LV to GND.
Oscillator control input. An external capacitor can be connec-
ted to lower the oscillator frequency. An external oscillator
can drive OSC and set the chip operating frequency. The
charge−pump frequency is one−half the frequency at OSC.
Power supply. Positive voltage input.
7
OSC
Same as inverter. Do not overdrive OSC
in doubling mode. Standard logic levels
will not be suitable. See the applications
section for additional information.
Positive voltage output.
8
V+
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2
CAT660
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
V+ to GND
Input Voltage (Pins 1, 6 and 7)
BOOST/FC and OSC Input Voltage
Output Short−circuit Duration to GND
(OUT may be shorted to GND for 1 sec without damage but shorting OUT
to V+ should be avoided.)
Continuous Power Dissipation (T
A
= 70°C)
Plastic DIP
SOIC
TDFN
Storage Temperature
Lead Soldering Temperature (10 sec)
Operating Ambient Temperature Range
Ratings
6
−0.3
to (V+ + 0.3)
The least negative of (Out
−
0.3 V) or
(V+
−
6 V) to (V+ + 0.3 V)
1
Units
V
V
V
sec.
730
500
1
−65
to +160
300
−40
to +85
mW
mW
W
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: T
A
= Ambient Temperature
Table 3. ELECTRICAL CHARACTERISTICS
(V+ = 5 V, C1 = C2 = 150
mF,
Boost/FC = Open, C
OSC
= 0 pF, inverter mode with test
circuit as shown in Figure 3 unless otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.)
Parameter
Supply Voltage
Symbol
VS
Conditions
Inverter: LV = Open, R
L
= 1 kW
Inverter: LV = GND, R
L
= 1 kW
Doubler: LV = OUT, R
L
= 1 kW
Supply Current
IS
BOOST/FC = open, LV = Open
BOOST/FC = V+, LV = Open
Output Current
Output Resistance
IOUT
RO
OUT is more negative than
−4
V
I
L
= 100 mA, C1 = C2 = 150
mF
(Note 5)
BOOST/FC = V+ (C1, C2 ESR
≤
0.5
W)
I
L
= 100 mA, C1 = C2 = 10
mF
Oscillator Frequency
(Note 6)
OSC Input
Current
Power Efficiency
FOSC
BOOST/FC = Open
BOOST/FC = V+
IOSC
PE
BOOST/FC = Open
BOOST/FC = V+
R
L
= 1 kW connected between V+ and OUT,
T
A
= 25°C (Doubler)
R
L
= 500
W
connected between GND and OUT,
T
A
= 25°C (Inverter)
I
L
= 100 mA to GND, T
A
= 25°C (Inverter)
Voltage Conversion
Efficiency
VEFF
No load, T
A
= 25°C
99
96
92
5
40
10
80
±1
±5
98
96
88
99.9
%
mA
%
100
4
7
12
kHz
Min
3.0
1.5
2.5
0.09
0.3
Typ
Max
5.5
5.5
5.5
0.5
3
mA
W
mA
Units
V
4. In Figure 3, test circuit capacitors C1 and C2 are 150
mF
and have 0.2
W
maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
5. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2
W.
6. FOSC is tested with C
OSC
= 100 pF to minimize test fixture loading. The test is correlated back to C
OSC
= 0 pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external C
OSC
.
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3
CAT660
Voltage Inverter
CAT660
V
+
1
2
+
C
1
150
mF
3
4
BOOST/FC
CAP+
GND
CAP−
V+
OSC
LV
OUT
8
7
6
5
C2
150
mF
I
S
V
+
5V
External
Oscillator
C
OSC
R
L
I
L
V
OUT
+
Figure 3. Test Circuit
(Typical characteristic curves are generated using the test circuit in Figure 3. Inverter test conditions are: V+ = 5 V, LV = GND, BOOST/FC
= Open and T
A
= 25°C unless otherwise indicated. Note that the charge−pump frequency is one−half the oscillator frequency.)
150
120
90
No Load
60
30
0
120
100
INPUT CURRENT (mA)
80
60
40
20
0
−50
VIN = 5 V
TYPICAL OPERATING CHARACTERISTICS
INPUT CURRENT (mA)
VIN = 3 V
VIN = 2 V
1
2
3
4
5
6
−25
0
25
50
75
100
125
INPUT VOLTAGE (V)
TEMPERATURE (°C)
Figure 4. Supply Current vs. Input Voltage
10
OUTPUT RESISTANCE (W)
8
6
100
W
Load
4
2
0
OUTPUT RESISTANCE (W)
8
7
6
5
4
3
2
−50
Figure 5. Supply Current vs. Temperature
(No Load)
VIN = 2 V
VIN = 3 V
VIN = 5 V
1
2
3
4
5
6
−25
0
25
50
75
100
125
INPUT VOLTAGE (V)
TEMPERATURE (°C)
Figure 6. Output Resistance vs. Input Voltage
Figure 7. Output Resistance vs. Temperature
(50
W
Load)
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CAT660
TYPICAL OPERATING CHARACTERISTICS
5.0
INV. OUTPUT VOLTAGE (V)
4.8
4.6
4.4
4.2
4.0
1.0
0.8
0.6
0.4
0.2
0
OUTPUT VOLTAGE (V)
V+ = 3 V
V+ = 5 V
0
20
40
60
80
100
0
20
40
60
80
100
LOAD CURRENT (mA)
LOAD CURRENT (mA)
Figure 8. Inverted Output Voltage vs. Load,
V+ = 5 V
20
18
16
FREQUENCY (kHz)
14
12
10
8
6
4
2
0
BOOST = OPEN
2
3
4
SUPPLY VOLTAGE (V)
5
6
0
2
LV = OPEN
LV = GND
FREQUENCY (kHz)
150
200
Figure 9. Output Voltage Drop vs. Load
Current
100
LV = GND
LV = OPEN
50
BOOST = +V
3
4
SUPPLY VOLTAGE (V)
5
6
Figure 10. Oscillator Frequency vs. Supply
Voltage
10,000
No Load
INPUT CURRENT (mA)
1,000
V+ = 5 V
Figure 11. Oscillator Frequency vs. Supply
Voltage
100
10
1
10
100
1,000
OSCILLATOR FREQUENCY (kHz)
Figure 12. Supply Current vs. Oscillator
Frequency
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