Alternative Device Available, Use CNY17
CNY17., CNY17G
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
• Isolation test voltage 5000 V
RMS
A
C
NC
i179004-4
1
2
3
6 B
5 C
4 E
• Long term stability
• Industry standard dual-in-line package
• V
IORM
= 850 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
V
D E
AGENCY APPROVALS
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (0884-5) available with option 1
• BSI IEC 60950-1:2006 IEC 60065
• FIMKO
• CQC
17201_4
DESCRIPTION
The CNY17 is an optically coupled pair consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon NPN phototransitor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output.
The CNY17 can be used to replace relays and transformers
in many digital interface applications, as well as analog
applications such as CRT modulation.
ORDERING INFORMATION
DIP-6
DIP-6, 400 mil
C
N
Y
1
PART NUMBER
7
-
#
7.62 mm
10.16 mm
AGENCY CERTIFIED/PACKAGE
cUL, VDE, BSI, FIMKO, CQC
DIP-6
DIP-6, 400 mil
40 to 80
CNY17-1.
CNY17G-1
63 to 125
CNY17-2.
CNY17G-2
CTR (%)
100 to 200
CNY17-3.
CNY17G-3
160 to 320
CNY17-4.
CNY17G-4
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
t < 1 ms
BV
CEO
BV
EBO
I
C
I
C
P
diss
70
7
50
100
150
V
V
mA
mA
mW
t
≤
10 μs
V
R
I
F
I
FSM
P
diss
5
60
3
100
V
mA
A
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Rev. 1.6, 17-Feb-14
Document Number: 81863
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available, Use CNY17
CNY17., CNY17G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Isolation test voltage
between emitter and detector referred to
climate DIN 50014, part 2, Nov. 74
Creepage distance (CNY17.)
Clearance distance (CNY17.)
Creepage distance (CNY17G)
Clearance distance (CNY17G)
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
(1)
max. 10 s, dip soldering: distance to
seating plane
≥
1.5 mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
sld
t = 1 min
V
ISO
5000
≥
7
≥
7
≥
8
≥
8
≥
0.4
250
≥
10
12
≥
10
11
- 55 to + 125
- 55 to + 100
260
Ω
Ω
°C
°C
°C
V
RMS
mm
mm
mm
mm
mm
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
CNY17-1
Collector emitter, leakage current
V
CE
= 10 V
CNY17-2
CNY17-3
CNY17-4
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
0.25
0.6
2
2
5
5
50
50
100
100
0.4
V
pF
nA
nA
nA
nA
V
CE
= 5 V, f = 1 MHz
V
CB
= 5 V, f = 1 MHz
V
EB
= 5 V, f = 1 MHz
C
CE
C
CB
C
EB
R
th
5.2
6.5
7.5
500
pF
pF
pF
K/W
I
F
= 60 mA
I
R
= 10 μA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
th
6
0.01
25
750
10
1.25
1.65
V
V
μA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Rev. 1.6, 17-Feb-14
Document Number: 81863
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available, Use CNY17
CNY17., CNY17G
www.vishay.com
Vishay Semiconductors
PART
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
30
45
70
90
TYP.
MAX.
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
V
CE
= 5 V, I
F
= 10 mA
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
Note
• Current transfer ratio and collector-emitter leakage current by dash number (T
amb
°C).
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
TEST CONDITION
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 20 mA
Turn-on time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Rise time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Turn-off time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Fall time
I
F
= 10 mA
I
F
= 5 mA
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
PART
SYMBOL
t
on
t
r
t
off
t
f
f
CO
t
on
t
on
t
on
t
on
t
r
t
r
t
r
t
r
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
MIN.
TYP.
3
2
2.3
2
250
3
4.2
4.2
6
2
3
3
4.6
18
23
23
25
11
14
14
15
MAX.
UNIT
μs
μs
μs
μs
kHz
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
LINEAR OPERATION (WITHOUT SATURATION)
SWITCHING OPERATION (WITH SATURATION)
Rev. 1.6, 17-Feb-14
Document Number: 81863
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available, Use CNY17
CNY17., CNY17G
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
I
F
R
L
= 75
Ω
I
C
(T
A
= 0 °C, V
CE
= 5 V)
I
C
/I
F
= f (I
F
)
I
C
(%)
I
F
V
CC
= 5 V
100
1
2
3
4
47
Ω
10
icny17_01
1
0.1
icny17_04
1
10
I
F
(mA)
Fig. 1 - Linear Operation (without Saturation)
Fig. 3 - Current Transfer Ratio vs. Diode Current
1000
(T
A
= 25 °C, V
CE
= 5 V)
I
C
/I
F
= f (I
F
)
I
F
1 kΩ
I
C
(%)
I
F
V
CC
= 5 V
100
10
47
Ω
1
2
3
4
1
icny17_02
0.1
icny17_05
1
10
I
F
(mA)
Fig. 1 - Switching Operation (with Saturation)
Fig. 4 - Current Transfer Ratio vs. Diode Current
1000
(T
A
= - 25 °C, V
CE
= 5 V)
I
C
/I
F
= f (I
F
)
1000
(T
A
= 50 °C, V
CE
= 5 V)
I
C
/I
F
= f (I
F
)
I
C
(%)
I
F
10
1
2
3
4
I
C
(%)
I
F
100
100
1
2
3
4
10
1
0.1
icny17_03
1
1
10
icny17_06
0.1
1
10
I
F
(mA)
I
F
(mA)
Fig. 2 - Current Transfer Ratio vs. Diode Current
Fig. 5 - Current Transfer Ratio vs. Diode Current
Rev. 1.6, 17-Feb-14
Document Number: 81863
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Alternative Device Available, Use CNY17
CNY17., CNY17G
www.vishay.com
Vishay Semiconductors
1000
(T
A
= 75 °C, V
CE
= 5 V)
I
C
/I
F
= f (I
F
)
40
I
C
= f (V
CE
)
I
F
= 14 mA
30
I
C
(%)
I
F
100
I
C
20
I
F
= 12 mA
I
F
=10 mA
I
F
= 7 mA
10
1
2
3
4
10
I
F
= 1 mA
I
F
= 5 mA
I
F
= 2 mA
10
15
1
0.1
icny17_07
0
1
10
0
icny17_10
5
I
F
(mA)
V
CE
(V)
Fig. 6 - Current Transfer Ratio vs. Diode Current
Fig. 9 - Output Characteristics
1000
(I
F
= 10 mA, V
CE
= 5 V)
I
C
/I
F
= f (T)
4
1.2
V
F
= f (I
F
)
25 °C
50 °C
75 °C
1.1
I
C
(%)
I
F
100
1
V
F
(V)
1.0
0.9
0
25
50
75
icny17_11
3
2
10
- 25
icny17_08
0.1
1
10
100
T
A
(°C)
I
F
(mA)
Fig. 7 - Current Transfer Ratio (CTR) vs. Temperature
Fig. 10 - Forward Voltage vs. Forward Current
30
25
20
15
I
B
= 20 µA
1
I
C
= f (V
CE
)
I
F
= 0
I
B
= 40 µA
V
CE
= 35 V
I
CEO
= f (V,T)
(I
F
= 0)
I
CEO
(µA)
I
C
(mA)
0.1
10
5
0
0
icny17_09
I
B
= 15 µA
I
B
= 10 µA
I
B
=
I
B
=
0.01
V
CE
= 12 V
5 µA
2 µA
0.001
5
V
CE
(V)
10
15
icny17_12
0
25
50
75 °C
T
A
100
Fig. 8 - Transistor Characteristics
Fig. 11 - Leakage Current vs. Ambient Temperature
Rev. 1.6, 17-Feb-14
Document Number: 81863
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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