6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Schematic
Features:
•
4N2X series: 4N25, 4N26, 4N27, 4N28
•
4N3X series: 4N35, 4N36, 4N37, 4N38
•
H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
•
High isolation voltage between input and output
(Viso=5000 V rms)
•
Creepage distance >7.62 mm
•
Operating temperature up to +110°C
•
Compact dual-in-line package
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approved
•
NEMKO approval
•
DEMKO approval
•
FIMKO approval
•
CSA approved
•
CQC approved
Pin Configuration
1. Anode
2. Cathode
3. No Connection
4. Emitter
5. Collector
6. Base
Description
The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically
coupled to a phototransistor.
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Applications
•
Power supply regulators
•
Digital logic inputs
•
Microprocessor inputs
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3
www.everlight.com
DATASHEET
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward current
Peak forward current (t = 10µs)
Input
Reverse voltage
Power dissipation (T
A
= 25°C)
Derating factor (above 100°C)
Collector-Emitter voltage
Collector-Base voltage
Emitter-Collector voltage
Output
Emitter-Base voltage
Power dissipation (T
A
= 25°C)
Derating factor (above 100°C)
Total Power Dissipation
Isolation Voltage*
1
Operating Temperature
Storage Temperature
Soldering Temperature*
2
Symbol
I
F
I
FM
V
R
P
D
V
CEO
V
CBO
V
ECO
V
EBO
P
C
P
TOT
V
ISO
T
OPR
T
STG
T
SOL
Rating
60
1
6
100
3.8
80
80
7
7
150
9.0
200
5000
-55 to 110
-55 to 125
260
Unit
mA
A
V
mW
mW/°C
V
V
V
V
mW
mW/°C
mW
V rms
°C
°C
°C
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together.
*
2 For 10 seconds
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3
www.everlight.com
DATASHEET
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward voltage
Reverse current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.5
10
-
Unit
V
µA
pF
Condition
I
F
= 10mA
V
R
= 6V
V = 0, f = 1MHz
Output
Parameter
Collector-Base dark current
4N2X
Collector-
Emitter
dark current
H11AX
4N3X
BV
CEO
BV
CBO
BV
ECO
BV
EBO
C
CE
I
CEO
-
80
80
7
7
-
-
-
-
-
-
8
50
-
-
-
-
-
V
V
V
V
pF
Symbol
I
CBO
Min
-
-
Typ.
-
-
Max.
20
50
nA
V
CE
= 60V, IF=0mA
I
c
=1mA
I
C
=0.1mA
I
E
=0.1mA
I
E
=0.1mA
VCE=0V, f=1MHz
Unit
nA
Condition
V
CB
= 10V
V
CE
= 10V, IF=0mA
Collector-Emitter
breakdown voltage
Collector-Base
breakdown voltage
Emitter-Collector
breakdown voltage
Emitter-Base
breakdown voltage
Collector-Emitter
capacitance
* Typical values at T
a
= 25°C
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3
www.everlight.com
DATASHEET
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Transfer Characteristics
Parameter
4N35, 4N36,
4N37
H11A1
Current
Transfer
ratio
H11A5
4N25, 4N26,
4N38,
H11A2, H11A3
4N27, 4N28,
H11A4
4N25, 4N26,
4N27, 4N28
4N35, 4N36,
4N37
H11A1,H11A2,
H11A3,H11A4,
H11A5
4N38
Isolation resistance
Input-output capacitance
4N25, 4N26,
4N27, 4N28,
H11A1,H11A2,
H11A3,H11A4,
H11A5
4N35, 4N36,
4N37, 4N38
4N25, 4N26,
4N27, 4N28,
H11A1,H11A2,
H11A3,H11A4,
H11A5
4N35, 4N36,
4N37, 4N38
* Typical values at T
a
= 25°C
R
IO
C
IO
CTR
Symbol
Min
100
50
30
20
10
-
-
V
CE(sat)
-
-
10
11
-
-
-
-
0.2
0.4
1.0
-
-
Ω
pF
I
F
= 20mA, I
c
= 4mA
V
IO
= 500Vdc
V
IO
= 0, f = 1MHz
V
CC
= 10V, I
F
= 10mA,
R
L
= 100Ω
See Fig. 11
V
CC
= 10V, I
C
= 2mA,
R
L
= 100Ω, See Fig. 11
V
CC
= 10V, I
F
= 10mA,
R
L
= 100Ω
See Fig. 11
V
CC
= 10V, I
C
= 2mA,
R
L
= 100Ω, See Fig. 11
Typ.
-
-
-
-
-
-
-
Max.
-
-
-
%
-
-
0.5
0.3
V
I
F
= 10mA, I
c
= 0.5mA
I
F
= 50mA, I
c
= 2mA
I
F
= ±10mA ,V
CE
= 10V
Unit
Condition
Collector-
Emitter
saturation
voltage
-
Ton
-
3
10
µs
Turn-on
time
10
12
-
Toff
-
3
10
µs
Turn-off
time
9
12
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3
www.everlight.com
DATASHEET
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Typical Electro-Optical Characteristics Curves
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 23, 2013. Issue No: DPC-0000045 Rev. 3
www.everlight.com
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