GBJ10A THRU GBJ10M
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 10.0 Amperes
ENTED
PAT
HOLE FOR NO.
6 SCREW
.119 (0.5)
1.193(30.3)
1.169(29.7)
GBJ
.203(5.16)
.189(4.80)
.150(3.8)
.134(3.4)
.134 (3.4)
.122 (3.1)
FEATURES
* Internal Constructure with GPRC (Glass Passivated Rectifier Chip)
inside
* High Case Dielectric Strength of 1500V
RMS
* Low Reverse Leakage Current
* High Surge Current Capability
* Ideal for Printed Circuit Board Applications
* Plastic Material-UL Recognition Flammability
Classification 94V-0
.800(20.3)
.697(17.7)
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
+
~
~ -
.441 (11.2)
.425 (10.8)
.165(4.2)
.150(3.8)
.708(18.0)
.043(1.1)
.035(0.9)
.402
.386
(10.2)
(9.8)
.303
.287
(7.7)
(7.3)
.303
.287
(7.7)
(7.3)
.669(17.0)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
MECHANICAL DATA
*Dimensions in inches and (millimeters)
Case :
GBJ molded plastic
Terminals :
Plated Leads, solderable per
MIL-STD-750, Method 2026
Polarity :
Molded on body
Mounting :
Through Hole for # 6 screw
Mounting torque :
5.0 in-lbs maximum
Weight :
6.6 grams
SuperBridge with GPRC inside
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward (with heatsink Note 2) rectified
current at T
C
=100 C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @ I
F
=5.0 A
Maximum DC reverse current
at rated DC blocking voltage
I
2
t rating for fusing ( t < 8.3ms )
Typical junction capacitance per element (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
@T
C
=25 C
@T
C
=125 C
o
o
o
o
SYMBOLS
GBJ10A GBJ10B GBJ10D GBJ10G GBJ10J GBJ10K GBJ10M
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
10.0
I
FSM
170
Amps
V
F
1.05
5.0
Volts
I
R
I
2
t
C
J
R
JC
500
120
55
1.4
-55 to +175
uA
2
A s
pF
K/W
o
T
J
,T
STG
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
(2) Device mounted on 150 x 150 x 1.6mm Cu Plate Heatsink.
06/2003
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES GBJ10A THRU GBJ10M
FIG.1 - FORWARD CURRENT DERATING CURVE
10
180
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
Single half-sine-wave
(JEDEC Method)
8
150
120
90
60
30
0
6
4
2
Resistive or Inductive Load
0
25
50
75
100
125
o
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
1000
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10
100
T
J
=125 C
T
J
=100 C
o
o
1.0
10
0.1
1.0
T
J
=50 C
o
T
J
=25 C
PULSE WIDTH=300uS
o
0.01
0
0.4
0.8
1.2
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
2.0
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE, pF
T
J
= 25 C
o
10
1.0
1.0
10
REVERSE VOLTAGE, VOLTS
100
03/2003
Zowie Technology Corporation
FPGA/CPLD
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