SE2460
GaAs Infrared Emitting Diode
FEATURES
•
Miniature, hermetically sealed, pill style, metal
can package
•
18¡ (nominal) beam angle
•
Wide operating temperature range
(- 55¡C to +125¡C)
•
Ideal for direct mounting to printed circuit boards
•
935 nm wavelength
•
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
INFRA--1.TIF
DESCRIPTION
The SE2460 is a gallium arsenide infrared emitting
diode mounted in a hermetically sealed, glass lensed,
metal can package. This package directly mounts in
double sided PC boards.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
DIM_002.ds4
16
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE2460
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
75 mA
125 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.19 mW/¡C,when soldered into a double sided printed circuit
board.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
17
SE2460
GaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40
-30
-20
-10
0
+10 +20 +30 +40
Fig. 2
gra_111.ds4
Radiant Intensity vs
Forward Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
10.0
20.0
30.0
40.0
gra_014.ds4
Normalized radiant
intensity
Relative intensity
50.0
Angular displacement - degrees
Fig. 3
Forward Voltage vs
Forward Current
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0
10
20
30
40
50
60
70
80
Forward current - mA
Fig. 4
Forward Voltage vs
Temperature
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
-50
-25
0
25
50
75
100
125
I
F
= 20 mA
gra_203.ds4
gra_200.ds4
Forward voltage - V
Forward voltage - V
Forward current - mA
Fig. 5
Spectral Bandwidth
gra_005.ds4
Temperature - °C
Fig. 6
Coupling Characteristics
with SD2440
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
gra_015.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870
Relative intensity
890
910
930
950
970
990
1010
Wavelength - nm
Normalized light
current
Lens-to-lens separation - inches
18
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE2460
GaAs Infrared Emitting Diode
Fig. 7
Normalized Power Output vs
Temperature
2.0
1.8
1.6
1.4
1.2
1.0
.8
.6
.4
.2
0
-50
-25
0
+25
+50
+75 +100 +125
gra_131.ds4
Normalized power output
I
F
= 50 mA
I
F
= 20 mA
T
A
- Ambient temperature - (°C)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
19
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