MOCD207M, MOCD208M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
November 2006
MOCD207M, MOCD208M
Dual Channel Phototransistor Small Outline Surface
Mount Optocouplers
Features
■
Dual Channel Optocoupler
■
Convenient Plastic SOIC-8 Surface Mountable
■
■
■
■
■
■
■
Applications
■
Feedback control circuits
■
Interfacing and coupling systems of different
Package Style
Two channels in one compact surface mount package
Closely Matched Current Transfer Ratios to Minimize
Unit-to-Unit Variation
Minimum V
(BR)CEO
of 70 Volts Guaranteed
Standard SOIC-8 Footprint, with 0.050” Lead Spacing
Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
High Input-Output Isolation of 2500 Vac (rms)
Guaranteed
Meets U.L. Regulatory Requirements, File #E90700,
Volume 2
potentials and impedances
■
General purpose switching circuits
■
Monitor and detection circuits
Description
The MOCD207M/MOCD208M consist of two silicon pho-
totransistors optically coupled to two GaAs infrared LEDs.
These devices are constructed in a small outline surface
mount package which conforms to the standard SOIC-8
footprint.
Schematic
Package
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
ANODE 2 3
6 COLLECTOR 2
CATHODE 2 4
5 EMITTER 2
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MOCD207M, MOCD208M Rev. 1.0.5
MOCD207M, MOCD208M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified)
Symbol
EMITTER
I
F
I
F
(pk)
V
R
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
T
L
Input-Output Isolation Voltage
(1, 2)
(f = 60Hz, 1 min. Duration)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (1/16” from case,
10 sec. duration)
2500
250
2.94
-40 to +100
-40 to +125
260
Vac(rms)
mW
mW/°C
°C
°C
°C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
70
70
7.0
150
150
1.76
V
V
V
mA
mW
mW/°C
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
60
1.0
6.0
90
0.8
mA
A
V
mW
mW/°C
Rating
Value
Unit
2
MOCD207M, MOCD208M Rev. 1.0.5
www.fairchildsemi.com
MOCD207M, MOCD208M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
(3)
Symbol
EMITTER
V
F
I
R
C
I
CEO
I
CEO
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
Emitter-Collector Breakdown
Voltage
C
CE
CTR
Collector-Emitter Capacitance
Current Transfer Ratio,
Collector to Emitter
(4)
COUPLED
I
F
= 10mA, V
CE
= 5V
I
F
= 1mA, V
CE
= 5V
V
CE (sat)
Collector-Emitter Saturation
Voltage
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
(1, 2)
Isolation Resistance
(2)
Isolation Capacitance
(2)
I
C
= 2.0mA, I
F
= 10mA
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
f = 60Hz, t = 1 min.,
I
I-O
≤
2µA
V
I-O
= 500V
V
I-O
= 0V, f = 1MHz
MOCD207M
MOCD208M
MOCD207M
MOCD208M
All
All
All
All
All
All
All
All
2500
10
11
0.2
3.0
2.8
1.6
2.2
100
40
34
13
0.4
V
µs
µs
µs
µs
Vac(rms)
Ω
pF
200
125
%
Input Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
V
CE
= 10V, T
A
= 25°C
V
CE
= 10V, T
A
= 100°C
I
C
= 100µA
I
E
= 100µA
f = 1.0 MHz, V
CE
= 0V
I
F
= 30mA
V
R
= 6.0V
All
All
All
All
All
All
All
All
70
7.0
1.25
0.001
18
1.0
1.0
100
10
7.0
50
1.55
100
V
µA
pF
nA
µA
V
V
pF
Parameter
Test Conditions
Device
Min. Typ.* Max.
Unit
DETECTOR
*Typical values at T
A
= 25°C
Note:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3
MOCD207M, MOCD208M Rev. 1.0.5
www.fairchildsemi.com
MOCD207M, MOCD208M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
10
Fig. 2 Output Curent vs. Input Current
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
0.01
0.1
1
10
100
Fig. 3 Output Current vs. Ambient Temperature
10
I
F
- LED INPUT CURRENT (mA)
Fig. 4 Output Current vs. Collector - Emitter Voltage
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.6
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25
o
C
0.1
-80
-60
-40
-20
0
20
40
60
o
80
100
120
T
A
- AMBIENT TEMPERATURE ( C)
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
10000
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
=10V
100
10
1
0.1
0
20
40
60
o
80
100
T
A
- AMBIENT TEMPERATURE ( C)
4
MOCD207M, MOCD208M Rev. 1.0.5
www.fairchildsemi.com
MOCD207M, MOCD208M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Package Dimensions
Surface Mount
PIN 1
ID.
8-Pin Small Outline
0.024 (0.61)
0.060 (1.52)
0.164 (4.16)
0.144 (3.66)
SEATING PLANE
0.275 (6.99)
0.155 (3.94)
0.202 (5.13)
0.182 (4.63)
0.143 (3.63)
0.123 (3.13)
0.010 (0.25)
0.006 (0.16)
0.050 (1.27)
0.021 (0.53)
0.011 (0.28)
0.008 (0.20)
0.003 (0.08)
0.050 (1.27)
TYP
0.244 (6.19)
0.224 (5.69)
Lead Coplanarity : 0.004 (0.10) MAX
5
MOCD207M, MOCD208M Rev. 1.0.5
www.fairchildsemi.com
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