MSM832 - 020/025/35
ISSUE 5.0 April 2001
32K x 8 SRAM
MSM832 - 020/025/35
Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear
NE29 8SE, England Tel. +44 (0)191 2930500 Fax. +44 (0) 191 2590997
Issue 5.0 : April 2001
Description
The MSM832 is a high speed Static RAM organ-
ised as 32K x 8 available with access times of 20
25 or 35 ns. The device is available in four ce-
ramic package options including the high denisty
VIL™ package. It features completely static
operation with a low power standby mode and is
3.0V battery back-up compatible. It is directly TTL
compatible and has common data inputs and
outputs.
The device may be screened in accordance with
MIL-STD-883.
Block Diagram
32,768 x 8 CMOS High Speed Static RAM
Features
• Fast Access Times of 20/25/35 ns.
• JEDEC Standard footprint.
• Operating Power
908 mW (max)
• Low Power Standby 11 mW (max) -L version.
• Low Voltage Data Retention.
• Directly TTL compatible.
• Completely Static Operation.
Pin Definitions
A3
A4
A5
A6
A7
A8
A12
A13
A14
X
Address
Buffer
Row
Decoder
Memory Array
1 NC
32 Vcc
31 WE
30 A13
29
28
27
26
25
24
23
22
21
512 X 512
A7
A12
A14
4
3
2
D0
D7
I/O
Buffer
Column I/O
Column Decoder
WE
OE
Y Address Buffer
A6
A5
A4
A3
A2
A1
A0
NC
D0
5
6
7
8
9
10
11
12
13
14 D1
J,W
PACKAGE
TOP VIEW
A8
A9
A11
NC
OE
A10
CS
D7
D6
20 D5
19 D4
18 D3
17 NC
16 GND
15 D2
A0
A1
A2
A9
A10
A11
CS
Package Details
Pin Count
32
32
Description
Package Type
J
W
J-Leaded Chip Carrier (JLCC)
Leadless Chip Carrier (LCC)
Pin Functions
A0-A14
Address inputs
D0-7
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
V
CC
Power(+5V)
GND
Ground
1
ISSUE 5.0 April 2001
MSM832 - 020/025/35
DC OPERATING CONDITIONS
Absolute Maximum Ratings
(1)
Voltage on any pin relative to V
SS (2)
Power Dissipation
Storage Temperature
V
T
P
T
T
STG
-0.5V to +7
1
-65 to +150
V
W
o
C
Notes : (1) Stresses above those listed may cause permanent damage. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
Symbol
V
CC
V
IH
V
IL
T
A
T
AL
T
AM
min
4.5
2.2
-0.5
0
-40
-55
typ
5.0
-
-
-
-
-
max
5.5
V
CC
+0.5
0.8
70
85
125
Unit
V
V
V
o
o
C
C ( Suffix
I
)
C ( Suffix
M, MB
)
o
DC Electrical Characteristics
(V
CC
= 5.0V±10%, T
A
=-55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Average Supply Current
Standby Supply Current
Symbol Test Condition
I
LI
I
LO
I
CC
I
SB1
I
SB2
V
OL
V
OH
V
IN
=0V to V
CC
CS=V
IH
or OE=V
IH
,V
I/O
= V
SS
to V
CC
,WE=V
IL
CS=V
IL
,I
I/O
=0mA, Min. Cycle, Duty=100%
CS=V
IH
,Min Cycle.
CS≥V
CC
-0.2V, 0.2V≥V
IN
≥V
CC
-0.2V
I
OL
= 8.0 mA
I
OH
= -4.0 mA
min
-2
-2
-
-
-
-
2.4
typ
-
-
-
-
-
-
-
max
2
2
165
40
2
0.4
-
Unit
µA
µA
mA
mA
uA
V
V
-L Version
Output Voltage
Capacitance
(V
CC
=5V±10%,T
A
=25°C)
Parameter
Input Capacitance
I/O Capacitance
Note:
Symbol Test Condition
C
IN
C
I/O
V
IN
= 0V
V
I/O
= 0V
min
-
-
typ
-
-
max
7
8
Unit
pF
pF
This parameter is not 100% tested.
2
MSM832 - 020/025/35
ISSUE 5.0 April 2001
Operating Modes
The table below shows the logic inputs required to control the MSM832 SRAM.
Mode
Not Selected
OutputDisable
Read
Write
CS
1
0
0
0
OE
X
1
0
X
1 = V
IH
,
WE
X
1
1
0
V
CC
Current
I
SB1
,I
SB2
I
CC
I
CC
I
CC
0 = V
IL
,
I/O Pin Reference Cycle
High Z
High Z
D
OUT
D
IN
Read Cycle
Write Cycle
Power Down
X = Don't Care
Low V
cc
Data Retention Characteristics - L Version Only
( T
A
=-55°C to +125°C)
Parameter
V
CC
for Data Retention
Data Retention Current -L Version
Chip Deselect to Data Retention Time
Operation Recovery Time
Notes (1) t
RC
= Read Cycle Time
Symbol
V
DR
I
CCDR2
t
CDR
t
R
Test Condition
CS≥V
CC
-0.2V, V
IN
≥0V
See Retention Waveform
See Retention Waveform
min
2.0
0
t
RC(1)
typ
-
-
-
-
max
5.5
300
-
-
Unit
V
µA
ns
ns
V
CC
=2.0V, CS≥V
CC
-0.2V, V
IN
≥0V
-
AC Test Conditions
* Input pulse levels: 0V to 3.0V
* Input rise and fall times: 3ns
* Input and Output timing reference levels: 1.5V
* Output load: see diagram
* V
cc
=5V±10%
Output Load
I/O Pin
166
Ω
1.76V
30pF
3
ISSUE 5.0 April 2001
MSM832 - 020/025/35
AC OPERATING CONDITIONS
Read Cycle
20
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Hold from Address Change
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
(3)
Output Disable to Output in High Z
(3)
25
max
-
20
20
9
-
-
-
9
9
35
max
-
25
25
12
-
-
-
12
12
Symbol min
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
20
-
-
-
5
6
0
0
0
min
25
-
-
-
5
6
0
0
0
min
35
-
-
-
5
6
0
0
0
max
-
35
35
15
-
-
-
15
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle
Parameter
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
20
Symbol min. max
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
20
15
15
0
15
0
0
15
0
5
-
-
-
-
-
-
15
-
-
-
25
min. max
25
20
20
0
15
0
0
20
0
5
-
-
-
-
-
-
15
-
-
-
35
min
35
30
30
0
20
0
0
20
0
5
max
-
-
-
-
-
-
18
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
MSM832 - 020/025/35
ISSUE 5.0 April 2001
Read Cycle 1 Timing Waveform
(1)
t
RC
Address
t
AA
OE
t
OE
t
OLZ
t
OH
CS
t
CLZ
t
ACS
t
CHZ(3)
t
OHZ(3)
Dout
High-Z
Data Valid
Read Cycle 2 Timing Waveform
(1) (2) (4)
t
RC
Address
t
AA
t
OH
t
OH
Dout
Data Valid
Notes: (1) WE is High for Read Cycle.
(2) Device is continuously selected, CS=V
IL
.
(3) t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels. These parameters are sampled and not 100% tested.
(4) OE=V
IL
.
5
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