Features
◆
◆
HIGH-SPEED 2.5V
512K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
◆
IDT70T653M
◆
◆
◆
◆
◆
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T653M easily expands data bus width to 72 bits or
more using the Busy Input when cascading more than one
device
Busy input for port contention management
Interrupt Flags
◆
◆
◆
◆
◆
◆
◆
◆
◆
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Includes JTAG functionality
Available in a 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
512K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
18L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L
SEM
L
INT
L(1)
ZZ
L(2)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TD O
JTAG
TC K
TMS
TRST
BUSY
R
SEM
R
INT
R(1)
ZZ
CONTROL
LOGIC
ZZ
R(2)
NOTES:
1.
INT
is non-tri-state totem-pole outputs (push-pull).
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx
and the sleep mode
pins themselves (ZZx) are not affected during sleep mode.
5679 drw 01
JANUARY 2009
DSC-5679/5
1
©2009 Integrated Device Technology, Inc.
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70T653M is a high-speed 512K x 36 Asynchronous Dual-
Port Static RAM. The IDT70T653M is designed to be used as a stand-
alone 18874K-bit Dual-Port RAM. This device provides two independent
ports with separate control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in memory. An
automatic power down feature controlled by the chip enables (either
CE
0
or CE
1
) permit the on-chip circuitry of each port to enter a very low standby
power mode.
The IDT70T653M has a RapidWrite Mode which allows the designer
to perform back-to-back write operations without pulsing the R/W input
each cycle. This is especially significant at the 10ns cycle time of the
IDT70T653M, easing design considerations at these high performance
levels.
The 70T653M can support an operating voltage of either 3.3V or 2.5V
on one or both ports, controlled by the OPT pins. The power supply for
the core of the device (V
DD
) is at 2.5V.
2
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configuration
(1,2,3)
70T653M BC
BC-256
(4,5)
256-Pin BGA
Top View
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
10/07/03
A1
NC
B1
TDI
B2
NC
B3
A
17L
A
14L
B4
B5
A
11L
B6
A
8L
B7
BE
2L
B8
CE
1L
B9
OE
L
B10
INT
L
B11
A
5L
B12
A
2L
B13
A
0L
B14
NC
B15
NC
B16
I/O
18L
C1
NC
C2
TDO
C3
A
18L
C4
A
15L
C5
A
12L
C6
A
9L
C7
BE
3L
C8
CE
0L
R/W
L
C9
C10
NC
C11
A
4L
C12
A
1L
C13
NC
C14
I/O
17L
C15
NC
C16
I/O
18R
I/O
19L
V
SS
D1
D2
D3
A
16L
D4
A
13L
D5
A
10L
D6
A
7L
D7
BE
1L
BE
0L
SEM
L
BUSY
L
A
6L
D8
D9
D10
D11
D12
A
3L
D13
OPT
L
I/O
17R
I/O
16L
D14
D15
D16
I/O
20R
I/O
19R
I/O
20L
E1
E2
E3
V
DD
E4
V
DDQL
E5
V
DDQL
V
DDQR
V
DDQR
V
DDQL
V
DDQL
V
DDQR
V
DDQR
V
DD
I/O
15R
I/O
15L
I/O
16R
E6
E7
E8
E9
E10
E11
E12
E13
E14
E15
E16
I/O
21R
I/O
21L
I/O
22L
V
DDQL
V
DD
F1
F2
F3
F4
F5
V
DD
F6
V
SS
F7
V
SS
F8
V
SS
F9
V
SS
F10
V
DD
F11
V
DD
V
DDQR
I/O
13L
I/O
14L
I/O
14R
F12
F13
F14
F15
F16
I/O
23L
I/O
22R
I/O
23R
V
DDQL
V
DD
G1
G2
G3
G4
G5
NC
G6
V
SS
G7
V
SS
G8
V
SS
G9
V
SS
G10
V
SS
G11
V
DD
V
DDQR
I/O
12R
I/O
13R
I/O
12L
G12
G13
G14
G15
G16
I/O
24R
I/O
24L
I/O
25L
V
DDQR
V
SS
H1
H2
H3
H4
H5
V
SS
H6
V
SS
H7
V
SS
H8
V
SS
H9
V
SS
H10
V
SS
H11
V
SS
H12
V
DDQL
I/O
10L
I/O
11L
I/O
11R
H13
H14
H15
H16
I/O
26L
I/O
25R
I/O
26R
V
DDQR
V
SS
J1
J2
J3
J4
J5
V
SS
J6
V
SS
J7
V
SS
J8
V
SS
J9
V
SS
J10
V
SS
J11
V
SS
J12
V
DDQL
I/O
9R
J13
J14
IO
9L
I/O
10R
J15
J16
I/O
27L
I/O
28R
I/O
27R
V
DDQL
ZZ
R
K1
K2
K3
K4
K5
V
SS
K6
V
SS
K7
V
SS
K8
V
SS
K9
V
SS
K10
V
SS
K11
ZZ
L
V
DDQR
I/O
8R
I/O
7R
I/O
8L
K12
K13
K14
K15
K16
I/O
29R
I/O
29L
I/O
28L
V
DDQL
V
SS
L1
L2
L3
L4
L5
V
SS
L6
V
SS
L7
V
SS
L8
V
SS
L9
V
SS
L10
V
SS
L11
V
SS
L12
V
DDQR
I/O
6R
I/O
6L
I/O
7L
L13
L14
L15
L16
I/O
30L
I/O
31R
I/O
30R
V
DDQR
V
DD
M1
M2
M3
M4
M5
NC
M6
V
SS
M7
V
SS
M8
V
SS
M9
V
SS
M10
V
SS
M11
V
DD
M12
V
DDQL
I/O
5L
M13
M14
I/O
4R
I/O
5R
M15
M16
I/O
32R
I/O
32L
I/O
31L
V
DDQR
N1
N2
N3
N4
V
DD
N5
V
DD
N6
V
SS
N7
V
SS
N8
V
SS
N9
V
SS
N10
V
DD
N11
V
DD
V
DDQL
I/O
3R
I/O
3L
I/O
4L
N12
N13
N14
N15
N16
I/O
33L
I/O
34R
I/O
33R
V
DD
V
DDQR
V
DDQR
V
DDQL
V
DDQL
V
DDQR
V
DDQR
V
DDQL
V
DDQL
V
DD
P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
I/O
2L
P14
I/O
1R
I/O
2R
P15
P16
I/O
35R
I/O
34L
TMS
R1
R2
R3
A
16R
R4
A
13R
R5
A
10R
R6
A
7R
R7
BE
1R
BE
0R
SEM
R
BUSY
R
R8
R9
R10
R11
A
6R
R12
A
3R
R13
I/O
0L
I/O
0R
R14
R15
I/O
1L
R16
I/O
35L
T1
NC
T2
TRST
A
18R
T3
T4
A
15R
T5
A
12R
T6
A
9R
T7
BE
3R
CE
0R
R/W
R
T8
T9
T10
V
SS
T11
A
4R
T12
A
1R
T13
OPT
R
T14
NC
T15
NC
T16
,
NC
TCK
NC
A
17R
A
14R
A
11R
A
8R
BE
2R
CE
1R
OE
R
INT
R
A
5R
A
2R
A
0R
NC
NC
5679 drw 02f
NOTES:
1. All V
DD
pins must be connected to 2.5V power supply.
2. All V
DDQ
pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to V
DD
(2.5V), and 2.5V if OPT pin for that port is
set to V
SS
(0V).
3. All V
SS
pins must be connected to ground supply.
4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch.
5. This package code is used to reference the package diagram.
,
3
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
CE
0L
,
CE
1L
R/W
L
OE
L
A
0L
- A
18L
I/O
0L
- I/O
35L
SEM
L
INT
L
BUSY
L
BE
0L
-
BE
3L
V
DDQL
OPT
L
ZZ
L
V
DD
V
SS
TDI
TDO
TCK
TMS
TRST
Right Port
CE
0R
,
CE
1R
R/W
R
OE
R
A
0R
- A
18R
I/O
0R
- I/O
35R
SEM
R
INT
R
BUSY
R
BE
0R
-
BE
3R
V
DDQR
OPT
R
ZZ
R
Names
Chip Enables (Input)
Read/Write Enable (Input)
Output Enable (Input)
Address (Input)
Data Input/Output
Semaphore Enable (Input)
Interrupt Flag (Output)
Busy Input
Byte Enables (9-bit bytes) (Input)
Power (I/O Bus) (3.3V or 2.5V)
(1)
(Input)
Option for selecting V
DDQX
Sleep Mode Pin
(3)
(Input)
Power (2.5V)
(1)
(Input)
Ground (0V) (Input)
Test Data Input
Test Data Output
Test Logic Clock (10MHz) (Input)
Test Mode Select (Input)
Reset (Initialize TAP Controller) (Input)
5679 tbl 01
(1,2)
(Input)
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on I/O
X
.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to V
DD
(2.5V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to V
SS
(0V), then that
port's I/Os and controls will operate at 2.5V levels and V
DDQX
must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
3. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when
asserted. OPTx,
INTx
and the sleep mode pins themselves (ZZx) are not
affected during sleep mode. It is recommended that boundry scan not be operated
during sleep mode.
4
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control
(1,2)
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
X
SEM
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
CE
0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
CE
1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
BE
3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
X
BE
2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
X
BE
1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
X
BE
0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
X
R/W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
X
ZZ
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
Byte 3
I/O
27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
IN
High-Z
D
IN
D
IN
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
OUT
High-Z
High-Z
Byte 2
I/O
18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D
IN
High-Z
High-Z
D
IN
D
IN
High-Z
High-Z
D
OUT
High-Z
High-Z
D
OUT
D
OUT
High-Z
High-Z
Byte 1
I/O
9-17
High-Z
High-Z
High-Z
High-Z
D
IN
High-Z
High-Z
D
IN
High-Z
D
IN
High-Z
D
OUT
High-Z
High-Z
D
OUT
High-Z
D
OUT
High-Z
High-Z
Byte 0
I/O
0-8
High-Z
High-Z
High-Z
D
IN
High-Z
High-Z
High-Z
D
IN
High-Z
D
IN
D
OUT
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
High-Z
High-Z
MODE
Deselected–Power Down
Deselected–Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
High-Z Sleep Mode
5679 tbl 02
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II – Semaphore Read/Write Control
(1)
Inputs
(1)
CE
(2)
H
H
L
R/W
H
↑
X
OE
L
X
X
BE
3
X
X
X
BE
2
L
X
X
BE
1
X
X
X
BE
0
L
L
X
SEM
L
L
L
Outputs
I/O
1-8,
I/O
18-26
DATA
OUT
X
______
I/O
0
DATA
OUT
DATA
IN
______
Mode
Read Data in Semaphore Flag
(3)
Write I/O
0
into Semaphore Flag
Not Allowed
5679 tbl 03
NOTES:
1. There are eight semaphore flags written to I/O
0
and read from the I/Os (I/O
0
-I/O
08
and I/O
18
-I/O
26
). These eight semaphore flags are addressed by A
0
-A
2
.
2.
CE
= L occurs when
CE
0
= V
IL
and CE
1
= V
IH
.
CE
= H when
CE
0
= V
IH
and/or CE
1
= V
IL
.
3. Each byte is controlled by the respective
BEn.
To read data
BEn
= V
IL
.
5
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