BL
FEATURES
GALAXY ELECTRICAL
P064M --- P350M
V
DRM
: 58 - 320 V
I
PP
: 50 A
THYRISTOR SURGE PROTECTIVE DEVICE
Oxide glass passivated junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 150A
@8/20us
High off state impedance and low on state voltage
Plastic material has U/L flammability classification
94V-0
DO - 15B
MECHANICAL DATA
Case: JEDEC DO-15B molded plastic
Polarity: Denotes none cathode band
Weight: 0.4 grams
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak on-state current @ 8.3ms (one half cycle)
Junction temperature range
Storage temperature range
SYMBOL
I
PP
I
TSM
T
J
T
STG
VALUE
50
25
-55 --- +150
-55 --- +150
UNIT
A
A
THERMAL RESISTANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
SYMBOL
R
θ
JL
R
θ
JA
V
BR
/T
J
VALUE
20
100
0.1
UNIT
/W
/W
%/
Typical positive temperature coefficient for brekdown voltage
MAXIMUM RATED SURGE WAVEFORM
I
PP
, PEAK PULSE CURRENT (%)
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
300
250
120
100
75
50
100
Peak value (Ipp)
tr=rise time to peak value
tp=decay time to half value
50
Half value
0
tr
tp
TIME
www.galaxycn.com
Document Number 0291002
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
RARAMETER
OFF-STATE
RATED
REPETITIVE LEAKAGE BREAKOVER
VOLTAGE
OFF-STATE CURRENT
@ V
DRM
VOLTAGE
V
DRM
Volts
Max
I
DRM
uA
Max
V
BO
Volts
Max
ON-STATE
VOLTAGE
@ I
T
=1.0A
V
T
Volts
Max
BREAKOVER
CURRENT
P064M --- P350M
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
SYMBOL
UNITS
LIMIT
I
BO
-
mA
Min
I
BO
+
mA
Max
I
H
-
mA
Min
I
H
+
mA
Max
Co
pF
Typ
P064M
P072M
P090M
P110M
P130M
P150M
P180M
P230M
P260M
P310M
P350M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
PARAMETER
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off state capacitance
Note:2
Note:1
I
DRM
I
BO
I
H
I
BR
I
PP
I
V
V
BR
V
DRM
V
BO
V
T
NOTES: 1.I
H
(V
L
/R
L
) if this criterion is not obey ed, the T
SPD
tuiggers but does not return correctly to high-resistance state. The surge recov ery time does
not exceed 30ms.
2.Of f -state capacitance measured at f =1.0MHz; 1.0V
RMS
signal; V
R
=2V
DC
bias.
www.galaxycn.com
Document Number 0291002
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- OFF STATE CURRENT vs JUNCTION
TEMPERATURE
I
DRM
, OFF STATE CURRENT,
uA
100
P064M --- P350M
FIG.2-- RELATIVE VARIATION OF BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN
VOLTAGE
1.20
1.15
10
1.10
V
BR
(T
J
)
1.05
V
BR
(T
J
=25℃)
1
V
DRM
=50V
0.1
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.90
-50 -25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE ( )
T
J
, JUNCTION TEMPERATURE ( )
F
FIG.3 -- RELATIVE VARIATION OF BREAKOVER
VOLTAGE vs JUNCTION TEMPERATURE
FIG.4 -- ON STATE CURRENT vs ON STATE VOLTAGE
1.10
100
NORMALIZED BREAKOVER
VOLTAGE
1.05
V
BR
(T
J
)
V
BR
(T
J
=25℃)
I
T
, ON STATE CURRENT
10
1
T
J
=25℃
0.95
-50 -25
0
25
50
75
100
125
150
175
1
1
10
T
J
, JUNCTION TEMPERATURE ( )
FIG.5 -- RELATIVE VARIATION OF HOLDING
CURRENT vs JUNCTION TEMPERATURE
NORMALIZE CAPACITANCE
V
(T)
, ON STATE VOLTAGE
FIG.6 -- RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
F
NORMALIZED HOLDING CURRENT
1.6
1.4
1.2
1
.8
.6
.4
.2
-50
I
H
(T
J
)
I
H
(T
J
=25
℃
)
1
Co(V
R
)
Co(V
R
=1V)
T
J
=25℃
f=1MHz
V
RMS
=1V
.1
1
10
100
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE ( )
V
R
, REVERSE VOLTAGE
www.galaxycn.com
Document Number 0291002
BL
GALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
P064M --- P350M
FUSE
RING
TSPD 1
TELECOM
EQUIPMENT
E.G. MODEM
TIP
RING
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 2
TIP
PTC
RING
PTC
TSPD 2
TSPD 1
TSPD 3
TELECOM
EQUIPMENT
E.G. LINE
CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
www.galaxycn.com
Document Number 0291002
BL
GALAXY ELECTRICAL
4.
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