BFP640
NPN Silicon Germanium RF Transistor
•
High gain low noise RF transistor
•
Provides outstanding performance
for a wide range of wireless applications
•
Ideal for CDMA and WLAN applications
•
Outstanding noise figure
F
= 0.65 dB at 1.8 GHz
Outstanding noise figure
F
= 1.2 dB at 6 GHz
•
High maximum stable gain
G
ms
= 24 dB at 1.8 GHz
•
Gold metallization for extra high reliability
•
70 GHz
f
T
-Silicon Germanium technology
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP640
1
Pb-containing
Marking
R4s
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
package may be available upon special request
2007-05-29
1
BFP640
Maximum Ratings
Parameter
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
90°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
R
thJS
Value
≤
300
Unit
K/W
T
j
T
A
T
stg
150
-65 ... 150
-65 ... 150
°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
Symbol
V
CEO
4
3.7
13
13
1.2
50
3
200
mW
mA
Value
Unit
V
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 30 mA,
V
CE
= 3 V, pulse measured
1
T
Unit
max.
-
30
100
3
270
V
µA
nA
µA
-
typ.
4.5
-
-
-
180
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
110
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-05-29
2
BFP640
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 5 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 30 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 30 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 30 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 30 mA,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1dB Compression point at output
I
C
= 30 mA,
V
CE
= 3 V,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1/2
ma = |
S
21e /
S
12e| (k-(k²-1) ),
G
ms = |
S
21e /
S
12e |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
1
G
30
-
40
0.09
-
0.2
GHz
pF
C
cb
C
ce
-
0.23
-
C
eb
-
0.5
-
F
-
-
G
ms
-
0.65
1.2
24
-
-
-
dB
dB
G
ma
-
12.5
-
dB
|S
21e
|
2
-
-
IP
3
P
-1dB
-
-
21
10.5
26.5
13
-
-
-
-
dB
dBm
2007-05-29
3
BFP640
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
0.22
1000
2
2
1.8
2.707
227.6
1.8
0.4
0.6
0.2
0.27
3
2
-0.0065
fA
V
-
V
-
Ω
fF
ps
A
V
ns
-
-
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
TITF2
450
0.15
55
3.8
3.129
0.6
0.8
10
0
0.5
93.4
-1.42
0.8
7.291E-11
1.0E-5
-
A
-
mA
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
21
1
400
1.522
3.061
0.3
1.5
67.43
1
0.6
1.078
298
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
CBS
RBS
CBCC
LCC
C
BFP640_Chip
B
S
RCS
E
RES
CES
CCS
LCB
B
LBB
LBC
CBEC
C
LEC
CBE
I
LEB
CBEO
CCEO
CCEI
T = 25°C
Itf = 400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 )
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
CBEO =
CCEI =
CBEI =
RBS =
RCS =
RES =
120
120
20
696.2
682.4
230.6
98.4
55.9
180
79
75
131.2
102.5
112.6
180.4
1200
1200
300
pH
pH
pH
pH
pH
pH
fF
fF
fF
fF
fF
fF
fF
fF
fF
Ω
Ω
Ω
Valid up to 6GHz
2007-05-29
4
BFP640
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(
t
p
)
220
mW
10
3
180
160
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
K/W
R
thJS
10
2
P
tot
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ(
V
CB
)
f
= 1MHz
0.25
P
totmax
/P
totDC
pF
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
CB
-3
-2
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
10
s
10
0
0
0
2
4
6
8
10
V
14
t
p
V
CB
2007-05-29
5
嵌入式系统
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