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V54C3256804VALT8

产品描述Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54
产品类别存储    存储   
文件大小839KB,共52页
制造商Mosel Vitelic Corporation ( MVC )
官网地址http://www.moselvitelic.com
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V54C3256804VALT8概述

Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54

V54C3256804VALT8规格参数

参数名称属性值
是否Rohs认证不符合
Objectid102469794
包装说明TSOP, TSOP54,.46,32
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间6 ns
最大时钟频率 (fCLK)125 MHz
I/O 类型COMMON
交错的突发长度1,2,4,8
JESD-30 代码R-PDSO-G54
JESD-609代码e0
内存密度268435456 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度8
端子数量54
字数33554432 words
字数代码32000000
最高工作温度70 °C
最低工作温度
组织32MX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP
封装等效代码TSOP54,.46,32
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
认证状态Not Qualified
刷新周期8192
连续突发长度1,2,4,8
最大待机电流0.002 A
最大压摆率0.22 mA
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL

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V54C3256(16/80/40)4V(T/S/B)
256Mbit SDRAM
3.3 VOLT, TSOP II / SOC / WBGA PACKAGE
16M X 16, 32M X 8, 64M X 4
PRELIMINARY
CILETIV LESO M
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
8PC
125 MHz
8 ns
6 ns
6 ns
Features
4 banks x 4Mbit x 16 organization
4 banks x 8Mbit x 8 organization
4 banks x16Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64 ms
Available in 54 Pin TSOP II, 60 Ball WBGA and
SOC
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3256(16/80/40)4V(T/S/B) is a four
bank Synchronous DRAM organized as 4 banks x
4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit
x 4. The V54C3256(16/80/40)4V(T/S/B) achieves
high speed data transfer rates up to 166 MHz by
employing a chip architecture that prefetches multi-
ple bits and then synchronizes the output data to a
system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T/S/B
Access Time (ns)
6
Power
8PC
7PC
7
Std.
L
Temperature
Mark
Blank
V54C3256(16/80/40)4V(T/S/B) Rev. 1.5 April 2002
1

 
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