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JANTXV2N6800: 产品描述Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN; 产品类别分立半导体晶体管; 文件大小588KB，共3页; 制造商Semicoa; 官网地址http://www.snscorp.com/Semicoa.htm

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JANTXV2N6800概述

Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

JANTXV2N6800规格参数

参数名称	属性值
包装说明	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
雪崩能效等级（Eas）	0.51 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	3 A
最大漏源导通电阻	1.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	14 A
认证状态	Not Qualified
参考标准	MIL-19500
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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SCF2N6800T2

JANTX2N6800

JANTXV2N6800

POWER MOSFET

FOR RUGGED ENVIRONMENTS

DESCRIPTION

TO-205AF / TO-39

REF: MIL-PRF-19500/557



N-Channel



400 Volt



< 1.0 Ohms



3 Amp

SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term relia-

bility. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to

be used for ground based telecommunications, vehicles, ships, weapon systems and other application where

failure is not an option.

FEATURES



Available in JANTX and JANTXV equivalent levels

RDS

(ON)

< 1000 mΩ

Simple Drive Requirements

Low Gate Charge



Ease of Paralleling

Hermetically Sealed

Die Available

ABSOLUTE MAXIMUM RATINGS

PARAMETER

@ V

= 10 V, T

= 25° C

@ V

= 10 V, T

= 100° C

IDM

PD@ TC = 25° C

Continuous Drain Current

Pulsed Drain Current

(1)

Max Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

TSTG

Gate to Source Voltage

Single Pulse Avalanche Energy

(2)

Avalanche Current

(1)

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

3.0

2.0

0.20

±20

0.51

-55 to 150

300

O.98 typical

W/°C

°C

UNITS

333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900

www.semicoa.com

sales@semicoa.com

Rev. 1

JANTXV2N6800相似产品对比

	JANTXV2N6800	JANTX2N6800	SCF2N6800T2
描述	Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
包装说明	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknow	unknown
雪崩能效等级（Eas）	0.51 mJ	0.51 mJ	0.51 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V	400 V	400 V
最大漏极电流 (ID)	3 A	3 A	3 A
最大漏源导通电阻	1.1 Ω	1.1 Ω	1.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF	TO-205AF	TO-205AF
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1
端子数量	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	14 A	14 A	14 A
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
认证状态	Not Qualified	Not Qualified	-
参考标准	MIL-19500	MIL-19500	-