RN2107CT ~ RN2109CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107CT, RN2108CT, RN2109CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
•
Incorporating a bias resistor into a transistor reduces parts count.
•
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
Complementary to RN1107CT to RN1109CT
1.0±0.05
Unit: mm
Top View
0.6±0.05
0.5±0.03
0.25±0.03
３
0.65±0.02
１
0.25±0.03
２
0.35±0.02
0.15±0.03
Equivalent Circuit and Bias Resistor Values
0.05±0.03
C
Type No.
RN2107CT
RN2108CT
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
CST3
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECOTR
B
R1
R2
―
―
2-1J1A
RN2109CT
E
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2107CT
to
RN2109CT
RN2107CT
Emitter-base voltage
RN2108CT
RN2109CT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107CT
to
RN2109CT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−20
−20
−6
−7
−15
−50
50
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-10
1
2014-03-01
RN2107CT ~ RN2109CT
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
RN2107CT to 2109CT
RN2107CT
Emitter cut-off current
RN2108CT
RN2109CT
RN2107CT
DC current gain
RN2108CT
RN2109CT
Collector-emitter
saturation voltage
RN2107CT to 2109CT
RN2107CT
Input voltage (ON)
RN2108CT
RN2109CT
RN2107CT
Input voltage (OFF)
RN2108CT
RN2109CT
Collector output
capacitance
RN2107CT to 2109CT
RN2107CT
Input resistor
RN2108CT
RN2109CT
RN2107CT
Resistor ratio
RN2108CT
RN2109CT
R1/R2
⎯
R1
⎯
C
ob
V
CB
= −10
V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
= −5
V,
I
C
= −0.1
mA,
V
I (ON)
V
CE
= −0.2
V,
I
C
= −5
mA
V
CE (sat)
I
C
= −5
mA,
I
B
= −0.25
mA
h
FE
V
CE
= −5
V,
I
C
= −10
mA
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
V
EB
= −7
V, I
C
=
0
V
EB
= −15
V, I
C
=
0
Min
⎯
⎯
−0.088
−0.085
−0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
−100
−500
−0.131
−0.126
−0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.21
0.47
2.14
⎯
⎯
−0.15
−1.5
−2.2
−5.0
−1.0
−1.1
−2.6
⎯
⎯
−0.7
−0.8
−1.6
−0.5
−0.6
−1.3
V
V
V
⎯
8
17.6
37.6
0.17
0.37
1.71
⎯
12
26.4
56.4
0.26
0.56
2.56
pF
kΩ
⎯
2
2014-03-01
RN2107CT ~ RN2109CT
RN2107CT
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2107CT
IC - VI(OFF)
-10
Ta=100°C
-1000
Ta=100°C
25
-25
25
-1
-25
EMITTER COMMON
VCE= -0.2V
-0.1
-0.1
-100
EMITTER COMMON
VCE= -5V
-10
-0.2
-1
-10
-100
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2108CT
-100
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2108CT
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
EMITTER COMMON
VCE= -5V
-10
Ta=100°C
25
-1
-1000
Ta=100°C
25
-25
-25
EMITTER COMMON
VCE= -0.2V
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2109CT
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2109CT
IC - VI(OFF)
EMITTER COMMON
VCE= -0.2V
-10
EMITTER COMMON
VCE= -5V
-1000
Ta=100°C
25
-25
Ta=100°C
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.6
-1
-1.4
-1.8
-2.2
-2.6
-3
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
3
2014-03-01
RN2107CT ~ RN2109CT
RN2107CT
1000
Ta=100°C
DC CURRENT GAIN hFE
RN2107CT
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
EMITTER COMMON
IC / IB=20
hFE - IC
VCE(sat) - IC
25
100
-25
-100
Ta=100°C
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
25
-25
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2108CT
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2108CT
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
Ta=100°C
DC CURRENT GAIN hFE
25
100
-25
-100
Ta=100°C
25
-25
-10
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2109CT
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2109CT
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
DC CURRENT GAIN hFE
Ta=100°C
100
-25
25
-100
Ta=100°C
25
-25
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2014-03-01
RN2107CT ~ RN2109CT
Type Name
Marking
Type name
RN2107CT
1
U6
2
3
Type name
1
U7
2
3
RN2108CT
Type name
RN2109CT
1
U8
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that
come into direct contact with devices should be made of anti-static materials.
5
2014-03-01
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