BC214L
BC214L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -100mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
f = 100MHz
V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
I
C
= -2mA, V
CE
= -5V
f = 1KHz
V
CB
= -10V, f = 1MHz
140
10
pF
-0.6
200
2.0
100
140
120
Min.
-30
-45
-5.0
-15
-15
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics *
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
C
OB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Output Capacitance
Small Signal Characteristics
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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©2003 Fairchild Semiconductor Corporation
Rev. I5
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