High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0450
Features
• Ideal for High Performance,
Medium Power, and Low
Noise Applications
• Typical Performance at
1.8 GHz
Medium Power Application
P
1dB
of 19 dBm, Noise
Figure of 1.7 dB, and
Associated Gain of 15 dB
at 3 V and 50 mA
Low Noise Application
Noise Figure of 1.2 dB,
Associated Gain of 13 dB,
and P
1dB
of 11 dBm at 2 V
and 10 mA
• Miniature 4-lead SC-70
(SOT-343) Plastic Package
• Transition Frequency
f
T
= 25 GHz
4-lead SC-70 (SOT-343)
Surface Mount Plastic
Package
Description
Agilent’s HBFP-0450 is a high
performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, medium power, low
noise applications up to 6 GHz.
Pin Configuration
Base
08x
Emitter
Applications
• Driver amplifier for
Cellular
and PCS base stations
Emitter
Collector
Note:
Package marking provides orientation
and identification.
08 = Device code
x = Date code character. A new
character is assigned for each
month, year
• Driver amplifier and medium
power amplifier for
Cellular
and PCS handsets
• High dynamic range LNA for
ISM, wireless data, and
WLL applications
• Oscillator, mixer, and LO
Buffer applications
2
HBFP-0450 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
15.0
4.5
100
450
150
-65 to 150
Thermal Resistance:
θ
jc
= 180°C/W
Notes:
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. P
T
due to Maximum Ratings.
3. Thermal resistance measured using
Liquid Crystal Measurement
method.
Electrical Specifications, T
C
= 25°C
Symbol
Parameters and Test Conditions
I
C
= 1 mA, open base
V
CB
= 5 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
I
C
= 50 mA, V
CE
= 3 V, f = 1.8 GHz
I
C
= 50 mA, V
CE
= 2 V, f = 1.8 GHz
Units
V
nA
µA
—
dB
50
80
19
17
29
16
15.5
1.7
1.8
15
14.5
1.2
1.3
13.0
13
14
11
14
1.7
Min.
4.5
500
100
150
Typ.
Max.
DC Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
I
EBO
h
FE
Collector-Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
RF Characteristics
P
-1 dB
Power Output at 1 dB
Compression Point
IP
3
G
-1dB
F
MIN
G
a
NF
G
a
P
-1 dB
3
rd
Order Intercept Pt at Output
Gain at 1 dB Compression Point
Minimum Noise Figure
Associated Gain
Minimum Noise Figure
Associated Gain
Power Output at 1 dB
Compression Point
I
C
= 50 mA, V
CE
= 3 V, f = 1.8 GHz dBm
I
C
= 50 mA, V
CE
= 3 V, f = 1.8 GHz dBm
I
C
= 50 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 50 mA, V
CE
= 3 V, f = 1.8 GHz
I
C
= 50 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 50 mA, V
CE
= 3 V, f = 1.8 GHz
I
C
= 50 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 10 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 10 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
dB
dB
dB
dB
I
C
= 10 mA, V
CE
= 2 V, f = 1.8 GHz dBm
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
3
HBFP-0450 Typical Performance
4.5
4.0
ASSOCIATED GAIN (dB)
20
18
16
14
12
10
8
6
4
2
0
10
0
2
4
6
8
10
FREQUENCY (GHz)
10 mA
20 mA
50 mA
70 mA
Fmin (dB)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
FREQUENCY (GHz)
1V
2V
3V
3.5
3.0
Fmin (dB)
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
FREQUENCY (GHz)
10 mA
20 mA
50 mA
70 mA
8
Figure 1. Minimum Noise Figure vs.
Frequency and Collector Current
at 2 V.
20
18
ASSOCIATED GAIN (dB)
Figure 2. Associated Gain vs.
Frequency and Collector Current
at 2 V.
5
Figure 3. Minimum Noise Figure vs.
Frequency and Voltage at 20 mA.
20
18
ASSOCIATED GAIN (dB)
16
14
12
10
8
6
4
2
0
0
2
4
6
8
1V
2V
3V
Fmin (dB)
4
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100 120 140
0.9 GHz
1.8 GHz
2.5 GHz
4 GHz
6 GHz
3
2
0.9 GHz
1.8 GHz
2.5 GHz
4 GHz
6 GHz
0
20
40
60
80
100 120 140
1
0
10
FREQUENCY (GHz)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure 4. Associated Gain vs.
Frequency and Voltage at 20 mA.
Figure 5. Minimum Noise Figure vs.
Collector Current at 2 V.
Figure 6. Associated Gain vs.
Collector Current at 2 V.
4
HBFP-0450 Typical Performance
, continued
20
25
25
15
10
0.9
1.8
3
4
5
6
0
20
40
60
80
100
10
20 mA
50 mA
80 mA
10
30
5
5
5
15
0
COLLECTOR CURRENT (mA)
0
0
1
2
3
VOLTAGE (V)
0
-15
-11
-7
-3
1
5
9
0
13
P
in
(dBm)
Figure 7. P
1 dB
vs. Collector Current
and Frequency.
Figure 8. P
1dB
vs. Voltage at 1.8 GHz.
Figure 9. P
out
(dBm), Gain (dB), and
I
c
(mA) vs. P
in
(dBm) at 2 V, 50 mA.
900 MHz:
Γ
S
: Mag: 0.68, Ang: 121°;
Γ
L
: Mag: 0.38, Ang: 171°
1800 MHz:
Γ
S
: Mag: 0.44, Ang: 158°;
Γ
L
: Mag: 0.28, Ang: 159°
30
25
50
P
out
@ 1800 100
Gain @ 1800
I
c
@ 1800
80
30
25
P
out
(dBm) & GAIN (dB)
40
POWER GAIN (dB)
POWER GAIN (dB)
20
15
10
5
0
0
30
60
90
120
20
15
10
5
0
-5
1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
I
c
(mA)
30
60
1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
20
40
10
20
0
-15
-11
-7
-3
1
5
9
0
13
150
0
1
2
3
4
5
P
in
(dBm)
COLLECTOR CURRENT (mA)
VOLTAGE (V)
Figure 10. P
out
(dBm), Gain (dB), and
I
c
(mA) vs. P
in
(dBm) at 3 V, 80 mA.
Γ
S
: Mag: 0.72, Ang: 169°
Γ
L
: Mag: 0.26, Ang: 168°
Figure 11. Power Gain vs. Collector
Current and Frequency at 2 V.
Figure 12. Power Gain vs. Voltage
and Frequency at 50 mA.
I
c
(mA)
15
P
out
(dBm) & GAIN (dB)
20
P
out
@ 900
I
c
@ 900
Gain @ 1800
Gain @ 900
P
out
@ 1800
I
c
@ 1800
75
20
60
P
1dB
(dBm)
P
1dB
(dBm)
15
45
5
HBFP-0450 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 10 mA
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.74
0.73
0.71
0.71
0.72
0.73
0.73
0.74
0.74
0.75
0.76
0.79
0.81
0.84
0.85
0.87
-39
-128
-161
-166
175
167
162
150
140
120
102
83
65
49
35
20
26.20
20.68
16.16
15.29
11.85
10.26
9.37
7.46
5.94
3.67
1.97
0.47
-1.00
-2.33
-3.47
-4.45
20.409
10.813
6.425
5.816
3.913
3.260
2.941
2.360
1.981
1.526
1.255
1.055
0.891
0.765
0.671
0.599
157
107
87
83
68
60
55
44
34
14
-5
-25
-43
-60
-75
-91
-31.37
-22.85
-21.83
-21.72
-20.92
-20.45
-20.18
-19.33
-18.56
-17.02
-15.65
-14.70
-14.07
-13.64
-13.19
-12.84
0.027
0.072
0.081
0.082
0.090
0.095
0.098
0.108
0.118
0.141
0.165
0.184
0.198
0.208
0.219
0.228
71
33
24
23
20
19
19
17
15
8
-2
-15
-28
-40
-53
-67
0.93
0.53
0.37
0.35
0.31
0.30
0.30
0.30
0.30
0.31
0.33
0.37
0.43
0.48
0.52
0.55
-26
-90
-122
-129
-154
-165
-172
175
164
146
126
106
88
72
57
40
HBFP-0450
Noise Parameters:
V
CE
= 2 V, I
C
= 10 mA
Freq.
GHz
0.5
0.9
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
F
min
dB
0.80
0.91
1.08
1.15
1.21
1.36
1.51
1.8
2.09
2.39
Mag
0.36
0.38
0.41
0.46
0.48
0.53
0.59
0.65
0.70
0.73
Γ
opt
Ang
124
140
160
177
-178
-162
-150
-127
-106
-85
R
N
/50
—
0.24
0.16
0.08
0.05
0.05
0.06
0.09
0.25
0.55
1.09
G
a
dB
22.7
18.4
14.7
13.5
12.6
10.9
9.6
7.6
6.2
5.0
S and noise parameters are measured
on a microstrip line made on 0.025 inch
thick alumina carrier. The input
reference plane is at the end of the base
lead, the output reference plane is at the
end of the collector lead. S and noise
parameters include the effect of four
plated through via holes connecting
emitter landing pads on the top of test
carrier to the microstrip ground plane
on the bottom side of the carrier. Two
0.020 inch diameter via holes are placed
within 0.010 inch from each emitter lead
contact point, one via on each side of
that point.
100
Note:
R
N
represents normalized noise resistance.
10
1
IPG
MSG/MAG
0.1
1.00E+08
1.00E+09
FREQUENCY
1.00E+10
Figure 13. HBFP-0450 Power Gain
at 2 V, 10 mA.
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