PD - 94372C
IRF7338
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
D1
D1
N-Ch
V
DSS
12V
P-Ch
-12V
3
6
D2
D2
4
5
P-CHANNEL MOSFET
R
DS(on)
0.034Ω 0.150Ω
Top View
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
N-Channel
12
6.3
5.2
26
2.0
1.3
16
±12
-55 to + 150
± 8.0
P-Channel
-12
-3.0
-2.5
-13
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
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1
6/2/03
IRF7338
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
R
DS(ON)
Static Drain-to-Source On-Resistance
P-Ch
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
12
-12
—
—
—
—
—
—
0.6
-0.40
9.2
3.5
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
0.01
-0.01
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
9.6
7.6
13
26
27
34
25
640
490
340
80
110
58
Max.
—
—
—
—
0.034
0.060
0.150
0.200
1.5
-1.0
—
—
20
-1.0
50
-25
±100
±100
8.6
6.6
1.9
1.3
3.9
1.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 3.0V, I
D
= 2.0A
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 6.0V, I
D
= 6.0A
V
DS
= -6.0V, I
D
= -1.5A
V
DS
= 9.6V, V
GS
= 0V
V
DS
= -9.6 V, V
GS
= 0V
V
DS
= 9.6V, V
GS
= 0V, T
J
= 55°C
V
DS
= -9.6V, V
GS
= 0V, T
J
= 55°C
V
GS
= ± 12V
V
GS
= ± 8.0V
N-Channel
I
D
= 6.0A, V
DS
= 6.0V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -9.6V, V
GS
= -4.5 V
N-Channel
V
DD
= 6.0V, I
D
= 1.0A, R
G
= 6.0Ω,
V
GS
= 4.5V
P-Channel
V
DD
= -6.0V, I
D
= -2.9A, R
G
= 6.0Ω,
V
GS
= -4.5V
pF
N-Channel
V
GS
= 0V, V
DS
= 9.0V, ƒ = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -9.0V, ƒ = 1.0KHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 6.3
—
— -3.0
A
—
—
26
—
— -13
—
— 1.3
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
V
—
— -1.2
T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
—
51
76
N-Channel
ns
—
37
56
T
J
= 25°C, I
F
= 1.7A, di/dt = 100A/µs
—
43
64
P-Channel
nC
T
J
= 25°C, I
F
= -2.9A, di/dt = -100A/µs
—
20
30
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board.
The N-channel MOSFET can withstand 15V V
GS
max
for up to 24 hours over the life of the device.
2
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N-Channel
IRF7338
VGS
7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
BOTTOM 1.5V
TOP
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS
TOP
7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
BOTTOM 1.5V
100
10
1
1.5V
0.1
1
1.5V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100.0
ID, Drain-to-Source Current
(
A)
T J = 25°C
T J = 150°C
10
ISD, Reverse Drain Current (A)
T J = 150°C
10.0
1.0
T J = 25°C
VGS = 0V
0.4
0.6
0.8
1.0
1.2
1.4
1
1.0
2.0
VDS = 10V
20µs PULSE WIDTH
3.0
4.0
0.1
VGS , Gate-to-Source Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7338
2.0
N-Channel
I
D
= 6.3A
R DS (on) , Drain-to-Source On Resistance (
Ω
)
0.12
0.10
R
DS(on)
, Drain-to-Source On Resistance
1.5
0.08
(Normalized)
VGS = 3.0V
1.0
0.06
VGS = 4.5V
0.04
0.5
0.02
V
GS
= 4.5V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.00
0
5
10
15
20
25
30
ID , Drain Current (A)
T
J
, Junction Temperature
(
°
C)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
RDS(on) , Drain-to -Source On Resistance (
Ω
)
0.05
80
60
0.04
Power (W)
0.03
40
ID = 6.3A
20
0.02
3.0
4.0
5.0
6.0
7.0
8.0
0
0.00
0.00
0.00
0.01
0.10
1.00
10.00
VGS, Gate -to -Source Voltage (V)
Time (sec)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Typical Power Vs. Time
4
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N-Channel
IRF7338
12
ID= 6.0A
1000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
= Cgd
= C + Cgd
ds
800
10
8
6
4
2
0
VDS= 12V
C, Capacitance (pF)
Ciss
600
Coss
400
200
Crss
0
1
10
100
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
(Z
thJA
)
0.20
10
0.10
Thermal Response
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
A
1
10
J
= P
DM
x Z
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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