BCX54 ...- BCX56...
NPN Silicon AF Transistors
•
For AF driver and output stages
•
High collector current
•
Low collctor-emitter saturation voltage
•
Complementary types: BCX51...BCX53 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
2
Type
BCX54-16
BCX55
BCX55-16
BCX56
BCX56-10
BCX56-16
Marking
BD
BE
BM
BH
BK
BL
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1
2011-09-19
BCX54 ...- BCX56...
Maximum Ratings
Parameter
Collector-emitter voltage
BCX54
BCX55
BCX56
Collector-base voltage
BCX54
BCX55
BCX56
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
120°C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
45
60
100
5
1
1.5
100
200
2
W
mA
A
Symbol
V
CEO
45
60
80
V
Value
Unit
-
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
15
Junction - soldering point
1)
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-19
BCX54 ...- BCX56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BCX54
I
C
= 10 mA,
I
B
= 0 , BCX55
I
C
= 10 mA,
I
B
= 0 , BCX56
Unit
V
45
60
80
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCX54
I
C
= 100 µA,
I
E
= 0 , BCX55
I
C
= 100 µA,
I
E
= 0 , BCX56
45
60
100
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
-
-
100
160
-
-
-
0.1
20
-
-
250
160
250
-
0.5
1
V
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V, BCX55/BCX56
I
C
= 150 mA,
V
CE
= 2 V, BCX55-10/BCX56-10
I
C
= 150 mA,
V
CE
= 2 V, BCX54-16...BCX56-16
I
C
= 500 mA,
V
CE
= 2 V
25
40
63
100
25
V
CEsat
V
BE(ON)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
-
-
Base-emitter voltage-
I
C
= 500 mA,
V
CE
= 2 V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
3
2011-09-19
BCX54 ...- BCX56...
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 2 V
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
4 BCX 54...56
EHP00449
10
mA
Ι
C
10
100°C
3
5
100 ˚C
25 ˚C
-50 ˚C
10
2
25°C
-50°C
10
5
2
10
5
1
10
1 -1
10
10
0
10
1
10
2
10
3
10
0
0
0.2
0.4
0.6
V
0.8
V
CE sat
Base-emitter saturation voltage
I
C
=
ƒ
(
V
BEsat
),
h
FE
= 10
10
4
mA
BCX 54...56
EHP00450
Collector current
I
C
=
ƒ
(
V
BE
)
V
CE
= 2V
10
4
mA
BCX 54...56
EHP00448
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
5
10
1
10
5
1
5
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE sat
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE
4
2011-09-19
BCX54 ...- BCX56...
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 30 V
10
4
nA
BCX 54...56
EHP00447
Transition frequency
f
T
=
ƒ
(
I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
BCX 54...56
EHP00445
Ι
CB0
10
5
3
max
f
T
5
10
2
5
10
1
5
10
5
10
-1
10
1
10
0
0
10
2
typ
5
0
50
100
˚C
T
A
150
5 10
1
5
10
2
mA
10
3
Ι
C
Total power dissipation
P
tot
=
ƒ
(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
2.4
10
2
W
R
thJS
P
tot
1.6
10
1
1.2
0.8
10
0
0.4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
15
30
45
60
75
90 105 120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
5
2011-09-19
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