30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Chip Device Layout
Features
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
2
Output Third Order Intercept Point (OIP3)
1,2
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm
3
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
VDC
Min.
30.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
440
0.3
Max.
36.0
-
-
-
-
-
-
-
+5.5
0.0
880
-
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ.
Pr
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Mimix Broadband’s two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm. The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s 0.15
µm
GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
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Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
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Absolute Maximum Ratings
+6.0 VDC
950 mA
+0.3 VDC
+15 dBm
-65 to +165
O
C
-55 to MTTF TAble
4
MTTF Table
4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
tio
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Power Amplifier Measurements
0070_S21
DB(|S[2,1]|)
All Sources
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
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0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
0070_S11
DB(|S[1,1]|)
All Sources
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
od
0070 P1dB
42
40
38
36
DB(|S[2,2]|)
All Sources
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
0070, Average IM3, 4.5V, 110mA, +15dBm per tone
28
27
IM3, dBc
25
24
23
22
21
20
19
18
29
30
31
Pr
26
34
32
30
28
26
24
29
30
31
32
33
Frequency, GHz
34
35
36
37
32
33
34
35
36
37
38
Frequency GHz
uc
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
0070_S22
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20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
0070_S12
DB(|S[1,2]|)
All Sources
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
Mechanical Drawing
2.500
(0.098)
32H2BA0070
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341
(0.092)
2.741
2.941
(0.108) (0.116)
2
3
4
5
6
7
8
1.710
(0.067)
1
14
0.0
13
12
11
0.0
(Note: Engineering designator is 32H2BA0070)
Bias Arrangement
Vd1,2
Vg1,2
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V
DIF
2
V
IN
2
5
6
7
8
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.115 mg.
Bond Pad #1 (RF In)
Bond Pad #4 (Vg2)
Bond Pad #7 (V
IN
2)
Bond Pad #11 (Vd4)
Bond Pad #2 (Vg1)
Bond Pad #5 (Vd2)
Bond Pad #8 (RF Out)
Bond Pad #12 (Vg4)
Bond Pad #3 (Vd2)
Bond Pad #6 (V
DIF
1)
Bond Pad #9 (V
IN
1)
Bond Pad #13 (Vd3)
Bond Pad #10 (V
DIF
2)
Bond Pad #14 (Vg3)
od
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341
(0.092)
2
3
4
Bypass Capacitors
- See App Note [3]
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RF Out
1
RF In
14
13
12
11
10
9
Vg3,4
V
IN
1
V
DIF
1
Vd3,4
uc
10
9
2.741 2.941 3.300
(0.108) (0.116) (0.130)
tio
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
1.851
(0.073)
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
App Note [1] Biasing
-
It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The
common bias terminal is Vin, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vin
port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively,
Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6kΩ.
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
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Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
od
Rth
C/W
C/W
C/W
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
MTTF Hours
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App Note [3] Bias Arrangement
-
FITs
E+
E+
E+
E+
E+
E+
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Bias Conditions:
Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110mA
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App Note [2] On-board Detector
-
The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA,
Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate
voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Device Schematic
VD1
VG1
50 Ohm
5 Ohm
5 Ohm
VG2
VD2
5 Ohm
5 Ohm
50 Ohm
5 Ohm
CAP 5 Ohm
400 Ohm
2
1
VDIF2
200 Ohm
3
1
VIN2
90 Ohm
2
5 Ohm
400 Ohm CAP
5 Ohm
450 Ohm
50 Ohm
90 Ohm
50 Ohm
RFin
1
350 Ohm
3
2
3
3
3
1
2
1
2
50 Ohm
400 Ohm
5 Ohm
5 Ohm
50 Ohm
uc
450 Ohm
RFout
350 Ohm
200 Ohm
2
1
3
400 Ohm
5 Ohm
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200 Ohm
200 Ohm
50 Ohm
50 Ohm
5 Ohm
90 Ohm
90 Ohm
VG3
5 Ohm
VG4
5 Ohm
5 Ohm
VD3
od
5 Ohm
VD4
VDIF1 VIN1
Pr
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
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