BCR3KM-12
Triac
Low Power Use
REJ03G0312-0100
Rev.1.00
Aug.20.2004
Features
•
I
T(RMS)
: 3 A
•
V
DRM
: 600 V
•
I
FGT I
, I
RGT
I, I
RGT III
: 15 mA (10 mA)
Note3
•
Insulated Type
•
Planar Passivation Type
•
UL Recognized : Yellow Card No. E223904
File No. E80271
Outline
TO-220FN
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
Rev.1.00, Aug.20.2004, page 1 of 13
BCR3KM-12
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Ratings
3.0
30
3.7
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Ta = 25°C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
I
II
III
I
II
III
Symbol
I
DRM
V
TM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 4.5 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2V
DRM
Junction to case
Note4
Junction to ambient
V
FGT
I
—
—
1.5
V
V
RGT
I
—
—
1.5
V
V
RGT
III
—
—
1.5
V
Note2
Note3
Gate trigger current
I
FGT
I
—
—
15
mA
I
RGT
I
—
—
15
Note3
mA
Note3
I
RGT
III
—
—
15
mA
Gate non-trigger voltage
V
GD
0.2
—
—
V
Thermal resistance
R
th(j-c)
—
—
4.0
°C/W
Thermal resistance
R
th(j-a)
—
—
50
°C/W
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (I
GT
≤
10 mA) is also available. (I
GT
item: 1)
4. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
Rev.1.00, Aug.20.2004, page 2 of 13
BCR3KM-12
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
40
Rated Surge On-State Current
Tj = 25°C
Surge On-State Current (A)
35
30
25
20
15
10
5
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
10
2
7
5
3
2
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
Typical Example
Gate Voltage (V)
10
1
7
5
3
2
P
GM
= 3W
P
G(AV)
= 0.3W
I
GM
=
0.5A
I
RGT III
V
GT
I
FGT I
, I
RGT I
10
0
7
5
3
2
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.2V
10
–1
0
10
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
–
60
–
40
–
20
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
Rev.1.00, Aug.20.2004, page 3 of 13
BCR3KM-12
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
5.0
Transient Thermal Impedance (°C/W)
10
2
7
5
4
3
2
On-State Power Dissipation (W)
4.5
4.0
360° Conduction
3.5
Resistive,
3.0
inductive loads
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10
1
7
5
4
3
2
10
0 2
10
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
120
100
Curves apply regardless
of conduction angle
80
60
40
Ambient Temperature (°C)
140
140
120
100
Case Temperature (°C)
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
80
All fins are black painted
aluminum and greased
60
40
Curves apply regardless
of conduction angle
20
Resistive, inductive loads
Natural convection
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
360° Conduction
20
Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
5
3
2
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–
60
–
40
–
20
0 20 40 60 80 100 120 140
RMS On-State Current (A)
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 4 of 13
BCR3KM-12
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
2
7
5
3
2
10
2
7
5
4
3
2
10
1
7
5
3
2
10
1
–
60
–
40
–
20
0 20 40 60 80 100 120 140
10
0
T
2
+, G+
Typical Example
T
2
–, G–
0 20 40 60 80 100 120 140
–
60
–
40
–
20
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Typical Example
140
120
100
80
60
40
20
0
–
60
–
40
–
20
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
0 20 40 60 80 100120 140
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
4
3
2
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
I
RGT III
I
RGT I
I
FGT I
Typical Example
6V
V
A
330Ω
6V
V
A
330Ω
10
2
7
5
4
3
2
Test Procedure I
6Ω
Test Procedure II
10
1
6V
2
3 4 5 7
10
1
2
3 4 5 7
10
2
A
V
330Ω
10
0
Gate Current Pulse Width (µs)
Test Procedure III
Rev.1.00, Aug.20.2004, page 5 of 13
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