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5962H1222601KXC

产品描述Shifter
产品类别逻辑    逻辑   
文件大小398KB,共5页
制造商Cobham Semiconductor Solutions
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5962H1222601KXC概述

Shifter

5962H1222601KXC规格参数

参数名称属性值
Objectid1354706347
包装说明,
Reach Compliance Codeunknown
逻辑集成电路类型SHIFTER
认证状态Not Qualified
总剂量1M Rad(Si) V

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Standard Products
Datasheet
RadHard-by-Design
RHD5980 Octal Bus Transceiver
Bidirectional Voltage Level Shifter
www.aeroflex.com/RHDseries
April 29, 2014
FEATURES
Bidirectional Voltage translator with two separate supply rails.
Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune
- SEL Immune
>100 MeV-cm
2
/mg
- Neutron Displacement Damage >10
14
neutrons/cm
2
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 24-pin, .614"L x .299"W x .120"Ht
- Weight - 2.0 grams max
Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
Aeroflex’s RHD5980 is a radiation hardened, Octal Level Shifter in a 24-pin SOIC package. The RHD5980
design uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single
event latchup. These characteristics make the RHD5980 especially suited for the harsh environment
encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available
screened in accordance with MIL-PRF-38534 Class K, the RHD5980 is ideal for demanding military and
space applications.
ORGANIZATION AND APPLICATION
The RHD5980 Octal Level Shifter is a radiation hard replacement for the industry standard Bidirectional
Voltage Translators. It is capable of level shifting from the A-to-B or B-to-A input ports for nominal logic
voltages on either port of 5.0 or 3.3 volts.
The RHD5980 can level shift from 5.0V to 3.3V or 3.3V to 5.0V, and also buffer from 5.0V to 5.0V or 3.3V
to 3.3V. Ports A and B can be inputs or outputs depending on the value of DIR_AB_H.
Control inputs are the standard tri-state enable (OE_L active low) and direction control DIR_AB_H where
a HIGH logic steers data from A-to-B and active LOW steers the data from B-to-A.
The control inputs are powered from V
CCA
and accept inputs at the A bus logic levels (either 3.3V or 5.0V).
All delay parameters are less than 30nS over full -55°C to +125°C military temperature range and logic
levels. All bus and control inputs have Schmitt trigger buffers to implement low-to-high transition at
approximately 60% of the corresponding logic supply and high-to-low transition at approximately 40%
providing considerable noise immunity for slow input signals
The devices will not latch with SEU events to above 100 MeV-cm
2
/mg. Total dose degradation is minimal
to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 10
14
neutrons per cm
2
range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5980 Rev A
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