OFF-THE-SHELF
New DC to Millimeterwave ICs & Modules from Hittite
A
UGUST
2007
INSIDE.....
T
RUE
RMS P
OWER
D
ETECTOR IS
B
EST
-
IN
-C
LASS
Covers 100 MHz to 3.9 GHz with 60 to 70 dB Dynamic Range
35
N
EW
P
RODUCTS
R
ELEASED
!
Product Showcase
Low Noise Amplifier Module
The first True RMS-responding Power
Detector within Hittite’s Power Detector
product line is now available. The
HMC610LP4E is designed to provide
wide dynamic range signal power
measurement in excess of 60 dB by
converting RF signals at its differential
input to an accurately scaled linear-
in-dB output response, representing
the Root-Mean-Square (RMS) of the
input waveform.
3.2
2.8
2.4
V
OUT
(V)
2
1.6
1.2
0.8
0.4
0
-50
CW
IS95 Reverse Link
IS95 Reverse Link (3-Channel)
CDMA2000 (3-Channel)
WCDMA TM1-64
-40
-30
-20
-10
0
10
HMC-C045
• 1.8 - 4.2 GHz
• Ultra-Low NF: 0.7 dB
• Single +12V Supply
See Page
2
INPUT POWER (dBm)
The HMC610LP4E delivers extremely
Output Voltage vs. Input Power
high dynamic range and conversion
with Different Waveforms, Fin= 900 MHz
accuracy over an input RF frequency
range of 100 MHz to 3.9 GHz, and is ideal for the measurement of complex modulated
waveforms with large, time varying crest factors of the type found in high capacity
(Continued on page 5)
14 N
EW
D
IGITAL
P
HASE
S
HIFTER
P
RODUCTS
R
ELEASED
Combine High Linearity & Low RMS Phase Error from 2.5 to 18.5 GHz
Hittite is pleased to introduce a new family of 4-bit, 5-bit and
6-bit Digital Phase Shifters covering frequency bands from
2.5 to 18.5 GHz with 14 products.
The HMC649LP6E is a 6-bit Digital Phase Shifter which
is rated from 3 to 6 GHz. The HMC649LP6E exhibits very low
RMS phase error of 3 degrees and peak to peak insertion
HMC543 & HMC543LC4B
loss variation of only ±0.8 dB across all phase states. The
HMC649LP6E delivers +29 dBm Input P1dB and +44 dBm Input IP3, and is housed
in a compact, RoHS compliant 6x6 mm plastic leadless SMT package
The HMC642LC5 is a 6-bit Digital Phase Shifter which is rated from 9 to 12.5 GHz.
The HMC642LC5 exhibits a low RMS phase error of 5 degrees and peak to peak
insertion loss variation of only ±1 dB across all phase states. The HMC642LC5 delivers
+28 dBm Input P1dB, and +42 dBm Input IP3, and is housed in a RoHS compliant
(Continued on page 6)
x2 Active Frequency Multiplier
HMC561
• 8 - 21 GHz Fout
• Low Input Drive: +5 dBm
• High Output Power: +17 dBm
See Page
3
40W Failsafe Switch
N
EW
D
IGITAL
VGA P
RODUCT
L
INE
C
OVERS
DC - 6 GH
Z
Offers Outstanding Gain Accuracy & Linearity
HMC646LP2E
• Low Insertion Loss: 0.4 dB
• High Input IP3: +75 dBm
• Single Control: 0/+3V to 0/+8V
See Page
4
Hittite’s new Digitally Controlled Variable Gain Amplifiers
(VGAs) are alone in the marketplace with their combination
of high linearity, wide bandwidth, 0.5 dB gain resolution, dual
mode control circuitry, and operation to near DC.
The HMC625LP5E is a DC to 6 GHz Digital VGA which
combines the functionality of a 6-bit digital attenuator with an internally matched,
wideband amplifier in a single leadless QFN package. This highly integrated solution
features a gain control range of -13.5 to +18 dB in 0.5 dB steps, and delivers up to
+19 dBm of output P1dB, which is independent of the gain control setting.
The HMC626LP5E is a high gain DC to 1 GHz Digital VGA which features a gain control
range of +8.5 to +40 dB in 0.5 dB steps, and a low 4 dB noise figure in its maximum gain
state.
New SiGe & GaAs SC70 Gain
Blocks Cover DC - 8 GHz!
See Page
5
(Continued on page 6)
Order On-line at: www.hittite.com
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Boston • Colorado Springs • Istanbul • London • Munich • Ottawa • Seoul • Shanghai
A
MPLIFIERS
, M
IXERS
, M
ULTIPLIERS
& VCO
S
FOR
HMC594LC3B & HMC609LC4
GaAs PHEMT MMIC LNAs, 2 - 4 GHz
Consistent Gain & IP3
Gain & Output IP3
40
35
GAIN & OUTPUT IP3 (dB)
30
25
20
15
10
HMC609LC4 OIP3
HMC549LC3B OIP3
HMC609LC4 GAIN
HMC594LC3B GAIN
Features
Gain Flatness to ±0.4 dB
Noise Figure to 3.5 dB
Gain to 20 dB
5
Output IP3 to +36.5 dBm
50 Ohm Matched I/Os
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
FREQUENCY (GHz)
The HMC594LC3B and HMC609LC4
are GaAs PHEMT MMIC Low Noise
Amplifiers (LNA) housed in leadless
RoHS Compliant SMT packages
which operate from 2 to 4 GHz.
Both LNAs feature extremely flat
performance characteristics, and
output IP3 of +36 dBm across the
operating band. These versatile LNAs
are ideal for compact communication
and sensor applications due to their
small size, consistent output power
and DC blocked RF I/O’s. These LNAs
are also available in chip form as the
HMC594 and HMC609.
OFF-THE-SHELF
HMC608 & HMC608LC4
MMIC Medium Power Amplifiers, 9.5 - 11.5 GHz
High Gain & Power Saving Mode
HMC608 Gain & Output P1dB
36
32
Features
Output P1dB to +28 dBm
Output IP3: +33 dBm
Gain to 33 dB
Supply: +5V @ 310 mA
50 Ohm Matched I/Os
Chip & SMT Package Available
28
24
GAIN
P1dB
20
9.5
10
10.5
FREQUENCY (GHz)
11
11.5
The HMC608 and HMC608LC4 are
high dynamic range GaAs PHEMT
MMIC Medium Power Amplifiers
which feature a high gain mode and a
low gain mode of operation. Operating
from 9.5 to 11.5 GHz, these amplifiers
provide up to 33 dB of gain, +27.5
dBm of saturated power, and +33
dBm output IP3. The RF I/Os are DC
blocked and matched to 50 Ohms.
The HMC608LC4 house in a 4x4 mm
ceramic SMT package.
HMC-C045
GAIN (dB) & P1dB (dBm)
GaAs PHEMT Low Noise Amplifier Module, 1.8 - 4.2 GHz
0.7 dB Noise Figure
Gain & Noise Figure
30
25
3
2.5
NOISE FIGURE (dB)
2
1.5
1
0.5
0
2.05
2.3
2.55
2.8
3.05
3.3
3.55
3.8
4.05
GAIN (dB)
Features
Noise Figure: 0.7 dB @ 2.4 GHz
High Gain: 26 dB
Output IP3: +26 dBm
P1dB Output Power: +15.5 dBm
Hermetically Sealed Module
Removable Connectors
20
15
10
5
0
1.8
Vpd (Vdc)
The HMC-C045 is a GaAs PHEMT
Low Noise Amplifier in a miniature,
hermetic module which operates
between 1.8 and 4.2 GHz. This high
dynamic range, low noise amplifier
module provides 26 dB of gain, sub-1
dB noise figure and up to +26 dBm of
output IP3. The DC supply is internally
regulated and operates from a single
positive supply between +8V and
+15V. The amplifier I/Os are internally
matched to 50 Ohms and DC blocked
for robust performance.
2
AUGUST 2007
VISIT US AT:
www.hittite.com
M
ICROWAVE
R
ADIO
, T
ELECOM
& T
EST
E
QUIPMENT
HMC258LC3B
Sub-Harmonic Mixer, 14.5 - 19.5 GHz
Ideal for Microwave Radio
Conversion Gain vs. LO Drive
0
Features
Sub-harmonically Pumped (x2) LO
Integrated LO Amplifier:
0 dBm LO Drive
High 2LO/RF Isolation: >45 dB
Wide IF Bandwidth: DC - 3.5 GHz
No External Matching Required
CONVERSION GAIN (dB)
-5
-10
-15
LO = 0dBm
LO = +2dBm
LO = +4dBm
-20
-25
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
The HMC258LC3B is a 14.5 - 19.5
GHz surface mount sub-harmonically
pumped (x2) MMIC mixer with an inte-
grated LO amplifier in a SMT leadless
ceramic package. At 45 dB the 2LO
to RF isolation eliminates the need
for additional filtering. The integrated
LO amplifier is a single bias (+5V)
two stage design with only 0 dBm
drive requirement. The HMC258LC3B
requires no external matching compo-
nents, and is compatible with RoHS
SMT manufacturing techniques.
HMC561
GaAs MMIC x2 Active Frequency Multiplier, 8 - 21 GHz Output
Wideband, Low Input Drive
Output Power vs. Input Drive
20
15
10
5
0
-5
-10
8
11.2
14.5
FREQUENCY (GHz)
17.7
21
-2 dBm
0 dBm
2 dBm
4 dBm
6 dBm
OFF-THE-SHELF
Features
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
High Fo Isolation:
15 dBc @ Fout = 16 GHz
Low SSB Phase Noise:
-139 dBc/Hz @ 100 kHz
The HMC561 is a x2 active broadband
frequency multiplier chip utilizing GaAs
PHEMT technology. When driven by a
+5 dBm signal, the multiplier provides
+17 dBm typical output power from 8 to
21 GHz and the Fo and 3Fo isolations
are 15 dBc at 16 GHz. The HMC561
is ideal for use in LO multiplier chains
for Pt to Pt & VSAT Radios yielding
reduced parts count vs. traditional
approaches. The low additive SSB
Phase Noise of -139 dBc/Hz at 100
kHz offset helps maintain good system
noise performance.
HMC512LP5E
OUTPUT POWER (dBm)
MMIC VCO with Fo/2 & ÷4 Outputs, 9.6 - 10.8 GHz
Excellent Phase Noise
The HMC512LP5E is a GaAs InGaP
HBT MMIC VCO. The HMC512LP5E
integrates a resonator, negative
resistance device, varactor diode
and features half frequency and
divide-by-4 outputs. The VCOs phase
noise performance is excellent over
temperature, shock, and process due
to the oscillator’s monolithic structure.
Power output is +9 dBm typical from
a +5V supply. The prescaler and RF/2
functions can be disabled to conserve
current if not required. This MMIC
VCO is packaged in a leadless QFN
5x5 mm SMT, and requires no external
matching components.
Output Frequency vs. Tuning Voltage
5.8
OUTPUT FREQUENCY (GHz)
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
0
1
2
3
4
5
6
7
8
9
10
11 12
13
TUNING VOLTAGE (Volts)
+25C
+85C
-40C
Features
Triple Output: Fo= 9.6 - 10.8 GHz
Fo/2= 4.8 - 5.4 GHz
Fo/4= 2.4 - 2.7 GHz
Pout: +9 dBm
Low SSB Phase Noise:
-110 dBc/Hz @100 kHz
No External Resonator Needed
VISIT US AT:
www.hittite.com
AUGUST 2007
3
SMT LNA
S
, G
AIN
B
LOCKS
, D
OWNCONVERTERS
& S
WITCHES
HMC605LP3E & HMC593LP3E
MMIC LNAs w/ Bypass Mode, 2.3 to 3.8 GHz
Ideal for WiBro & WiMAX
Functional Diagram
Features
Integrated Bypass Path
1 dB Noise Figure
Output IP3 to +35 dBm
Gain: 19 to 20 dB
50 Ohm Matched I/Os
The HMC605LP3E and HMC593LP3E
are high dynamic range GaAs MMIC
Low Noise Amplifiers that integrate
a low loss bypass mode on the IC.
These LNAs are ideal for WiBro &
WiMAX receivers operating from
2.3 to 2.7 GHz and 3.3 to 3.8 GHz
and provides 1.0 dB noise figure,
20 dB of gain and +31 dBm IP3, with
no external matching or switching
components required. A single control
line is used to switch between LNA
mode and a low 2.0 dB loss bypass
mode, which reduces the current
consumption to 10 μA.
OFF-THE-SHELF
HMC334LP4E
SiGe Wideband Downconverter, 0.8 - 2.7 GHz
Low Noise, Excellent Linearity
Input IP3, Noise Figure
& Conversion Gain
IP3 (dBm), NOISE FIGURE (dB) & GAIN (dB)
40
30
Features
SSB Noise Figure: 10 dB
Conversion Loss: 0 dB
LO to RF Isolation: 48 dB
Single-Ended LO Drive: 0 dBm
Input IP3: +26 dBm
20
INPUT IP3
NOISE FIGURE
GAIN
10
0
-10
0.8
1.3
1.8
FREQUENCY (GHz)
2.2
2.7
The HMC334LP4E is a low noise,
wideband
downconverter
RFIC
which is ideal for Cellular/3G and
WiMAX/4G applications from 0.8
to 2.7 GHz. The LO input accepts
drive levels from -6 to +6 dBm while
the RFIC provides 48 dB of LO to
RF isolation, and 0 dB conversion
loss. The HMC334LP4E will support
an IF output bandwidth of up to
600 MHz and provides excellent
performance in the presence of high
level “Blocker” signals, making it ideal
for receiver applications in demanding
environments.
HMC646LP2E
GaAs MMIC 40W Failsafe Switch, 0.1 - 2.1 GHz
High Power, Failsafe Operation
Input IP3 & Input P1dB
TX Port @ 2015 MHz
80
75
IP3 (dB) & P1dB (dBm)
70
65
60
55
50
45
40
3
4
5
6
Vdd (Volts)
7
8
INPUT IP3
INPUT P1dB
Features
+46 dBm Input P0.1dB @ 10% D.C.
Low Insertion Loss: 0.4 dB
High Input IP3: +75 dBm
Single Control: 0/+3V to 0/+8V
Tx Path “on” When Unpowered
2x2mm DFN Package
The HMC646LP2E is an SPDT switch
in a leadless DFN surface mount
plastic package for use in T/R and
LNA protection applications which
require very low distortion and high
power handling of up to 40 watts with
less than 10% duty cycle. This robust
switch can control signals from 100 -
2100 MHz and is ideal for TD-SCDMA
& 3G repeaters, mobile 2-way radio,
automotive telematics, and satellite
subscriber terminal applications. The
design provides exceptional P0.1dB
of +46 dBm and +75 dBm IIP3 on
the Transmit (Tx) port. The failsafe
topology provides a low loss path
from Tx to COM, when no DC power
is available.
4
AUGUST 2007
VISIT US AT:
www.hittite.com
FOR
C
ELLULAR
/3G, W
I
MAX/4G & T
EST
E
QUIPMENT
HMC311 / 474 / 476 / 478SC70E
SC70 Packaged Gain Blocks, DC to 8 GHz
New SiGe & GaAs Gain Blocks Feature 2.0 x 2.1mm Footprint
The HMC311SC70E, HMC474SC70E, HMC476SC70E and HMC478SC70E are a
family of SiGe and GaAs Heterojunction Bipolar Transistor (HBT) Gain Block MMIC
SMT amplifiers covering DC to 8 GHz.
These amplifiers can be used as cascadable 50 Ohm RF/IF gain stages as well as
LO or PA drivers with up to +17 dBm output power. The Darlington topology results
in reduced sensitivity to normal process variations and excellent gain stability over
temperature while requiring a minimal number of external bias components. The
HMC311SC70E offers 15 dB of gain with a +30 dBm output IP3 at 850 MHz while
requiring only 62 mA from a single positive supply. All four of these new gain blocks
are housed in industry standard and footprint compatible SC70 6-Lead packages.
New SC70 Packaged Gain Block Products
Part Number
HMC474SC70E
HMC476SC70E
Frequency
(GHz)
DC - 6
DC - 6
DC - 8
DC - 4
Function
SiGe Gain Block
SiGe Gain Block
HBT Gain Block
SiGe Gain Block
Gain
(dB)
15
19
15
24
OIP3
(dBm)
20
24
30
31
NF
(dB)
3
2.5
5
2.5
P1dB
(dBm)
8
12
15
16
Bias Supply
+3V @ 25mA
+5V @ 35mA
Features
Output P1dB to +16 dBm
Output IP3 to +31 dBm
Gain to 23 dB
Cascadable 50 Ohm I/Os
Single Supply: +3V to +12V
Applications
Cellular / 3G
WiBro / WiMAX / 4G
Microwave Radio &
Test Equipment
OFF-THE-SHELF
HMC311SC70E
HMC478SC70E
+5V @ 54mA
+5V @ 64mA
T
RUE
RMS D
ETECTOR IS
B
EST
-
IN
-C
LASS
...
(continued from page 1)
wireless
and
wire-line
communication
networks.
The HMC610LP4E features a
best-in-class ±1 dB dynamic
range in excess of 70 dB at
900 MHz (-62 to +10 dBm)
and 69 dB at 2.2 GHz (-59 to
+10 dBm). At 2.7 and 3.5 GHz, the HMC610LP4E exhibits
± 1 dB dynamic ranges of 63 and 46 dB respectively, with
excellent stability of ±0.5 dB error over its -40°C to +85°C
operating temperature range. When used in RMS detector
mode, the HMC610LP4E provides a nominal logarithmic
slope of 37 mV/dB and a nominal intercept of -70 dBm for
frequencies up to 2 GHz.
The HMC610LP4E output fall time is 500 ns (1.9 to 0.2V),
while the rise time is about 10 ns (0.2 to 1.9V), and this is
ideal to support the proper detection of complex waveforms
with QAM, QPSK and OFDM modulation schemes. The
HMC610LP4E is also capable of operating accurately up
to 3.9 GHz, and with any type of input signal waveform or
modulation scheme applied to its input. For example, tests
with single and multiple carrier versions of WCDMA,
CDMA2000 and IS95 reverse link show that the
HMC610LP4E exhibits less than 0.3 dB of error up to input
power levels of +5 dBm. The HMC610LP4E RF input is
externally matched to 50 Ohms, and the device operates
from a +5V single supply while consuming 65mA.
Also released is the HMC611LP4E Logarithmic Detector/
Controller which delivers extremely high dynamic range
and conversion accuracy over an input frequency range of
1 MHz to 10 GHz. The HMC611LP4E features ±1 dB dynamic
range of greater than 60 dB from 900 MHz to 5.8 GHz. Ideal
for applications such as RF transmitter power amplifier
control, RSSI measurement in cellular basestations, radio
link and radar, the HMC611LP4E exhibits output rise and
fall times of about 8ns.
The HMC610LP4E and HMC611LP4E are housed in 4x4
mm plastic QFN packages, and are specified for operation
over the -40°C to +85°C
temperature range. Detailed
datasheets for these products
may be found at www.hittite.
com. Product and evaluation
kits are available from stock.
Bias
Successive
Detection
Circuit
Detector
Output
Processing
Circuit
HMC610LP4E Functional Diagram
VISIT US AT:
www.hittite.com
AUGUST 2007
5
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