High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0405
Features
• Ideal for High Gain, Low
Current Applications
• Typical Performance at
1.8 GHz
Associated Gain of 18 dB
and Noise Figure of 1.2 dB
at 2 V and 2 mA
P
1dB
of 5 dBm at 2 V and
5 mA
• Miniature 4-lead SC-70
(SOT-343) Plastic Package
• Transition Frequency
f
T
= 25 GHz
Surface Mount Plastic
Description
Package/ SOT-343 (SC-70)
Agilent’s HBFP-0405 is a high
Outline 4T
performance isolated collector
silicon bipolar junction transistor
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0405 provides an associated
gain of 18 dB, noise figure of
1.2 dB, and P
1dB
of 5 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0405 is ideal for
cellular/
PCS
as well as for
C-Band and
Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Pin Configuration
02x
Base
Emitter
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for
TV Delivery
and TVRO Systems up to
12 GHz
Emitter
Collector
Note:
Package marking provides orientation
and identification.
02 = Device code
x = Date code character. A new
character is assigned for each
month, year
2
HBFP-0405 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
15.0
4.5
12
54
150
-65 to 150
Thermal Resistance:
θ
jc
= 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. P
T
limited by maximum ratings.
Electrical Specifications, T
C
= 25°C
Symbol
Parameters and Test Conditions
I
C
= 1 mA, open base
V
CB
= 5 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 2 mA
I
C
= 2 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 2 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
Units
V
nA
µA
—
dB
dB
dB
16.5
50
80
1.2
18
17
5
Min.
4.5
150
15
150
1.5
Typ.
Max.
DC Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
I
EBO
h
FE
Collector-Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
RF Characteristics
F
MIN
Minimum Noise Figure
G
a
|S
21
|
2
P
-1 dB
Associated Gain
Insertion Power Gain
Power Output @ 1 dB
Compression Point
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz dBm
3
HBFP-0405 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 2 mA, T
C
= 25°C
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.910
0.889
0.855
0.841
0.774
0.730
0.701
0.634
0.570
0.521
0.477
0.443
0.412
0.386
0.372
0.369
0.366
0.370
0.387
0.405
0.421
0.437
0.454
-4.2
-21.2
-37.6
-41.4
-60.9
-72.0
-79.4
-96.0
-112.3
-127.0
-141.2
-154.7
-168.7
177.1
162.2
147.7
130.7
116.2
102.9
91.4
80.9
70.5
60.3
16.5
16.3
15.7
15.6
14.8
14.3
13.9
13.0
12.0
11.2
10.4
9.7
9.0
8.5
7.9
7.5
7.1
6.6
6.2
5.7
5.3
4.9
4.4
6.665
6.496
6.101
5.993
5.484
5.164
4.964
4.450
3.996
3.620
3.320
3.047
2.829
2.646
2.493
2.371
2.258
2.141
2.042
1.937
1.834
1.753
1.669
176.2
160.6
146.0
142.5
125.9
116.8
110.9
97.0
84.7
73.4
62.9
53.6
44.2
34.9
25.6
16.8
8.1
-1.3
-9.8
-18.3
-26.6
-35.2
-43.7
-49.6
-35.6
-30.4
-29.5
-26.4
-25.1
-24.5
-23.4
-22.7
-22.3
-21.9
-21.8
-21.5
-21.3
-21.0
-20.7
-20.4
-20.0
-19.8
-19.5
-19.3
-19.0
-18.8
0.003
0.017
0.030
0.033
0.048
0.055
0.059
0.068
0.073
0.077
0.080
0.082
0.084
0.087
0.089
0.093
0.096
0.100
0.103
0.105
0.109
0.112
0.115
88.5
80.5
71.9
69.6
57.5
50.6
46.4
37.0
28.7
21.7
15.6
10.7
6.0
1.6
-2.1
-7.0
-10.7
-14.7
-19.2
-23.6
-27.9
-32.4
-37.0
0.995
0.982
0.951
0.937
0.880
0.843
0.817
0.758
0.708
0.669
0.634
0.613
0.591
0.571
0.550
0.525
0.496
0.471
0.444
0.425
0.411
0.398
0.385
-2.2
-10.5
-18.8
-20.9
-30.8
-36.4
-39.8
-47.8
-54.9
-60.9
-66.4
-71.5
-76.4
-80.8
-86.1
-90.5
-95.2
-100.2
-106.7
-113.9
-121.3
-127.7
-133.5
HBFP-0405
Noise Parameters:
V
CE
= 2 V, I
C
= 2 mA
Freq.
GHz
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
F
min
dB
1.07
1.09
1.19
1.25
1.29
1.39
1.48
1.57
1.70
1.78
1.87
2.00
2.10
2.18
2.29
2.35
2.50
2.65
2.76
2.93
2.94
Mag
0.569
0.558
0.504
0.474
0.456
0.423
0.391
0.352
0.318
0.290
0.257
0.215
0.179
0.157
0.125
0.116
0.140
0.163
0.191
0.226
0.254
Γ
opt
Ang
9.3
11.6
22.0
28.7
33.6
48.2
59.3
72.1
83.1
93.9
107.3
118.3
133.7
153.1
-179.2
-154.8
-123.4
-104.1
-89.2
-73.4
-61.4
R
N
G
a
dB
23.46
22.67
19.64
18.28
17.50
15.91
14.39
13.29
12.29
11.43
10.71
10.03
9.47
8.97
8.50
7.98
7.63
7.21
6.81
6.51
6.16
Ω
20.9
20.6
19.2
18.5
18.0
16.6
15.6
14.2
13.0
12.1
10.9
10.5
10.4
10.2
11.0
12.0
13.7
15.9
18.6
22.3
26.3
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
4
HBFP-0405 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 5 mA, T
C
= 25°C
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.819
0.775
0.704
0.681
0.585
0.531
0.500
0.440
0.392
0.360
0.334
0.315
0.302
0.295
0.301
0.311
0.327
0.346
0.369
0.392
0.410
0.428
0.446
-6.2
-30.3
-52.4
-57.2
-81.5
-94.5
-102.7
-121.3
-138.9
-154.1
-168.9
177.0
162.5
148.1
133.7
120.4
105.9
94.0
83.4
74.1
65.6
56.9
48.2
22.0
21.5
20.6
20.3
18.8
17.9
17.3
15.9
14.6
13.5
12.5
11.6
10.9
10.2
9.6
9.0
8.5
8.0
7.6
7.1
6.6
6.2
5.7
12.630
11.912
10.664
10.308
8.689
7.817
7.306
6.208
5.362
4.716
4.214
3.814
3.491
3.229
3.010
2.827
2.668
2.520
2.389
2.261
2.141
2.038
1.937
174.5
153.5
134.9
130.7
111.9
102.5
96.7
83.7
72.4
62.3
52.9
44.3
35.7
27.4
19.0
10.8
2.6
-5.8
-13.8
-21.9
-29.9
-38.0
-46.0
-50.2
-36.2
-31.5
-30.8
-28.1
-27.2
-26.6
-25.6
-24.8
-24.2
-23.6
-23.1
-22.5
-22.0
-21.5
-21.0
-20.5
-20.0
-19.5
-19.1
-18.7
-18.4
-18.1
0.003
0.016
0.027
0.029
0.039
0.044
0.047
0.053
0.057
0.061
0.066
0.070
0.075
0.079
0.084
0.089
0.095
0.101
0.106
0.110
0.116
0.120
0.124
87.8
77.1
67.3
64.9
54.0
49.0
46.0
39.9
34.6
30.4
26.5
23.0
19.0
15.1
11.1
6.4
2.1
-3.0
-7.7
-12.8
-18.0
-23.1
-28.5
0.990
0.959
0.897
0.875
0.783
0.733
0.703
0.641
0.597
0.566
0.541
0.528
0.513
0.499
0.484
0.463
0.439
0.414
0.389
0.370
0.357
0.345
0.334
-2.8
-13.4
-23.3
-25.5
-35.2
-40.1
-43.0
-49.4
-55.0
-59.7
-64.2
-68.6
-73.0
-77.0
-82.0
-86.1
-90.5
-95.4
-101.6
-108.5
-115.8
-122.3
-127.9
HBFP-0405
Noise Parameters:
V
CE
= 2 V, I
C
= 5 mA
Freq.
GHz
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
F
min
dB
1.36
1.38
1.46
1.52
1.55
1.65
1.73
1.79
1.93
1.99
2.08
2.18
2.32
2.37
2.48
2.56
2.69
2.85
2.99
3.10
3.12
Mag
0.386
0.375
0.333
0.305
0.292
0.246
0.208
0.187
0.153
0.123
0.104
0.065
0.051
0.068
0.101
0.133
0.177
0.212
0.246
0.282
0.314
Γ
opt
Ang
2.8
5.0
17.7
25.5
31.9
50.0
59.9
73.6
85.6
100.2
119.5
141.5
-169.0
-129.9
-96.3
-82.9
-71.2
-62.8
-54.1
-46.1
-37.3
R
N
G
a
dB
25.59
24.76
21.56
20.12
19.29
17.61
16.04
14.81
13.76
12.90
12.12
11.45
10.87
10.32
9.82
9.33
8.92
8.50
8.10
7.77
7.41
Ω
17.0
16.8
16.2
15.6
15.3
13.8
13.1
12.6
12.0
11.8
11.3
12.0
12.7
13.5
15.2
17.0
19.7
22.8
26.7
30.9
35.2
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
5
HBFP-0405 Typical Performance
30
25
20
15
10
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
2 mA
5 mA
10 mA
15 mA
5
30
25
20
15
10
5
0
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0 2
4
6
8 10 12 14 16 18 20 22
ASSOCIATED GAIN (dB)
4
3
2
2 mA
5 mA
10 mA
15 mA
0
2
4
6
8
10
1
0
FREQUENCY (GHz)
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
Figure 1. Associated Gain vs.
Frequency and Collector Current
at 2 V.
3.50
3.00
Figure 2. Noise Figure vs.
Frequency and Collector Current
at V
CE
= 2 V.
30
25
20
15
10
5
0
0.9 GHz
Figure 3. Associated Gain vs.
Collector Current and Frequency
at 2 V.
2.50
0.9 GHz
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
NOISE FIGURE (dB)
2.50
2.00
1.50
1.00
0.50
0
0
2
4
6
8
10
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
12
14
16
COLLECTOR CURRENT (mA)
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2.00
1.8 GHz
2.5 GHz
3 GHz
1.50
4 GHz
5 GHz
6 GHz
1.00
0.50
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VOLTAGE (V)
VOLTAGE (V)
Figure 4. Noise Figure vs. Collector
Current and Frequency at 2 V.
Figure 5. Associated Gain vs. Voltage
and Frequency at 2 mA.
Figure 6. Noise Figure vs. Voltage
and Frequency at 2 mA.
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