operation of the device at conditions beyond those
indicated in the operational sections of this data sheet
is not implied.
Unless otherwise specified all specifications are at
25C and V
DD
=5.0V.
R03
www.ixysic.com
3
I
NTEGRATED
C
IRCUITS
D
IVISION
CPC5622
1.2 Performance
Parameter
DC Characteristics
Operating Voltage V
DD
Operating Current I
DD
Operating Voltage V
DDL
Operating Current I
DDL
On-hook Characteristics
Metallic DC Resistance
Longitudinal DC Resistance
Ringing Signal Detect Level
Ringing Signal Detect Level
Snoop Circuit Frequency Response
Snoop Circuit CMRR
1
Ringer Equivalence
Longitudinal Balance
Off-Hook Characteristics
AC Impedance
Longitudinal Balance
1
Return Loss
Transmit and Receive Characteristics
Frequency Response
Transhybrid Loss
1
Minimum
3.0
-
2.8
-
10
10
5
28
166
-
-
60
-
60
-
30
-
Typical
-
9
-
7
-
-
-
-
-
40
0.01B
-
600
-
26
-
36
Maximum
5.5
13
3.2
8
-
-
-
-
>4000
-
-
-
-
-
-
4000
-
Unit
V
mA
V
mA
M
M
V
rms
V
rms
Hz
dB
REN
dB
dB
dB
Hz
dB
Conditions
Low-voltage side
Low-voltage side
Line side, derived from tip and ring
Line side, drawn from tip and ring while off-hook
Tip to ring, 100 Vdc applied
150 Vdc applied from tip and ring to Earth ground
68 Hz ringing signal applied across tip and ring
15 Hz ringing signal applied across tip and ring
-3 dB corner frequency @ 166 Hz, in IXYS Integrated
Circuits Division application circuit
120 V
RMS
60 Hz common-mode signal across tip and
ring
Per FCC part 68
Tip to ring, using resistive termination application circuit
Per FCC part 68
Into 600
at 1800 Hz
-3 dB corner frequency 30 Hz
Into 600
at 1800 Hz, with C18 in the resistive
termination application circuit
30 Hz to 4 kHz,
Resistive termination application circuit with MODE
de-asserted.
Reactive termination application circuit with MODE
asserted.
4 kHz flat bandwidth
-3 dBm, 600 Hz, 2
nd
harmonic
Single-tone sine wave. Or 0 dBm into 600
.
Single-tone sine wave. Or 0 dBm into 600
Sink and source
Transmit and Receive Insertion Loss
-0.4
0
0.4
dB
Average In-band Noise
Harmonic Distortion
Transmit Level
Receive Level
RX+/RX- Output Drive Current
TX+/TX- Input Impedance
Isolation Characteristics
Isolation Voltage
Surge Rise Time
MODE and OH Control Logic Inputs
Input Low Voltage
Input High Voltage
High Level Input Current
Low Level Input Current
RING and RING2 Output Logic Levels
Output High Voltage
Output Low Voltage
-
-
-
-
-
60
3000
2000
-
2.0
-
-
V
DD
-0.4
-
-126
-80
-
-
-
90
-
-
-
-
-
-
-
-
-
-
2.2
2.2
0.5
120
-
-
0.8
-
-120
-120
-
0.4
dBm/Hz
dB
V
P-P
V
P-P
mA
k
V
rms
V/S
V
IL
V
IH
A
A
V
V
Line side to Low-voltage side, one minute duration
No damage via tip and ring
V
IN
V
DD
V
IN
= GND
I
OUT
= -400
A
I
OUT
= 1 mA
Specifications subject to change without notice. All performance characteristics based on the use of IXYS Integrated Circuits Division application circuits.
Functional operation of the device at conditions beyond those specified here is not implied.
NOTES: 1) This parameter is layout and component tolerance dependent.
三星刚出的旗舰新机Galaxy S III固然不错,但是高昂的价格不是每个人都能承受的起。昨天我们报道了一部山寨版的i9300,而现在该机价格和具体配置已经全部出炉。 这款山寨的Galaxy S III名叫HDC Galaxy S3,其外形甚至UI界面都与原型机异常相似。该机的三围为138×70×9.2mm,配备了一块4.7寸触摸屏,分辨率只有800×480像素。
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