TSOP11..TB1
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
TSOP1130TB1
TSOP1136TB1
TSOP1138TB1
TSOP1156TB1
f
0
30 kHz
36 kHz
38 kHz
56 kHz
Type
f
0
TSOP1133TB1 33 kHz
TSOP1137TB1 36.7 kHz
TSOP1140TB1 40 kHz
Description
The TSOP11..TB1 – series are miniaturized receivers for
infrared remote control systems. PIN diode and preampli-
fier are assembled on lead frame, the epoxy package is
designed as IR filter. The demodulated output signal can
directly be decoded by a microprocessor.
The main benefit is the operation with short burst trans-
mission codes (e.g. RECS 80) and high data rates.
GND
V
S
OUT
94 8692
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
Improved shielding against electrical field distur-
bance
D
D
D
D
TTL and CMOS compatibility
Output active low
Low power consumption
High immunity against ambient light
Special Features
D
Enhanced data rate of 2400 bit/s
D
Operation with short bursts possible
(≥6 cycles/burst)
Block Diagram
2
Input
Control
Circuit
100 k
W
3
PIN
AGC
Band
Pass
Demodu-
lator
1
GND
OUT
V
S
94 8136
TELEFUNKEN Semiconductors
Rev. A2, 14-May-97
1 (7)
TSOP11..TB1
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test Conditions
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°
C
°
C
°
C
mW
°
C
(T
amb
85
°
C)
t 5s
x
x
Basic Characteristics
T
amb
= 25
_
C
Parameter
Supply Current (
pp y
(Pin 2)
)
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance ( – 40 kHz)
(30
)
Irradiance ( kHz)
(56
)
Irradiance
Directivity
Test Conditions
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
E
v
= 0, test signal see fig.8,
IR diode TSIP5201, I
F
= 0.4 A
I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig.7
Test signal see fig.7
Test signal see fig.8
Test signal see fig.7
Test signal see fig.8
Test signal see fig.7
Angle of half transmission distance
Symbol
I
SD
I
SH
d
V
OSL
E
e min
E
e min
E
e min
E
e min
E
e max
ϕ
1/2
0.4
0.35
0.45
0.40
30
±45
Min
0.4
Typ
0.5
1
35
Max
0.8
Unit
mA
mA
m
mV
mW/m
2
mW/m
2
mW/m
2
mW/m
2
W/m
2
deg
250
0.6
0.5
0.7
0.6
Application Circuit
330
W
*)
2
TSOP11..
TSAL62..
3
4.7
m
F *)
>10 k
W
optional
+5 V **)
m
C
1
12755
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V<V
S
<5.5V
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 14-May-97
TSOP11..TB1
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
E
e min
– Threshold Irradiance ( mW/m
2
)
1.0
E
e min
/ E
e
– Rel. Responsitivity ( % )
0.8
2.0
f ( E ) = f
0
1.6
1.2
0.8
0.4
0.0
0.7
94 9102
0.6
0.4
0.2
0.0
0.8
0.9
1.0
1.1
1.2
1.3
f / f
0
– Relative Frequency
f = f
0
5%
D
f ( 3 dB ) = f
0
/ 7
"
0.0
94 8147
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV / m )
Figure 1. Frequency Dependence of Responsivity
0.30
t
po
– Output Pulse Length (ms)
0.25
0.20
Input burst duration
0.15
0.10
0.05
0
0.1
12751
Figure 4. Sensitivity vs. Electric Field Disturbances
10
f = f
0
1 kHz
E
e min
– Threshold Irradiance ( mW/m
2
)
10 kHz
1
l
= 950 nm,
optical test signal, fig.7
100 Hz
1.0
10.0
100.0 1000.0 10000.0
94 9106
0.1
0.01
0.1
1
10
100
1000
E
e
– Irradiance ( mW/m
2
)
D
V
s RMS –
AC Voltage on DC Supply Voltage ( mV )
Figure 2. Pulse Length and Sensitivity in Dark Ambient
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.01
0.10
1.00
10.00
100.00
Ambient,
l
= 950 nm
Correlation with ambient light sources
( Disturbance effect ) : 10W/m
2
1.4 klx
( Stand.illum.A, T = 2855 K ) 8.2 klx
( Daylight, T = 5900 K )
Figure 5. Sensitivity vs. Supply Voltage Disturbances
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–30 –15
0
15
30
45
60
75
90
Sensitivity in dark ambient
E
e min
– Threshold Irradiance (mW/m
2
)
^
^
E
e min
– Threshold Irradiance (mW/m
2
)
96 12111
E – DC Irradiance (W/m
2
)
96 12112
T
amb
– Ambient Temperature (
°C
)
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A2, 14-May-97
3 (7)
TSOP11..TB1
E
e
Optical Test Signal
( IR diode TSIP 5201, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms )
T
on
,T – Output Pulse Length (ms)
off
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
t
t
po2 )
12753
T
on
tpi
*
t
* t
pi
V
O
V
OH
V
OL
t
d1 )
w
6/fo is recommended for optimal function
12754
T
T
off
Output Signal
1)
2)
l
= 950 nm,
optical test signal, fig.8
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 7/f
0
1.0
10.0
100.0 1000.0 10000.0
E
e
– Irradiance (mW/m
2
)
Figure 7. Output Function
E
e
Optical Test Signal
1.0
0.9
I
s
– Supply Current ( mA )
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 10. Output Pulse Diagram
V
s
= 5 V
600
m
s
T = 60 ms
600
m
s
t
94 8134
V
O
V
OH
V
OL
Output Signal,
( see Fig.10 )
0
–30 –15
T
on
T
off
t
96 12115
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°C
)
Figure 8. Output Function
3.0
E
e min
– Threshold Irradiance (mW/m
2
)
2.5
2.0
N=10
1.5
N=16
1.0
N=32
0.5
0
0
12752
Figure 11. Supply Current vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8408
N=6 pulses
per burst
S (
l
)
rel
– Relative Spectral Sensitivity
0.1
0.2
0.3
0.4
0.5
0.6
0.7
850
950
1050
1150
t
p
/T – Duty Cycle
l
– Wavelength ( nm )
Figure 9. Sensitivity vs. Duty Cycle
Figure 12. Relative Spectral Sensitivity vs. Wavelength
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 14-May-97
TSOP11..TB1
0°
10°
20°
30°
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
95 11339p2
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
95 11340p2
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 13. Vertical Directivity
ϕ
y
Figure 14. Horizontal Directivity
ϕ
x
Board Hole Diagram
(Solder side, dimensions in mm, tolerances
18.2
9.65
2.6
R 1.0 ( 3
)
$
0.3 mm)
V
O
3.25
7.62
1.27
2.54
V
S
2.6 ( 3 )
GND
1.4
94 8135
10.4
3.05
2.4 ( 2 )
3.0
TELEFUNKEN Semiconductors
Rev. A2, 14-May-97
5 (7)
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