Datasheet> 器件分类 > 分立半导体> 晶体管> IRLZ14LPBF

IRLZ14LPBF: 产品描述Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN; 产品类别分立半导体晶体管; 文件大小292KB，共10页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

下载文档详细参数选型对比全文预览

IRLZ14LPBF概述

Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IRLZ14LPBF规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-262AA
包装说明	IN-LINE, R-PSIP-T3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	68 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	10 A
最大漏源导通电阻	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-262AA
JESD-30 代码	R-PSIP-T3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	40 A
认证状态	Not Qualified
表面贴装	NO
端子面层	MATTE TIN OVER NICKEL
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

PD - 9.903A

IRLZ14S/L

HEXFET

Power MOSFET

Advanced Process Technology

Surface Mount (IRLZ14S)

Low-profile through-hole (IRLZ14L)

175°C Operating Temperature

Fast Switching

DSS

= 60V

DS(on)

= 0.20Ω

= 10A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRLZ14L) is available for low-

profile applications.

D 2 Pak

T O -2 6 2

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

7.2

3.7

0.29

± 10

4.5

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.5

Units

°C/W

8/25/97

IRLZ14LPBF相似产品对比

	IRLZ14LPBF	IRLZ14SPBF	IRLZ14STRRPBF
描述	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
是否Rohs认证	符合	符合	符合
零件包装代码	TO-262AA	D2PAK	D2PAK
包装说明	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	4	4
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
外壳连接	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE
最小漏源击穿电压	60 V	60 V	60 V
最大漏极电流 (ID)	10 A	10 A	10 A
最大漏源导通电阻	0.2 Ω	0.2 Ω	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-262AA	TO-263AB	TO-263AB
JESD-30 代码	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1
端子数量	3	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	YES
端子形式	THROUGH-HOLE	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
厂商名称	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）
雪崩能效等级（Eas）	68 mJ	-	68 mJ
最大脉冲漏极电流 (IDM)	40 A	-	40 A
Base Number Matches	1	1	-
是否无铅	-	不含铅	不含铅
其他特性	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
功耗环境最大值	-	43 W	43 W

IRLZ14LPBF

IRLZ14LPBF概述

IRLZ14LPBF规格参数

文档预览

IRLZ14LPBF相似产品对比

推荐资源